- 专利标题： Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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申请号： US17477296申请日： 2021-09-16
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公开(公告)号： US12040161B2公开(公告)日： 2024-07-16
- 发明人: Yasutoshi Tsubota , Masanori Nakayama , Katsunori Funaki , Tatsushi Ueda , Eiko Takami , Yuichiro Takeshima , Hiroto Igawa , Yuki Yamakado , Keita Ichimura
- 申请人： KOKUSAI ELECTRIC CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： Kokusai Electric Corporation
- 当前专利权人： Kokusai Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe Koenig
- 主分类号： H05H1/24
- IPC分类号： H05H1/24 ; H01J37/32 ; H01L21/02 ; H01L21/30
摘要：
A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.
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