公开(公告)号：US20050092242A1

公开(公告)日：2005-05-05

申请号：US10696481

申请日：2003-10-29

申请人： Eric Wood

发明人： Eric Wood

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/48 ,  C30B25/08 ,  C30B31/10

CPC分类号： C23C16/481 ,  C23C16/44 ,  C30B25/08 ,  C30B31/10

摘要： A semiconductor processing chamber having a plurality of ribs on an exterior surface of the chamber is provided. The ribs are positioned relative to the chamber such that shadows cast into the chamber by the ribs are offset from one another, thus more uniformly distributing radiant energy entering the chamber. In one embodiment, the ribs are positioned on the exterior surface of the chamber so that they have dissimilar radial distances from a center of the chamber. When a substrate rotates within the chamber, shadows produced by the ribs on a first side of the chamber fall substantially between secondary shadows produced by the ribs on a second side of the chamber. Likewise, shadows produced by the ribs on the second side of the chamber fall substantially between the secondary shadows produced by the ribs on the first side of the chamber.

摘要翻译： 提供了在腔室的外表面上具有多个肋的半导体处理室。 肋相对于室定位，使得通过肋投射到室中的阴影彼此偏移，从而更均匀地分布进入室的辐射能。 在一个实施例中，肋被定位在腔室的外表面上，使得它们与腔室的中心具有不同的径向距离。 当衬底在室内旋转时，腔室第一侧上的肋产生的阴影基本上落在腔室第二侧上由肋产生的次级阴影之间。 类似地，由室的第二侧上的肋产生的阴影基本上落在由室的第一侧上的肋产生的次级阴影之间。

公开(公告)号：US6147020A

公开(公告)日：2000-11-14

申请号：US412959

申请日：1999-10-05

申请人： Masao Nishioka ,  Naotaka Kato

发明人： Masao Nishioka ,  Naotaka Kato

IPC分类号： G01N23/20 ,  C04B35/565 ,  C23C16/01 ,  C23C16/32 ,  C23C16/44 ,  C30B31/10 ,  C04B35/52

CPC分类号： C23C16/01 ,  C04B35/565 ,  C23C16/325 ,  C23C16/4418 ,  C30B31/10

摘要： A light-impermeable, high purity silicon carbide material including polycrystals of silicon carbide as a main ingredient, wherein the silicon carbide material has a porosity of not more than 0.1%, the content of each of metal elements contained in the silicon carbide material is not more than 200 ppb, a weight ratio of silicon relative to the entire weight of the silicon carbide material is 69.00 to 69.90 wt %, and a light transmittance of the silicon carbide material in a wavelength range of 0.4 to 25 .mu.m is not more than 0.05% per a thickness of 0.5 mm.

摘要翻译： 一种不透光，高纯度的碳化硅材料，包括碳化硅的多晶体作为主要成分，其中碳化硅材料的孔隙率不超过0.1％，碳化硅材料中所含的每种金属元素的含量不是 超过200ppb的硅相对于碳化硅材料的整体重量比为69.00〜69.90重量％，并且在0.4〜25μm的波长范围内的碳化硅材料的透光率不大于 每个厚度为0.5毫米0.05％。

公开(公告)号：US06142773A

公开(公告)日：2000-11-07

申请号：US375466

申请日：1999-08-17

申请人： Tomohisa Shimazu

发明人： Tomohisa Shimazu

IPC分类号： H01L21/22 ,  C23C16/44 ,  C23C16/54 ,  C30B25/08 ,  C30B31/10 ,  F27D99/00 ,  H01L21/205 ,  H01L21/31 ,  H01L21/324 ,  F27D3/12

CPC分类号： F27D99/0073 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/54 ,  C30B25/08 ,  C30B31/10 ,  Y10S277/914

摘要： The process tube of a vertical heat-treating apparatus for semiconductor wafers has a port at the bottom to be opened and closed by a lid. A sealing mechanism is arranged to seal the connecting portion between the flange of the port and the flange of the lid. The flanges are provided with annular mirror surfaces on the inner side, which face and contact each other to form an inner seal. The flanges are also provided with annular counter surfaces on the outer side, which face each other with a gap therebetween. A metal sheet member is arranged in the gap such that an outer seal is formed by the metal sheet member and the counter surfaces. The metal sheet member has sheets vacuum-stuck onto the counter surfaces, respectively. A buffer space is formed between the inner and outer seals, and is vacuum-exhausted by an exhaust unit.

摘要翻译： 用于半导体晶片的垂直热处理装置的处理管具有通过盖打开和关闭的底部的端口。 密封机构被设置为密封端口的凸缘和盖的凸缘之间的连接部分。 凸缘在内侧设置有环形镜面，其面对并彼此接触以形成内密封。 凸缘还在外侧设置有环形的相对表面，它们彼此面对并具有间隙。 金属片构件布置在间隙中，使得由金属片构件和对置表面形成外部密封件。 金属片构件具有分别真空粘附到对置表面上的片。 在内密封件和外密封件之间形成缓冲空间，并由排气单元进行真空排气。

公开(公告)号：US6101844A

公开(公告)日：2000-08-15

申请号：US22056

申请日：1998-02-10

申请人： Jack D. Fowler ,  Robert Parvin ,  Jeffrey Kowalski ,  Patrick W. Wiesen

发明人： Jack D. Fowler ,  Robert Parvin ,  Jeffrey Kowalski ,  Patrick W. Wiesen

IPC分类号： H01L21/22 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B31/10 ,  H01L21/205 ,  H01L21/324 ,  C23C16/00

CPC分类号： C23C16/4407 ,  C23C16/44 ,  C23C16/45578 ,  C30B25/08 ,  C30B31/10

摘要： A double wall reaction chamber assembly comprising a cylindrical inner wall and a cylindrical outer wall axially parallel thereto, the inner wall having an annular junction with a thickened annular junction flange on the outer surface thereof. The lower end of the outer wall being fused to the outer surface of the thickened annular junction. The outer surface of the inner wall and the inner surface of the annular junction flange define a sloping annular drainage channel to a downwardly sloping drainage port, enabling liquid to drain from the junction. The double wall reaction chamber assembly has a cylindrical inner wall and a cylindrical outer wall axially parallel thereto. It has a lower end fused to the inner wall. A gas distribution tube has a gas inlet end and a gas distributor end, the gas distributor end comprising a split tee having a junction. One leg of the tee extends in a first direction from the junction around the inner wall to a first outlet terminus, and the other leg of the tee extends from the junction in a second direction around the inner wall in a direction opposite to the first direction and to a second outlet terminus. The legs of the tee slope downward from the junction to the respective outlet terminus, whereby liquid in the gas distributor will completely drain from the assembly.

摘要翻译： 一种双壁反应室组件，包括圆柱形内壁和与其平行的圆柱形外壁，内壁具有与其外表面上的增厚的环形接合凸缘的环形接合部。 外壁的下端与增厚的环形结的外表面熔合。 内壁的外表面和环形接合凸缘的内表面限定了向下倾斜的排水口的倾斜的环形排水通道，使得液体能够从连接处排出。 双壁反应室组件具有圆柱形内壁和与其平行的圆柱形外壁。 它具有与内壁熔合的下端。 气体分配管具有气体入口端和气体分配器端，气体分配器端包括具有连接点的分流三通。 三通的一条腿从第一方向从内壁的连接处延伸到第一出口端，并且三通的另一条腿在第二方向上以与第一方向相反的方向围绕内壁延伸 并到第二个出口总站。 三通的腿从接头向下倾斜到相应的出口端，由此气体分配器中的液体将完全从组件排出。

公开(公告)号：US5961323A

公开(公告)日：1999-10-05

申请号：US132591

申请日：1998-08-11

申请人： Chunghsin Lee

发明人： Chunghsin Lee

IPC分类号： C23C16/46 ,  C23C16/54 ,  C30B25/08 ,  C30B31/10 ,  H01L21/00 ,  H01L21/22 ,  H01L21/677 ,  F27D5/00

CPC分类号： H01L21/67109 ,  C23C16/46 ,  C23C16/54 ,  C30B25/08 ,  C30B31/10 ,  H01L21/67115 ,  H01L21/67778

摘要： A vertical semiconductor wafer processing furnace that includes a single housing having first and second vertical furnaces each having a heating chamber for heat treating a semiconductor wafer. The first and second vertical furnaces are asymmetrically disposed relative to each other to reduce the overall footprint of the processing furnace. Each vertical furnace includes a wafer support assembly that includes support structure, such as a wafer boat, boat elevator, motor and guide rod, for axially mounting a selected number of semiconductor wafers. A translation element selectively moves one of the support elements along the vertical axis into and out of the process tube, and a wafer transfer element selectively transfers semiconductor wafers to or from one of the support elements. The furnace further includes a heating sleeve or envelope that is adapted to control the ambient fluid environment surrounding the support structure and which is independently movable relative to support structure. The heating sleeve is adapted to sealingly engage a portion of the support element to create a fluid-tight seal forming a loadlock processing assembly. This assembly is coupled to a vertical translation assembly that selectively, vertically moves the processing assembly into the heating chamber of the vertical furnace. Additionally, the heating sleeve an be vertically moved relative to the support structure to engage and disengage repetitively, easily and automatically the heating sleeve relative to the support structure.

摘要翻译： 一种垂直半导体晶片处理炉，其包括具有第一和第二垂直炉的单个壳体，每个立式炉具有用于热处理半导体晶片的加热室。 第一和第二立式炉相对于彼此不对称地设置，以减少处理炉的整体占地面积。 每个立式炉包括晶片支撑组件，该晶片支撑组件包括用于轴向安装选定数量的半导体晶片的支撑结构，例如晶片舟皿，船只升降机，马达和导杆。 平移元件选择性地将支撑元件中的一个沿垂直轴移动进入和离开处理管，并且晶片传送元件选择性地将半导体晶片传送到支撑元件之一或从其中的一个支撑元件传输。 炉还包括加热套筒或套管，其适于控制围绕支撑结构的周围环境流体环境，并且可相对于支撑结构独立地移动。 加热套筒适于密封地接合支撑元件的一部分以形成形成负载锁处理组件的流体密封的密封件。 该组件联接到垂直平移组件，该垂直平移组件选择性地将处理组件垂直移动到垂直炉的加热室中。 此外，加热套筒相对于支撑结构垂直移动以相对于支撑结构重复地，容易地和自动地接合和分离加热套筒。

公开(公告)号：US5846073A

公开(公告)日：1998-12-08

申请号：US814718

申请日：1997-03-07

申请人： Robert A. Weaver

发明人： Robert A. Weaver

IPC分类号： C30B31/10 ,  C30B31/12 ,  H01L21/00 ,  F27D3/12

CPC分类号： H01L21/67109 ,  C30B31/10 ,  C30B31/12

摘要： A vertically oriented thermal processor supports semiconductor wafers within a vertical process chamber within a process tube about which a furnace heater is supported. A base plate support assembly mates with a processing vessel such that the interior surface in proximate fluid adjoining relation with the processing chamber is formed from substantially-inert materials. Additionally, the base plate support assembly includes fluid cooling features that protect seals formed by devices passing through the base plate assembly into the processing chamber for delivery of processing gases and monitoring of thermal conditions therein. Additionally, cooling features are provided in a base plate in order to prevent components from becoming heat sinks or heat sources in relation to the processing chamber.

公开(公告)号：US5820366A

公开(公告)日：1998-10-13

申请号：US702257

申请日：1996-08-23

申请人： Chunghsin Lee

发明人： Chunghsin Lee

IPC分类号： C23C16/46 ,  C23C16/54 ,  C30B25/08 ,  C30B31/10 ,  H01L21/00 ,  H01L21/22 ,  H01L21/677 ,  F27D3/12

CPC分类号： H01L21/67109 ,  C23C16/46 ,  C23C16/54 ,  C30B25/08 ,  C30B31/10 ,  H01L21/67115 ,  H01L21/67778

摘要： A vertical semiconductor wafer processing furnace that includes a single housing having first and second vertical furnaces each having a heating chamber for heat treating a semiconductor wafer. The first and second vertical furnaces are asymmetrically disposed relative to each other to reduce the overall footprint of the processing furnace. Each vertical furnace includes a wafer support assembly that includes support structure, such as a wafer boat, boat elevator, motor and guide rod, for axially mounting a selected number of semiconductor wafers. A translation element selectively moves one of the support elements along the vertical axis into and out of the process tube, and a wafer transfer element selectively transfers semiconductor wafers to or from one of the support elements. The furnace further includes a heating sleeve or envelope that is adapted to control the ambient fluid environment surrounding the support structure and which is independently movable relative to support structure. The heating sleeve is adapted to sealingly engage a portion of the support element to create a fluid-tight seal forming a loadlock processing assembly. This assembly is coupled to a vertical translation assembly that selectively, vertically moves the processing assembly into the heating chamber of the vertical furnace. Additionally, the heating sleeve an be vertically moved relative to the support structure to engage and disengage repetitively, easily and automatically the heating sleeve relative to the support structure.

公开(公告)号：US5645417A

公开(公告)日：1997-07-08

申请号：US559592

申请日：1995-10-09

申请人： Keith W. Smith

发明人： Keith W. Smith

IPC分类号： C30B25/08 ,  C30B31/10 ,  F27B9/04

CPC分类号： C30B31/10 ,  C30B25/08

摘要： A tube for use in a thermal processing furnace. The tube comprises an elongated cylindrical tube having an inner surface with a plurality of dimples disposed thereon. In one preferred version of the invention, the dimples are formed as an integral part of the inner surface of the cylindrical tube. In another aspect of the invention, the dimpled furnace tube is incorporated into a thermal processing furnace. In this aspect of the invention, the furnace includes a furnace tube having an inner surface describing an elongated cylindrical heated chamber for receiving and processing a plurality of axially aligned spaced apart semiconductor wafers. The inner surface has a plurality of dimples disposed thereon. The furnace further includes an inlet for introducing reactant and/or inert gases into one end of the cylindrical chamber to flow axially within the chamber by the wafers and an outlet for removing the gases from the cylindrical chamber.

摘要翻译： 用于热处理炉的管。 管包括细长的圆柱形管，其具有设置在其上的多个凹坑的内表面。 在本发明的一个优选方案中，凹坑形成为圆柱形管的内表面的整体部分。 在本发明的另一方面，将波纹炉管并入热处理炉中。 在本发明的这个方面，炉子包括炉管，其具有描述细长圆柱形加热室的内表面，用于接收和处理多个轴向对齐的间隔开的半导体晶片。 内表面上设置有多个凹坑。 炉子还包括用于将反应物和/或惰性气体引入圆柱形腔室的一端以通过晶片在腔室内轴向流动的入口和用于从圆柱形腔室去除气体的出口。

公开(公告)号：US5517001A

公开(公告)日：1996-05-14

申请号：US429799

申请日：1995-04-27

申请人： Kevin B. Peck ,  Ronald E. Erickson ,  Stephen H. Matthews

发明人： Kevin B. Peck ,  Ronald E. Erickson ,  Stephen H. Matthews

IPC分类号： F27D1/00 ,  C30B31/10 ,  F27B5/04 ,  F27B5/14 ,  F27D7/06 ,  F27D21/00 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31 ,  F27B5/16

CPC分类号： H01L21/67115 ,  C30B31/10

摘要： Performance of a high temperature diffusion furnace is enhanced by an improved multi-furnace module design. The furnace is constructed of materials suitable for clean room environments with an adjustable leveling frame assembly. A slide out assembly and heating element alignment mechanism of individual furnace tube modules with a heating element hoist mechanism allows for enhanced maintainability. Heat treatment performance is improved by a sealed heating element with individual furnace module cooling system. Improved thermocouple positioning and composition has also enhanced heat treatment process control and heating element maintainability.

公开(公告)号：US5434090A

公开(公告)日：1995-07-18

申请号：US172988

申请日：1993-12-27

申请人： Herng-Der Chiou ,  Raul P. Torres

发明人： Herng-Der Chiou ,  Raul P. Torres

IPC分类号： C23C16/44 ,  C30B25/08 ,  C30B31/10 ,  C23C16/00

CPC分类号： C30B31/10 ,  C23C16/4401 ,  C30B25/08 ,  Y10S438/98 ,  Y10T29/41

摘要： A solid metal-gettering material is used between walls of a double-walled processing chamber, such as a furnace tube and an RTP chamber. The solid metal-gettering material getters metal before the metal reaches the substrate within the processing zone of a the processing chamber. Polysilicon pellets and silicon carbide pellets are examples of types of solid metal-getting materials, although other materials may be used. A purge gas may be flow within the gap or the gap may be evacuated while the pellets lie within the gap. Limitations on shapes and sizes of the pellets and purge gas flow rate are determined by the size of the gap.

摘要翻译： 在双壁处理室的壁之间使用固体金属吸气材料，例如炉管和RTP室。 在金属到处理室的加工区内的基板之前，固体金属吸除材料吸收金属。 多晶硅颗粒和碳化硅颗粒是固体金属材料的类型的实例，尽管可以使用其它材料。 吹扫气体可以在间隙内流动，或者间隙可以被排空，而颗粒位于间隙内。 颗粒的形状和尺寸的限制以及吹扫气体流速由间隙的尺寸确定。