公开(公告)号：US12040161B2

公开(公告)日：2024-07-16

申请号：US17477296

申请日：2021-09-16

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yasutoshi Tsubota ,  Masanori Nakayama ,  Katsunori Funaki ,  Tatsushi Ueda ,  Eiko Takami ,  Yuichiro Takeshima ,  Hiroto Igawa ,  Yuki Yamakado ,  Keita Ichimura

IPC: H05H1/24 ,  H01J37/32 ,  H01L21/02 ,  H01L21/30

CPC classification number: H01J37/3244 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/3003

Abstract: A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

公开(公告)号：US11081362B2

公开(公告)日：2021-08-03

申请号：US16570452

申请日：2019-09-13

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yuki Yamakado ,  Masanori Nakayama ,  Katsunori Funaki ,  Tatsushi Ueda ,  Yasutoshi Tsubota ,  Eiko Takami ,  Yuichiro Takeshima ,  Hiroto Igawa

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

公开(公告)号：US11908682B2

公开(公告)日：2024-02-20

申请号：US17185399

申请日：2021-02-25

Applicant: Kokusai Electric Corporation

Inventor： Hiroto Igawa ,  Masanori Nakayama ,  Katsunori Funaki ,  Tatsushi Ueda ,  Yasutoshi Tsubota ,  Eiko Takami ,  Yuichiro Takeshima ,  Yuki Yamakado

IPC: H01L21/02 ,  H01J37/32 ,  C23C8/12 ,  C23C8/36

CPC classification number: H01L21/02164 ,  C23C8/12 ,  C23C8/36 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/02252 ,  H01L21/02255 ,  H01J2237/332

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.