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1.发明授权Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type 有权从分批式热处理装置中使用的石英部件除去金属杂质的方法公开(公告)号：US08834817B2
公开(公告)日：2014-09-16
申请号：US12706734
申请日：2010-02-17
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605
摘要： A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.
摘要翻译： 使用分批式热处理装置的方法包括进行从处理容器的石英内表面除去作为金属杂质存在的铝的准备工序，对保持在保持部件上的产品基板进行主热处理 过程容器经过准备过程。 该准备过程包括：放置多个虚设基板，用于允许金属杂质沉积在其中没有产品基板的处理容器内; 然后，将含氯气体和水蒸气供给到处理容器中，并在处理温度下加热处理容器的石英内表面，从而对石英内表面进行烘烤处理，以从石英内表面排出金属杂质 并将金属杂质沉积到虚设基板上; 然后从沉积在其上的金属杂质从反应容器卸载虚设基板。
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2.发明申请Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type 审中-公开从分批式热处理装置中使用的石英部件除去金属杂质的方法公开(公告)号：US20090041650A1
公开(公告)日：2009-02-12
申请号：US12222241
申请日：2008-08-05
IPC分类号： C01B33/12
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605
摘要： A method for removing a metal impurity from a quartz component part in a heat processing apparatus of a batch type includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product target substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.
摘要翻译： 一种批次式热处理装置中的石英成分部分中除去金属杂质的方法包括在其内没有放置产品目标衬底的处理容器内放置多个用于使金属杂质沉积在其上的虚拟衬底; 然后，将含氯气体和水蒸气供给到处理容器中，并在处理温度下加热处理容器的石英内表面，从而对石英内表面进行烘烤处理，以从石英内表面排出金属杂质 并将金属杂质沉积到虚设基板上; 然后从沉积在其上的金属杂质从反应容器卸载虚设基板。
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3.发明申请Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type 有权从分批式热处理装置中使用的石英部件除去金属杂质的方法公开(公告)号：US20100135877A1
公开(公告)日：2010-06-03
申请号：US12706734
申请日：2010-02-17
IPC分类号： C01F7/00
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605
摘要： A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.
摘要翻译： 使用分批式热处理装置的方法包括进行从处理容器的石英内表面除去作为金属杂质存在的铝的准备工序，对保持在保持部件上的产品基板进行主热处理 过程容器经过准备过程。 该准备过程包括：放置多个虚设基板，用于使金属杂质沉积在其中没有产品基板的处理容器内; 然后，将含氯气体和水蒸气供给到处理容器中，并在处理温度下加热处理容器的石英内表面，从而对石英内表面进行烘烤处理，以从石英内表面排出金属杂质 并将金属杂质沉积到虚设基板上; 然后从沉积在其上的金属杂质从反应容器卸载虚设基板。
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公开(公告)号：US07211295B2
公开(公告)日：2007-05-01
申请号：US10830317
申请日：2004-04-23
IPC分类号： C23C16/40
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02271 , H01L21/3144 , H01L21/31662 , H01L21/3185
摘要： Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.
摘要翻译： 本文公开了一种二氧化硅膜形成方法，包括：将反应室加热至预定温度的反应室加热步骤，所述反应室包含待处理物体; 气体预处理步骤，其使处理气体通电以产生水，所述处理气体包括氢气，氯气和氧气; 以及成膜步骤，通过将被通电的处理气体供给到加热的反应室中来形成二氧化硅膜，以氧化待处理物体的硅层。
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公开(公告)号：US06903030B2
公开(公告)日：2005-06-07
申请号：US10477110
申请日：2002-03-13
IPC分类号： H01L21/31 , C23C16/44 , C30B33/02 , H01L21/00 , H01L21/469
CPC分类号： H01L21/67103 , C23C8/16 , C30B33/02 , H01L21/67109 , H01L21/67248 , H01L21/67253 , Y10S438/909
摘要： A supply system in a heat-treating apparatus for a semiconductor process has a combustor (12), heating unit (13), and gas distributor (14). The combustor (12) has a combustion chamber (59) disposed outside a process chamber (21). The combustor (12) generates water vapor by reaction of hydrogen gas and oxygen gas in the combustion chamber (59), and supplies it to the process chamber (21). The heating unit (13) has a heating chamber (61) disposed outside the process chamber (21). The heating unit (13) selectively heats a gas not passing through the combustion chamber (59) to a temperature not lower than an activating temperature of the gas, and supplies it to the process chamber (21). The gas distributor (14) selectively supplies the hydrogen gas and oxygen gas to the combustion chamber (59), and selectively supplies a reactive gas and inactive gas to the heating chamber (61).
摘要翻译： 用于半导体工艺的热处理装置中的供应系统具有燃烧器（12），加热单元（13）和气体分配器（14）。 燃烧器（12）具有设置在处理室（21）外部的燃烧室（59）。 燃烧器（12）通过在燃烧室（59）中的氢气和氧气的反应产生水蒸气，并将其供给到处理室（21）。 加热单元（13）具有设置在处理室（21）外部的加热室（61）。 加热单元（13）将不通过燃烧室（59）的气体选择性地加热至不低于气体的活化温度的温度，并将其供给到处理室（21）。 气体分配器（14）选择性地将氢气和氧气供应到燃烧室（59），并且选择性地向加热室（61）供应反应气体和惰性气体。
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公开(公告)号：USD425871S
公开(公告)日：2000-05-30
申请号：US74284
申请日：1997-07-24
申请人： Katsutoshi Ishii
设计人： Katsutoshi Ishii
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公开(公告)号：US5221201A
公开(公告)日：1993-06-22
申请号：US734784
申请日：1991-07-23
申请人： Kenichi Yamaga , Katsutoshi Ishii , Naotaka Ogino
发明人： Kenichi Yamaga , Katsutoshi Ishii , Naotaka Ogino
CPC分类号： F27B17/0025 , C30B31/103 , Y10S414/137 , Y10S414/14
摘要： A vertical heat treatment apparatus includes a casing, a vertical heat treatment furnace provided in the casing, a substrate holding unit mounted in the casing for holding substrates to be heat-treated in the vertical heat treatment furnace, a loading/unloading unit having a wafer boat for supporting the substrates, the loading/unloading unit being adapted to put the substrates in and take the same out of the vertical heat treatment furnace, and a transportation robot for moving the substrates between the substrate holding unit and the wafer boat. The vertical heat treatment apparatus further includes a clean air supplying unit for supplying clean air sideways to the wafers supported by the wafer boat when the loading/unloading unit is at an unloading position, a and duct for introducing air from the outside of the apparatus. The clean air supplying unit is provided with an air filter disposed opposed to the wafer boat. Air in a clean room whose pressure is set to be higher than the pressure in the casing is introduced into the clean air supplying unit through the duct.
摘要翻译： 立式热处理装置包括壳体，设置在壳体中的立式热处理炉，安装在壳体中用于保持在立式热处理炉中进行热处理的基板的基板保持单元，具有晶片的装载/卸载单元 用于支撑基板的装载/卸载单元适于将基板放入立式热处理炉中并将其取出，以及用于在基板保持单元和晶片舟皿之间移动基板的输送机器人。 垂直热处理装置还包括清洁空气供给单元，用于当装载/卸载单元处于卸载位置时，向由晶圆舟支撑的晶片横向地供应清洁空气，以及用于从设备的外部引入空气的管道。 清洁空气供给单元设置有与晶片舟相对设置的空气过滤器。 将其压力设定得高于壳体内的压力的洁净室内的空气通过导管引入清洁空气供给单元。
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公开(公告)号：US20090078201A1
公开(公告)日：2009-03-26
申请号：US12277344
申请日：2008-11-25
IPC分类号： C23C16/505
CPC分类号： C23C16/45578 , C23C16/452 , C23C16/45565 , C23C16/45574
摘要： A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括由具有绝缘内表面并与处理容器一体化的壳体限定的气密辅助室。 辅助室包括在垂直方向上在对应于多个目标基板的长度上延伸的等离子体产生区域。 具有绝缘表面的隔板位于处理场和等离子体产生之间。 隔板包括沿垂直方向设置在与多个目标基板相对应的长度上的气体通道。 在通过等离子体产生区域时排出处理气体，然后通过气体通道供给到处理区域。
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公开(公告)号：USD520467S1
公开(公告)日：2006-05-09
申请号：US29204407
申请日：2004-04-29
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公开(公告)号：USD426521S
公开(公告)日：2000-06-13
申请号：US74277
申请日：1997-07-24
申请人： Katsutoshi Ishii
设计人： Katsutoshi Ishii
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