公开(公告)号：US11081362B2

公开(公告)日：2021-08-03

申请号：US16570452

申请日：2019-09-13

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yuki Yamakado ,  Masanori Nakayama ,  Katsunori Funaki ,  Tatsushi Ueda ,  Yasutoshi Tsubota ,  Eiko Takami ,  Yuichiro Takeshima ,  Hiroto Igawa

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

公开(公告)号：US11908682B2

公开(公告)日：2024-02-20

申请号：US17185399

申请日：2021-02-25

Applicant: Kokusai Electric Corporation

Inventor： Hiroto Igawa ,  Masanori Nakayama ,  Katsunori Funaki ,  Tatsushi Ueda ,  Yasutoshi Tsubota ,  Eiko Takami ,  Yuichiro Takeshima ,  Yuki Yamakado

IPC: H01L21/02 ,  H01J37/32 ,  C23C8/12 ,  C23C8/36

CPC classification number: H01L21/02164 ,  C23C8/12 ,  C23C8/36 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/02252 ,  H01L21/02255 ,  H01J2237/332

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

公开(公告)号：US11905596B2

公开(公告)日：2024-02-20

申请号：US17484586

申请日：2021-09-24

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Teruo Yoshino ,  Takeshi Yasui ,  Masaki Murobayashi ,  Koichiro Harada ,  Tadashi Terasaki ,  Masanori Nakayama

IPC: H01J37/32 ,  C23C16/505 ,  H05H1/46 ,  C23C16/44 ,  C23C16/52 ,  C23C16/458 ,  H01L21/02

CPC classification number: C23C16/505 ,  C23C16/44 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02274 ,  H05H1/46

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

公开(公告)号：US11155922B2

公开(公告)日：2021-10-26

申请号：US16136943

申请日：2018-09-20

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Teruo Yoshino ,  Takeshi Yasui ,  Masaki Murobayashi ,  Koichiro Harada ,  Tadashi Terasaki ,  Masanori Nakayama

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  H05H1/46 ,  H01J37/32 ,  C23C16/458 ,  C23C16/44

Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.

公开(公告)号：US11145491B2

公开(公告)日：2021-10-12

申请号：US16776693

申请日：2020-01-30

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Masaki Murobayashi ,  Koichiro Harada ,  Hiroto Igawa ,  Teruo Yoshino ,  Masanori Nakayama

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46 ,  H01J37/16

Abstract: Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

公开(公告)号：US12040161B2

公开(公告)日：2024-07-16

申请号：US17477296

申请日：2021-09-16

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yasutoshi Tsubota ,  Masanori Nakayama ,  Katsunori Funaki ,  Tatsushi Ueda ,  Eiko Takami ,  Yuichiro Takeshima ,  Hiroto Igawa ,  Yuki Yamakado ,  Keita Ichimura

IPC: H05H1/24 ,  H01J37/32 ,  H01L21/02 ,  H01L21/30

CPC classification number: H01J37/3244 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/3003

Abstract: A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

公开(公告)号：US11664275B2

公开(公告)日：2023-05-30

申请号：US16817508

申请日：2020-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Masanori Nakayama ,  Katsunori Funaki ,  Tatsushi Ueda ,  Yasutoshi Tsubota ,  Yuichiro Takeshima ,  Hiroto Igawa ,  Yuki Yamakado

IPC: H01L21/321 ,  H01L21/768 ,  H01L21/67

CPC classification number: H01L21/76886 ,  H01L21/321 ,  H01L21/67115 ,  H01L21/76862

Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.

公开(公告)号：US11189483B2

公开(公告)日：2021-11-30

申请号：US16522295

申请日：2019-07-25

Applicant: Kokusai Electric Corporation

Inventor： Yuichiro Takeshima ,  Masanori Nakayama ,  Katsunori Funaki ,  Yasutoshi Tsubota ,  Hiroto Igawa

IPC: H05H1/46 ,  H01L21/67 ,  H01L21/324 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) providing a semiconductor processing apparatus including a substrate process chamber, a coil and a substrate support; (b) placing a target substrate with a concave structure of a silicon film on a substrate support, wherein a deteriorated layer is formed on an inner surface of the concave structure by deterioration of a surface layer of the silicon film due to an etching process; (c) supplying an oxygen-containing gas into the substrate process chamber; (d) applying a high frequency power to the coil to generate plasma of the oxygen-containing gas; and (e) oxidizing, by the plasma, a surface of the silicon film exposed in the concave structure wherein the deteriorated layer is formed on the surface.

公开(公告)号：US12106998B2

公开(公告)日：2024-10-01

申请号：US17887921

申请日：2022-08-15

Applicant: Kokusai Electric Corporation

Inventor： Naofumi Ohashi ,  Teruo Yoshino ,  Masanori Nakayama

IPC: H01L21/687

CPC classification number: H01L21/68742 ,  H01L21/68764 ,  H01L21/68785

Abstract: There is provided a technique capable of preventing a diffusion of a film-forming gas through a through-hole. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table; through-holes at the substrate mounting table; lift pins; an elevator capable of elevating or lowering the substrate mounting table or the lift pins or both; and a controller capable of controlling the elevator so as to perform: (a) placing a substrate on the lift pins protruding from a surface of the substrate mounting table through the through-holes; (b) placing the substrate on the surface of the substrate mounting table by moving the substrate mounting table or the lift pins or both; (c) stopping the substrate mounting table at a substrate processing position; and (d) moving the lift pins to positions in the through-holes at which the lift pins are out of contact with the substrate.

公开(公告)号：US20240243019A1

公开(公告)日：2024-07-18

申请号：US18403818

申请日：2024-01-04

Applicant: Kokusai Electric Corporation

Inventor： Yuichiro TAKESHIMA ,  Masanori Nakayama ,  Yasutoshi Tsubota ,  Hiroto Igawa ,  Yuki Yamakado ,  Hiroki Kishimoto

IPC: H01L21/66 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/24585 ,  H01J2237/24592

Abstract: To suppress fluctuations in substrate processing results over time due to operations of a substrate processing apparatus, there is provided a technique that includes: a transfer chamber where a substrate is transferred; a process chamber in which the substrate is processed under process conditions of the substrate; a measurer for measuring a mass of the substrate before the processing of the substrate starts and after the processing of the substrate ends; a calculator for calculating a film thickness value of the substrate from a difference in the mass measured by the measurer before the processing starts and after the processing ends; a determinator for determining whether the film thickness value calculated by the calculator is abnormal; a setter for setting the process conditions; and a controller for controlling the setter to change the process conditions when the determinator determines that the film thickness value is abnormal.