公开(公告)号：US20240344769A1

公开(公告)日：2024-10-17

申请号：US18755731

申请日：2024-06-27

Applicant: LAPLACE Renewable Energy Technology Co., Ltd.

Inventor： Qinghua Chang ,  Tairong Zhu ,  Wu Zhang ,  Qun Liu

IPC: F27B17/00 ,  F27D9/00

CPC classification number: F27B17/0025 ,  F27D9/00 ,  F27D2009/0005

Abstract: A furnace and a semiconductor processing equipment are provided. The furnace includes a furnace body and a heat exchange device, the furnace body includes a furnace tube and an insulation layer disposed around the furnace tube, a heat exchange gas channel is formed between an outer wall of the furnace tube and the insulation layer, the heat exchange gas channel includes a first gas inlet and a first gas outlet. The heat exchange device includes a gas flow channel and a cooling channel, the gas flow channel is connected to the first gas outlet, the cooling channel provides a cooling medium for exchanging heat with a gas in the gas flow channel.

公开(公告)号：US12046489B2

公开(公告)日：2024-07-23

申请号：US17550154

申请日：2021-12-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Rolf Bremensdorfer ,  Dieter Hezler

IPC: H01L21/67 ,  F27B17/00 ,  F27D7/02 ,  G01J5/10 ,  G01J5/58 ,  H05B1/02 ,  H05B3/00 ,  G01J5/00

CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D7/02 ,  G01J5/10 ,  G01J5/58 ,  H01L21/67248 ,  H05B1/0233 ,  H05B3/0047 ,  G01J5/0007

Abstract: A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.

公开(公告)号：US20240234183A1

公开(公告)日：2024-07-11

申请号：US18612702

申请日：2024-03-21

Applicant: Kokusai Electric Corporation

Inventor： Teruo YOSHINO ,  Naofumi Ohashi ,  Tadashi Takasaki

IPC: H01L21/67 ,  F27B17/00 ,  F27D3/00 ,  F27D9/00

CPC classification number: H01L21/67196 ,  F27B17/0025 ,  F27D3/0084 ,  H01L21/67103 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67242 ,  F27D2009/0013

Abstract: Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

公开(公告)号：US11967513B2

公开(公告)日：2024-04-23

申请号：US17205580

申请日：2021-03-18

Applicant: Kokusai Electric Corporation

Inventor： Teruo Yoshino ,  Naofumi Ohashi ,  Tadashi Takasaki

IPC: H01L21/67 ,  F27B17/00 ,  F27D3/00 ,  F27D9/00

CPC classification number: H01L21/67196 ,  F27B17/0025 ,  F27D3/0084 ,  H01L21/67103 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67242 ,  F27D2009/0013

Abstract: Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

公开(公告)号：US20240105474A1

公开(公告)日：2024-03-28

申请号：US18454103

申请日：2023-08-23

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takahiro KITAZAWA ,  Yoshio ITO

IPC: H01L21/67 ,  F27B17/00 ,  H05B1/02 ,  H05B3/00

CPC classification number: H01L21/67115 ,  F27B17/0025 ,  H05B1/0233 ,  H05B3/0047

Abstract: In an auxiliary heating part for performing a preheating treatment on a semiconductor wafer, VCSELs are arranged so as to surround LED lamps arranged in a circular region. The LED lamps irradiate the entire surface of the semiconductor wafer with light, and the VCSELs which emit light of relatively high directivity irradiate a peripheral portion of the semiconductor wafer where a temperature decrease is prone to occur with the light. A common power supply circuit is provided for the LED lamps and VCSELs that irradiate the peripheral portion of the semiconductor wafer with light. Increases in size and costs of power supply circuitry are suppressed because the single power supply circuit supplies power to the two different types of light sources to collectively control the two different types of light sources.

公开(公告)号：US11929272B2

公开(公告)日：2024-03-12

申请号：US16944299

申请日：2020-07-31

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Kenichi Suzaki

IPC: H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  H01L21/324 ,  H01L21/673

CPC classification number: H01L21/67309 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67306

Abstract: There is provided a technique that includes a substrate support including a support column made of metal and a plurality of supports installed at the support column and configured to support a plurality of substrates in multiple stages; a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and a heater configured to heat the plurality of substrates accommodated in the process chamber, wherein the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material.

公开(公告)号：US11915960B2

公开(公告)日：2024-02-27

申请号：US16935288

申请日：2020-07-22

Applicant: ASM IP Holding B.V.

Inventor： Jeroen Fluit

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/673 ,  B65G1/04 ,  F27B17/00 ,  F27D3/12 ,  F27D3/00 ,  F27D15/02

CPC classification number: H01L21/67757 ,  B65G1/045 ,  F27B17/0025 ,  F27D3/0084 ,  F27D3/12 ,  F27D15/02 ,  H01L21/67109 ,  H01L21/67303 ,  B65G2201/0297 ,  F27D2003/0051 ,  F27D2003/0087

Abstract: A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and an internal wall separating the cassette handling space and the wafer handling space. The cassette handling space is provided with a cassette storage configured to store a plurality of wafer cassettes. The cassette handling space is also provided with a cassette handler configured to transfer wafer cassettes between the cassette storage and a wafer transfer position. The wafer handling space is provided with a wafer handler configured to transfer wafers between a wafer cassette in the wafer transfer position and a wafer boat. The internal wall is provided with a wafer transfer opening adjacent the wafer transfer position for a wafer cassette from or to which wafers are to be transferred. The cassette storage comprises a cassette storage carousel with a diameter between 1.1 and 1.6 meter.

公开(公告)号：US20240030049A1

公开(公告)日：2024-01-25

申请号：US18375958

申请日：2023-10-02

Applicant: Tokyo Electron Limited

Inventor： Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Koji USHIMARU ,  Ryohei FUJISE

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  G03F7/16 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00

CPC classification number: H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  F27B17/0025 ,  G03F7/168 ,  F27D3/0084 ,  H05B3/22 ,  H05B1/0233 ,  F27D5/0037 ,  F27B17/0083

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

公开(公告)号：US20230369077A1

公开(公告)日：2023-11-16

申请号：US18223923

申请日：2023-07-19

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Danny LAU ,  Toshiyuki NAKAGAWA ,  Zhiyuan YE

IPC: H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  B23K26/00 ,  B23K26/08 ,  H01L21/687 ,  H01L21/268 ,  B23K26/06

CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D5/0037 ,  B23K26/0006 ,  B23K26/0869 ,  H01L21/68764 ,  H01L21/268 ,  B23K26/0648 ,  B23K2103/56

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

公开(公告)号：US20230223283A1

公开(公告)日：2023-07-13

申请号：US18147227

申请日：2022-12-28

Applicant: ALIBABA GROUP HOLDING LIMITED

Inventor： Chengchun TANG

IPC: H01L21/67 ,  G05D23/27 ,  H05B1/02 ,  H05B3/74 ,  F27B17/00 ,  F27D7/06

CPC classification number: H01L21/67115 ,  G05D23/27 ,  H05B1/0233 ,  H05B3/744 ,  F27B17/0025 ,  F27D7/06 ,  H01L21/67248 ,  H05B2213/07 ,  F27D2007/066

Abstract: The present disclosure discloses a heating apparatus for a semiconductor device. The heating apparatus includes a carrier including a first abutting part, a heat collecting plate at least including a working surface, and a heat radiation source disposed on a side of the heat collecting plate opposite to the working surface and separated from the heat collecting plate by a predetermined distance. The heat collecting plate is disposed on the carrier, and the first abutting part abuts against an edge of the heat collecting plate on the side opposite to the working surface. The heat radiation source is and configured to emit heat radiation during working and to heat the heat collecting plate in a non-contact manner. The heat collecting plate receives the heat radiation and the emitted heat and heats a heated object disposed on the working surface in a contact manner.