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公开(公告)号：US10796900B2
公开(公告)日：2020-10-06
申请号：US16528048
申请日：2019-07-31
IPC分类号： H01L21/00 , H01L21/02 , C23C16/40 , C23C16/50 , H01L27/11582
摘要： Described herein is a technique capable of improving electrical characteristics of a semiconductor device. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) generating oxygen and hydrogen active species; and (b) forming an oxide layer by supplying the oxygen and hydrogen active species to a substrate with a concave structure to subject a film on an inner surface of the concave structure to oxidation, wherein the oxide layer is formed in (b) such that a thickness of the oxide layer is greater on the inner surface than at an upper end portion of the concave structure by setting a ratio of a flow rate of the hydrogen active species to a total flow rate to a predetermined ratio greater than a first ratio at which a rate of forming the oxide layer is maximized at the upper end portion of the concave structure.
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2.发明公开公开(公告)号：US20230307295A1
公开(公告)日：2023-09-28
申请号：US18306798
申请日：2023-04-25
发明人： Masanori NAKAYAMA , Katsunori Funaki , Tatsushi Ueda , Yasutoshi Tsubota , Yuichiro Takeshima , Hiroto Igawa , Yuki Yamakado
IPC分类号： H01L21/768 , H01L21/321 , H01L21/67
CPC分类号： H01L21/76886 , H01L21/321 , H01L21/67115 , H01L21/76862
摘要： There is provided a technique that includes: preparing the substrate including a silicon-containing film and a metal film composed of a metal element, which includes at least one selected from the group of tungsten, titanium, ruthenium, and molybdenum and, which are formed on a surface of the substrate; and simultaneously performing modifying the metal film and modifying the silicon-containing film by supplying reactive species, which are generated by plasma-exciting a processing gas containing hydrogen and oxygen, to the substrate.
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公开(公告)号：US11081362B2
公开(公告)日：2021-08-03
申请号：US16570452
申请日：2019-09-13
发明人： Yuki Yamakado , Masanori Nakayama , Katsunori Funaki , Tatsushi Ueda , Yasutoshi Tsubota , Eiko Takami , Yuichiro Takeshima , Hiroto Igawa
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32
摘要： There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.
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公开(公告)号：US11908682B2
公开(公告)日：2024-02-20
申请号：US17185399
申请日：2021-02-25
发明人： Hiroto Igawa , Masanori Nakayama , Katsunori Funaki , Tatsushi Ueda , Yasutoshi Tsubota , Eiko Takami , Yuichiro Takeshima , Yuki Yamakado
CPC分类号： H01L21/02164 , C23C8/12 , C23C8/36 , H01J37/32449 , H01J37/32724 , H01L21/02252 , H01L21/02255 , H01J2237/332
摘要： According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.
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公开(公告)号：US11145491B2
公开(公告)日：2021-10-12
申请号：US16776693
申请日：2020-01-30
IPC分类号： H01J37/32 , H01L21/687 , H05H1/46 , H01J37/16
摘要： Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.
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6.发明授权公开(公告)号：US12040161B2
公开(公告)日：2024-07-16
申请号：US17477296
申请日：2021-09-16
发明人： Yasutoshi Tsubota , Masanori Nakayama , Katsunori Funaki , Tatsushi Ueda , Eiko Takami , Yuichiro Takeshima , Hiroto Igawa , Yuki Yamakado , Keita Ichimura
CPC分类号： H01J37/3244 , H01L21/02252 , H01L21/02323 , H01L21/3003
摘要： A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.
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7.发明授权公开(公告)号：US11664275B2
公开(公告)日：2023-05-30
申请号：US16817508
申请日：2020-03-12
发明人： Masanori Nakayama , Katsunori Funaki , Tatsushi Ueda , Yasutoshi Tsubota , Yuichiro Takeshima , Hiroto Igawa , Yuki Yamakado
IPC分类号： H01L21/321 , H01L21/768 , H01L21/67
CPC分类号： H01L21/76886 , H01L21/321 , H01L21/67115 , H01L21/76862
摘要： There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.
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8.发明授权公开(公告)号：US11189483B2
公开(公告)日：2021-11-30
申请号：US16522295
申请日：2019-07-25
IPC分类号： H05H1/46 , H01L21/67 , H01L21/324 , H01L21/3213 , H01L21/321 , H01L21/311 , H01L21/3065 , H01L21/02 , H01J37/32
摘要： According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) providing a semiconductor processing apparatus including a substrate process chamber, a coil and a substrate support; (b) placing a target substrate with a concave structure of a silicon film on a substrate support, wherein a deteriorated layer is formed on an inner surface of the concave structure by deterioration of a surface layer of the silicon film due to an etching process; (c) supplying an oxygen-containing gas into the substrate process chamber; (d) applying a high frequency power to the coil to generate plasma of the oxygen-containing gas; and (e) oxidizing, by the plasma, a surface of the silicon film exposed in the concave structure wherein the deteriorated layer is formed on the surface.
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公开(公告)号：US20240243019A1
公开(公告)日：2024-07-18
申请号：US18403818
申请日：2024-01-04
发明人： Yuichiro TAKESHIMA , Masanori Nakayama , Yasutoshi Tsubota , Hiroto Igawa , Yuki Yamakado , Hiroki Kishimoto
CPC分类号： H01L22/26 , H01J37/32935 , H01J37/3299 , H01J2237/24585 , H01J2237/24592
摘要： To suppress fluctuations in substrate processing results over time due to operations of a substrate processing apparatus, there is provided a technique that includes: a transfer chamber where a substrate is transferred; a process chamber in which the substrate is processed under process conditions of the substrate; a measurer for measuring a mass of the substrate before the processing of the substrate starts and after the processing of the substrate ends; a calculator for calculating a film thickness value of the substrate from a difference in the mass measured by the measurer before the processing starts and after the processing ends; a determinator for determining whether the film thickness value calculated by the calculator is abnormal; a setter for setting the process conditions; and a controller for controlling the setter to change the process conditions when the determinator determines that the film thickness value is abnormal.
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10.发明授权公开(公告)号：US11152476B2
公开(公告)日：2021-10-19
申请号：US16125279
申请日：2018-09-07
IPC分类号： H01L21/00 , H01L29/423 , H01L21/28 , H01L21/321 , H01L29/66 , H01L27/115 , H01L29/792 , H01L21/02
摘要： Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide film. According to the technique described herein, there is provided a there is provided a method of manufacturing a semiconductor device, including: (a) preparing a substrate including a silicon oxide film and a polysilicon film formed on the silicon oxide film, wherein the polysilicon film includes a contact surface contacting the silicon oxide film and an exposed surface facing the contact surface; and (b) supplying a reactive species generated by plasma excitation of a gas containing hydrogen and oxygen to the exposed surface of the polysilicon film.
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