公开(公告)号：US10036090B2

公开(公告)日：2018-07-31

申请号：US14386419

申请日：2013-03-28

申请人： TOKYO ELECTRON LIMITED

发明人： Eiichi Komori ,  Hironori Yagi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  C23C16/18 ,  F28B9/08 ,  H01L21/67 ,  B08B9/00

CPC分类号： C23C16/4412 ,  B08B9/00 ,  C23C16/18 ,  C23C16/4405 ,  F28B9/08 ,  H01L21/67017 ,  Y02C20/30 ,  Y02P70/605

摘要： A trap mechanism is provided in the middle of an exhaust passage through which an exhaust gas, which is exhausted from a film formation device body that forms a thin film on the surface of a workpiece (W), flows, and recovers a gas to be collected that is contained in the exhaust gas by cooling and liquefying the gas to be collected. The trap mechanism includes: a housing having a gas inlet and a gas outlet; a partitioning member that partitions the inside of the housing into retention spaces; communication paths that communicate the retention spaces with one another; and cooling jackets that cool the communication paths to cool the exhaust gas. With this structure, the exhaust gas is adiabatically expanded while being cooled, and the gas to be collected is efficiently cooled and liquefied.

公开(公告)号：US20170092471A1

公开(公告)日：2017-03-30

申请号：US15267246

申请日：2016-09-16

申请人： Tokyo Electron Limited

发明人： Hideki WAKAI

IPC分类号： H01J37/32

CPC分类号： H01J37/32724 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32697 ,  H01J2237/334 ,  H01L21/67109 ,  H01L21/67248 ,  Y02P70/605

摘要： A temperature adjustment device includes a pedestal to receive a substrate thereon, a first temperature control unit to set a first medium at a first temperature, and a second temperature control unit to set a second medium at a second temperature that is higher than the first temperature. A pedestal flow passage is provided inside the pedestal to allow the first medium and the second medium to flow therethrough by switching between the first medium and the second medium. A first flow passage through which the first medium flowing from the pedestal flow passage is allowed to flow is provided. A second flow passage through which the second medium flowing from the pedestal flow passage is allowed to flow is provided. A heat pump is connected to the first flow passage and the second flow passage to transfer heat between the first medium and the second medium.

公开(公告)号：US20160284546A1

公开(公告)日：2016-09-29

申请号：US14857302

申请日：2015-09-17

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Joowoan Cho ,  Byoungho Cheong ,  Byoungkwon Choo ,  Jeongkyun Na ,  Sanghoon Ahn ,  Hyunjin Cho

IPC分类号： H01L21/02 ,  H01L29/16 ,  H01L29/66 ,  H01L29/04

CPC分类号： H01L21/02675 ,  B23K26/00 ,  B23K26/0608 ,  B23K26/0643 ,  B23K26/352 ,  H01L21/02532 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/6675 ,  H01L29/66757 ,  Y02P70/605

摘要： A method of manufacturing a substrate includes: irradiating, along a first path, a laser beam emitted from a source onto a substrate, wherein the substrate includes a target layer of the laser beam, and wherein the substrate is disposed on a stage; and irradiating, along a second path, a portion the laser beam, which was emitted from the source and reached the target layer, by reflecting the laser beam back onto the target layer using a reflection mirror. An area of a second region of the target layer is greater than an area of a first region of the target layer, wherein the laser beam is irradiated along the second path in the second region, and the laser beam is irradiated along the first path in the first region.

摘要翻译： 一种制造衬底的方法包括：沿着第一路径照射从源发射到衬底上的激光束，其中衬底包括激光束的目标层，并且其中衬底设置在平台上; 并且通过使用反射镜将激光束反射回目标层，沿着第二路径照射从源发射并到达目标层的激光束的一部分。 目标层的第二区域的面积大于目标层的第一区域的面积，其中沿第二区域的第二路径照射激光束，沿着第一路径照射激光束 第一个地区。

公开(公告)号：US20150330631A1

公开(公告)日：2015-11-19

申请号：US14699102

申请日：2015-04-29

申请人： Tokyo Electron Limited

发明人： Norihiko AMIKURA ,  Norikazu SASAKI ,  Risako MIYOSHI

IPC分类号： F23N5/24 ,  G01N25/54

CPC分类号： F23N5/24 ,  F23M11/00 ,  F23M2900/11021 ,  G01N25/54 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605 ,  Y10T137/0346

摘要： Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.

摘要翻译： 公开了一种等离子体处理装置，其中主控制单元能够通过稀释控制器管理废气处理单元中的废气的处理情况。 废气处理单元包括通过排气管连接到真空泵出口的解毒装置，通过稀释气体供给管，MFC和开口连接到靠近真空泵出口的排气管的稀释气体源 安装在稀释气体供给管的中间的气体传感器，附着在稀释气体供给管的端部（节点N）的下游侧的排气管的气体传感器，以及配置为控制MFC的稀释控制器。

公开(公告)号：US20150260174A1

公开(公告)日：2015-09-17

申请号：US14656652

申请日：2015-03-12

申请人： EBARA CORPORATION

发明人： Hiroki FURUTA ,  Koichi IWASAKI ,  Keiichi ISHIKAWA ,  Tetsuo KOMAI ,  Shinichi SEKIGUCHI

IPC分类号： F04B23/04 ,  F04B49/02 ,  F04B49/24 ,  F04B15/04 ,  F04B17/03

CPC分类号： F04B23/04 ,  B01D53/005 ,  B01D53/323 ,  B01D53/8659 ,  B01D53/8662 ,  B01D2257/2025 ,  B01D2257/2027 ,  B01D2257/2045 ,  B01D2257/2047 ,  B01D2257/2064 ,  B01D2257/2066 ,  B01D2257/553 ,  B01D2258/0216 ,  C23C16/4412 ,  F04B15/04 ,  F04B17/03 ,  F04B49/02 ,  F04B49/24 ,  F04D17/168 ,  F04D19/04 ,  F05D2260/607 ,  Y02C20/30 ,  Y02P70/605

摘要： A vacuum pump with abatement function which can prevent contamination of a process chamber without allowing products generated by exhaust gas treatment to flow back to the process chamber, and can reduce the amount of gas to be treated without allowing a purge gas and a diluent gas to be contained in an exhaust gas, and thus can achieve energy saving by reducing the amount of energy required for the exhaust gas treatment in an abatement part is disclosed. The vacuum pump with abatement function includes a vacuum pump to which at least one abatement part for treating an exhaust gas is attached. The vacuum pump comprises a dry vacuum pump having a main pump capable of evacuating gas from an atmospheric pressure and a booster pump for increasing an evacuation speed of the main pump, and the at least one abatement part for treating the exhaust gas is connected between the main pump and the booster pump.

摘要翻译： 具有减轻功能的真空泵，其可以防止处理室的污染，而不允许废气处理产生的产物流回到处理室，并且可以减少待处理的气体的量，而不允许吹扫气体和稀释气体 被包含在废气中，因此可以通过减少减排部分中废气处理所需的能量来实现节能。 具有减排功能的真空泵包括：真空泵，至少一个用于处理废气的消除部分被附接到该真空泵。 该真空泵包括干式真空泵，其具有能够从大气压抽出气体的主泵和用于提高主泵的抽空速度的增压泵，并且用于处理废气的至少一个减排部分连接在 主泵和增压泵。

公开(公告)号：US20140277677A1

公开(公告)日：2014-09-18

申请号：US14285824

申请日：2014-05-23

申请人： TOKYO ELECTRON LIMITED

发明人： Takahiro ITO

IPC分类号： G05B19/402

CPC分类号： G05B19/402 ,  G05B19/41865 ,  G05B2219/32021 ,  G05B2219/45031 ,  G05B2219/49001 ,  Y02P70/161 ,  Y02P70/605 ,  Y02P80/114 ,  Y02P90/20 ,  Y02P90/205 ,  Y02P90/28

摘要： A production processing system includes a plurality of processing tools configured to process workpieces, an equipment which can be shared by the plurality of processing tools, a transfer device configured to transfer the workpieces to the plurality of processing tools, a host computer configured to create a transfer plan including information on timings for the workpieces to be carried in and carried out of the plurality of processing tools by the transfer device, a group controller configured to generate a use plan for the equipment based on acquired information, and a shared controller configured to control processing timings of the equipment and each of the plurality of processing tools based on the use plan, an operational state of the equipment, and use information including at least one of use reservation, inquiry, execution, and release information for the equipment by each of the plurality of processing tools.

摘要翻译： 生产处理系统包括多个处理工件，其被配置为处理工件，可由多个处理工具共享的设备，被配置为将工件传送到多个处理工具的传送装置;主计算机， 传送方案，包括关于由传送装置携带并执行多个处理工具的工件的定时的信息;被配置为基于获取的信息生成用于设备的使用计划的组控制器，以及共享控制器， 基于所述使用计划，所述设备的操作状态以及所述设备的使用信息以及所述设备的使用信息中的至少一个使用所述设备的使用预约，查询，执行和发布信息来控制所述设备和所述多个处理工具中的每一个的控制处理定时 的多个处理工具。

公开(公告)号：US08834817B2

公开(公告)日：2014-09-16

申请号：US12706734

申请日：2010-02-17

申请人： Masahisa Watanabe ,  Katsutoshi Ishii ,  Tetsuya Shibata

发明人： Masahisa Watanabe ,  Katsutoshi Ishii ,  Tetsuya Shibata

IPC分类号： C01F7/00 ,  C23C16/44

CPC分类号： C23C16/4405 ,  Y02C20/30 ,  Y02P70/605

摘要： A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

摘要翻译： 使用分批式热处理装置的方法包括进行从处理容器的石英内表面除去作为金属杂质存在的铝的准备工序，对保持在保持部件上的产品基板进行主热处理 过程容器经过准备过程。 该准备过程包括：放置多个虚设基板，用于允许金属杂质沉积在其中没有产品基板的处理容器内; 然后，将含氯气体和水蒸气供给到处理容器中，并在处理温度下加热处理容器的石英内表面，从而对石英内表面进行烘烤处理，以从石英内表面排出金属杂质 并将金属杂质沉积到虚设基板上; 然后从沉积在其上的金属杂质从反应容器卸载虚设基板。

公开(公告)号：US20140060571A1

公开(公告)日：2014-03-06

申请号：US13831613

申请日：2013-03-15

申请人： Glenn Mitchell ,  Ramkumar Subramanian ,  Carrie L. Wyse ,  Robert Torres, JR.

发明人： Glenn Mitchell ,  Ramkumar Subramanian ,  Carrie L. Wyse ,  Robert Torres, JR.

IPC分类号： B01J19/08 ,  B08B7/00 ,  B01J19/12

CPC分类号： B01J19/087 ,  B01J19/081 ,  B01J19/088 ,  B01J19/123 ,  B01J19/125 ,  B01J19/126 ,  B01J19/127 ,  B01J19/128 ,  B01J19/129 ,  B01J2219/0883 ,  B01J2219/0892 ,  C01B31/00 ,  C01B32/00 ,  C01B32/80 ,  C23C16/4405 ,  H01L21/31116 ,  Y02C20/30 ,  Y02P70/605

摘要： The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The additive(s) may be introduced upstream or downstream of the remote plasma such that both NF3 and the additive(s) (and any plasma-generated effluents) are present in the CVD chamber during cleaning.

摘要翻译： 根据本发明，提供分子蚀刻剂碳酰氟（COF 2）或其任何变体，以提高蚀刻和/或清洁和/或去除诸如不需要的膜和/或沉积物之类的材料的效率 处理室或基板（这里统称为“材料”）中的室壁和其它部件。 本发明的方法包括通过逐步添加添加剂，例如但不限于饱和的，不饱和的或部分不饱和的全氟化碳化合物（PFC）来点燃和维持等离子体，无论是远距离还是原位等离子体，其具有 通式（CyFz）和/或碳（COx）与三氟化氮（NF3）等离子体的氧化物进入化学沉积室（CVD）室，从而产生COF 2。 NF 3可以在CVD室内的等离子体中或在CVD室上游的远程等离子体区域中被激发。 添加剂可以被引入远程等离子体的上游或下游，使得NF 3和添加剂（和任何等离子体产生的流出物）在清洁期间都存在于CVD室中。

公开(公告)号：US08638416B2

公开(公告)日：2014-01-28

申请号：US12766373

申请日：2010-04-23

申请人： Tomohiko Yoshida

发明人： Tomohiko Yoshida

IPC分类号： G03B27/52 ,  G03B27/32

CPC分类号： G03B27/52 ,  G03F7/70725 ,  G03F7/70875 ,  G05D23/1931 ,  Y02P70/605

摘要： A device manufacturing apparatus includes a driving unit configured to perform driving for processing an object, a conduit through which a coolant that recovers heat generated by the driving unit flows, a cooler configure to cool the coolant that flows through the conduit, a heater configured to heat the coolant cooled by the cooler so that the driving unit cooled by the heated coolant has a target temperature, and a controller configured to heighten a target temperature of the coolant cooled by the cooler, if it is determined, based on control information to control the driving unit, that a heat amount to be generated by the driving unit decreases.

摘要翻译： 一种装置制造装置，包括：驱动单元，被配置为执行用于处理物体的驱动;导管，其中回收由所述驱动单元产生的热量的冷却剂流过;冷却器构造以冷却流过所述导管的冷却剂;加热器， 加热由冷却器冷却的冷却剂，使得被加热的冷却剂冷却的驱动单元具有目标温度，以及控制器，其被配置为提高由冷却器冷却的冷却剂的目标温度，如果确定的话，基于控制信息 所述驱动单元减少由所述驱动单元产生的热量。

公开(公告)号：US20130337655A1

公开(公告)日：2013-12-19

申请号：US14002087

申请日：2012-02-29

申请人： Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

发明人： Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

IPC分类号： H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/3065 ,  H01J37/32844 ,  H01L21/02071 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/68785 ,  Y02C20/30 ,  Y02P70/605

摘要： Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

摘要翻译： 本发明的实施例提供一种能够处理基板的双载荷锁定室。 在一个实施例中，双负载锁定室包括限定第一室容积的室主体和彼此隔离的第二室容积。 下部和第二腔室容积中的每一个通过构造成用于衬底转移的两个开口选择性地连接到两个处理环境。 双负载锁定室还包括设置在第二室容积中的加热的衬底支撑组件。 被加热的衬底支撑组件构造成在其上支撑和加热衬底。 双负载锁定室还包括连接到第二室容积的远程等离子体源，用于将等离子体供应到第二室容积。