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公开(公告)号：US11538661B1
公开(公告)日：2022-12-27
申请号：US17692722
申请日：2022-03-11
发明人： Teruo Yoshino , Naofumi Ohashi , Tadashi Takasaki
IPC分类号： H01J37/32
摘要： There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.
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公开(公告)号：US11495435B2
公开(公告)日：2022-11-08
申请号：US16874312
申请日：2020-05-14
发明人： Teruo Yoshino , Takashi Yahata
IPC分类号： H01J37/32
摘要： Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.
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公开(公告)号：US20220230897A1
公开(公告)日：2022-07-21
申请号：US17205580
申请日：2021-03-18
发明人： Teruo Yoshino , Naofumi Ohashi , Tadashi Takasaki
摘要： Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.
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公开(公告)号：US11923173B2
公开(公告)日：2024-03-05
申请号：US17994763
申请日：2022-11-28
发明人： Teruo Yoshino , Naofumi Ohashi , Tadashi Takasaki
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32128 , H01J37/32183
摘要： There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.
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公开(公告)号：US11841343B2
公开(公告)日：2023-12-12
申请号：US17682436
申请日：2022-02-28
发明人： Teruo Yoshino , Naofumi Ohashi , Toshiro Koshimaki
IPC分类号： H04R1/08 , C23C16/458 , H01L21/677 , G01N29/14 , G01M99/00 , H01L21/67
CPC分类号： G01N29/14 , C23C16/4583 , G01M99/005 , H01L21/67739 , H04R1/08 , H01L21/67259 , H01L21/67793
摘要： There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.
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公开(公告)号：US12106998B2
公开(公告)日：2024-10-01
申请号：US17887921
申请日：2022-08-15
发明人： Naofumi Ohashi , Teruo Yoshino , Masanori Nakayama
IPC分类号： H01L21/687
CPC分类号： H01L21/68742 , H01L21/68764 , H01L21/68785
摘要： There is provided a technique capable of preventing a diffusion of a film-forming gas through a through-hole. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table; through-holes at the substrate mounting table; lift pins; an elevator capable of elevating or lowering the substrate mounting table or the lift pins or both; and a controller capable of controlling the elevator so as to perform: (a) placing a substrate on the lift pins protruding from a surface of the substrate mounting table through the through-holes; (b) placing the substrate on the surface of the substrate mounting table by moving the substrate mounting table or the lift pins or both; (c) stopping the substrate mounting table at a substrate processing position; and (d) moving the lift pins to positions in the through-holes at which the lift pins are out of contact with the substrate.
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公开(公告)号：US11967513B2
公开(公告)日：2024-04-23
申请号：US17205580
申请日：2021-03-18
发明人： Teruo Yoshino , Naofumi Ohashi , Tadashi Takasaki
CPC分类号： H01L21/67196 , F27B17/0025 , F27D3/0084 , H01L21/67103 , H01L21/67167 , H01L21/67201 , H01L21/67242 , F27D2009/0013
摘要： Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.
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公开(公告)号：US11905596B2
公开(公告)日：2024-02-20
申请号：US17484586
申请日：2021-09-24
发明人： Teruo Yoshino , Takeshi Yasui , Masaki Murobayashi , Koichiro Harada , Tadashi Terasaki , Masanori Nakayama
IPC分类号： H01J37/32 , C23C16/505 , H05H1/46 , C23C16/44 , C23C16/52 , C23C16/458 , H01L21/02
CPC分类号： C23C16/505 , C23C16/44 , C23C16/4583 , C23C16/52 , H01J37/321 , H01J37/3244 , H01J37/32174 , H01J37/32568 , H01L21/02238 , H01L21/02252 , H01L21/02274 , H05H1/46
摘要： A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.
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公开(公告)号：US11155922B2
公开(公告)日：2021-10-26
申请号：US16136943
申请日：2018-09-20
发明人： Teruo Yoshino , Takeshi Yasui , Masaki Murobayashi , Koichiro Harada , Tadashi Terasaki , Masanori Nakayama
IPC分类号： H01L21/02 , C23C16/52 , C23C16/505 , H05H1/46 , H01J37/32 , C23C16/458 , C23C16/44
摘要： A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.
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公开(公告)号：US11145491B2
公开(公告)日：2021-10-12
申请号：US16776693
申请日：2020-01-30
IPC分类号： H01J37/32 , H01L21/687 , H05H1/46 , H01J37/16
摘要： Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.
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