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公开(公告)号：US20220139675A1
公开(公告)日：2022-05-05
申请号：US17576557
申请日：2022-01-14
Applicant: Kokusai Electric Corporation
Inventor： Yuki YAMAKADO , Masanori NAKAYAMA , Katsunori FUNAKI , Tatsushi UEDA , Yasutoshi TSUBOTA , Yuichiro TAKESHIMA , Hiroto IGAWA , Eiko TAKAMI , Keita ICHIMURA
IPC: H01J37/32 , C23C16/455
Abstract: The present disclosure provides a method of manufacturing a semiconductor device, including: (a) loading a substrate with a film formed on a surface thereof into a process vessel; (b) generating a reactive species containing oxygen and a reactive species of a rare gas by converting a mixed gas containing the rare gas and an oxygen-containing gas into a plasma state; and (c) oxidizing the film by supplying the reactive species containing oxygen to the substrate together with the reactive species of the rare gas. In (b), a partial pressure ratio PN/PT, which is a ratio of a partial pressure PN of the rare gas in the process vessel to a total pressure PT of the mixed gas in the process vessel, is set to a value of 0.4 or less.
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公开(公告)号：US20240243019A1
公开(公告)日：2024-07-18
申请号：US18403818
申请日：2024-01-04
Applicant: Kokusai Electric Corporation
Inventor： Yuichiro TAKESHIMA , Masanori Nakayama , Yasutoshi Tsubota , Hiroto Igawa , Yuki Yamakado , Hiroki Kishimoto
CPC classification number: H01L22/26 , H01J37/32935 , H01J37/3299 , H01J2237/24585 , H01J2237/24592
Abstract: To suppress fluctuations in substrate processing results over time due to operations of a substrate processing apparatus, there is provided a technique that includes: a transfer chamber where a substrate is transferred; a process chamber in which the substrate is processed under process conditions of the substrate; a measurer for measuring a mass of the substrate before the processing of the substrate starts and after the processing of the substrate ends; a calculator for calculating a film thickness value of the substrate from a difference in the mass measured by the measurer before the processing starts and after the processing ends; a determinator for determining whether the film thickness value calculated by the calculator is abnormal; a setter for setting the process conditions; and a controller for controlling the setter to change the process conditions when the determinator determines that the film thickness value is abnormal.
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3.发明申请公开(公告)号：US20220005673A1
公开(公告)日：2022-01-06
申请号：US17477296
申请日：2021-09-16
Applicant: KOKUSAI ELECTRIC CORPORATION
Inventor： Yasutoshi TSUBOTA , Masanori NAKAYAMA , Katsunori FUNAKI , Tatsushi UEDA , Eiko TAKAMI , Yuichiro TAKESHIMA , Hiroto IGAWA , Yuki YAMAKADO , Keita ICHIMURA
Abstract: A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.
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公开(公告)号：US20210183645A1
公开(公告)日：2021-06-17
申请号：US17185399
申请日：2021-02-25
Applicant: Kokusai Electric Corporation
Inventor： Hiroto IGAWA , Masanori NAKAYAMA , Katsunori FUNAKI , Tatsushi UEDA , Yasutoshi TSUBOTA , Eiko TAKAMI , Yuichiro TAKESHIMA , Yuki YAMAKADO
Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.
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公开(公告)号：US20230097621A1
公开(公告)日：2023-03-30
申请号：US17945891
申请日：2022-09-15
Applicant: KOKUSAI ELECTRIC CORPORATION
Inventor： Hiroto IGAWA , Masanori NAKAYAMA , Katsunori FUNAKI , Tatsushi UEDA , Yasutoshi TSUBOTA , Yuichiro TAKESHIMA , Keita ICHIMURA , Yuki YAMAKADO , Hiroki KISHIMOTO
Abstract: A method of processing a substrate, includes: (a) modifying a surface of the substrate into a first oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a first processing gas in which oxygen and hydrogen are contained and a ratio of hydrogen in the oxygen and hydrogen of the first processing gas is a first ratio; and (b) modifying the first oxide layer into a second oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a second processing gas in which oxygen is contained and hydrogen is optionally contained and a ratio of hydrogen in the oxygen and hydrogen of the second processing gas is a second ratio smaller than the first ratio.
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Patent Agency Ranking
公开(公告)号：US20220415700A1
公开(公告)日：2022-12-29
申请号：US17903499
申请日：2022-09-06
Applicant: Kokusai Electric Corporation
Inventor： Takayuki SATO , Masaki MUROBAYASHI , Yuichiro TAKESHIMA , Tomokazu WAKUI
IPC: H01L21/687 , H01L21/67 , H01J37/32
Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is accommodated; a substrate mounting table provided in the process chamber and heated by a heater; and a substrate mounting table cover arranged on an upper surface of the substrate mounting table and configured such that the substrate is placed on an upper surface of the substrate mounting table cover, wherein the substrate mounting table cover is made of silicon carbide and is provided with a silicon oxide layer of a first thickness at least on the upper surface of the substrate mounting table cover where the substrate is placed.
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7.发明申请公开(公告)号：US20200211858A1
公开(公告)日：2020-07-02
申请号：US16817508
申请日：2020-03-12
Applicant: KOKUSAI ELECTRIC CORPORATION
Inventor： Masanori NAKAYAMA , Katsunori FUNAKI , Tatsushi UEDA , Yasutoshi TSUBOTA , Yuichiro TAKESHIMA , Hiroto IGAWA , Yuki YAMAKADO
IPC: H01L21/321 , H01L21/67
Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.
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公开(公告)号：US20240087927A1
公开(公告)日：2024-03-14
申请号：US18447533
申请日：2023-08-10
Applicant: Kokusai Electric Corporation
Inventor： Koichiro HARADA , Katsunori FUNAKI , Yuichiro TAKESHIMA , Van Chieu NGUYEN
CPC classification number: H01L21/67276 , H01J37/321 , H01J37/32449 , H01L21/02274 , H01L21/67017
Abstract: According to the present disclosure, there is provided a technique capable of suppressing a replacement of a quartz vessel due to an occurrence of a crack of the quartz vessel. There is provided a technique including: a quartz vessel provided with a process chamber; a gas supplier; a coil surrounding the quartz vessel and configured to excite a process gas by a plasma generated by supplying a high frequency power to the coil, wherein a distance between the coil and an outer peripheral surface of a first portion of the quartz vessel is set to be greater than a distance between the coil and an outer peripheral surface of a second portion of the quartz vessel, and wherein a silicon hydroxide film is formed on an inner peripheral surface of the first portion and the silicon hydroxide film is not formed on an inner peripheral surface of the second portion.
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公开(公告)号：US20230201889A1
公开(公告)日：2023-06-29
申请号：US18076552
申请日：2022-12-07
Applicant: Kokusai Electric Corporation
Inventor： Yuki YAMAKADO , Katsunori FUNAKI , Tatsushi UEDA , Yasutoshi TSUBOTA , Yuichiro TAKESHIMA , Keita ICHIMURA , Hiroto IGAWA , Hiroki KISHIMOTO
CPC classification number: B08B7/0035 , B08B9/08 , C23C16/4405 , H01J37/32449 , H01L21/02236 , B08B2209/08 , H01J2237/335
Abstract: There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.
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10.发明申请公开(公告)号：US20190006481A1
公开(公告)日：2019-01-03
申请号：US16125279
申请日：2018-09-07
Applicant: Kokusai Electric Corporation
Inventor： Masanori NAKAYAMA , Yuichiro TAKESHIMA , Hiroto IGAWA , Katsunori FUNAKI
IPC: H01L29/423 , H01L29/66 , H01L29/792 , H01L21/28 , H01L21/02
Abstract: Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide film. According to the technique described herein, there is provided a there is provided a method of manufacturing a semiconductor device, including: (a) preparing a substrate including a silicon oxide film and a polysilicon film formed on the silicon oxide film, wherein the polysilicon film includes a contact surface contacting the silicon oxide film and an exposed surface facing the contact surface; and (b) supplying a reactive species generated by plasma excitation of a gas containing hydrogen and oxygen to the exposed surface of the polysilicon film.
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