公开(公告)号：US11001939B2

公开(公告)日：2021-05-11

申请号：US16701492

申请日：2019-12-03

申请人： King Abdullah University of Science and Technology

发明人： Osman Bakr ,  Makhsud I. Saidaminov ,  Ahmed L. Abdelhady ,  Kristian Rahbek Knudsen

IPC分类号： C30B29/36 ,  C30B29/12 ,  C30B7/00 ,  C01G1/06 ,  C30B7/14 ,  C30B31/12 ,  C30B35/00 ,  H01L51/42

摘要： Embodiments of the present disclosure provide methods of growing organometallic halide structures such as single crystal organometallic halide perovskites, methods of use, devices incorporating organometallic halide structures, and the like.

公开(公告)号：US10557214B2

公开(公告)日：2020-02-11

申请号：US15560412

申请日：2016-03-24

申请人： King Abdullah University of Science and Technology

发明人： Osman Bakr ,  Makhsud I. Saidaminov ,  Ahmed L. Abdelhady ,  Kristian Rahbek Knudsen

IPC分类号： C30B7/14 ,  C30B29/12 ,  C01G1/06 ,  C30B31/12 ,  C30B35/00

摘要： Methods of growing organometallic halide structures such as AMX3 single crystal organometallic halide perovskites, using the inverse temperature solubility.

公开(公告)号：US20050236395A1

公开(公告)日：2005-10-27

申请号：US11137653

申请日：2005-05-25

申请人： Paul Timans ,  Narasimha Acharva

发明人： Paul Timans ,  Narasimha Acharva

IPC分类号： H05B3/00 ,  C30B31/12 ,  F27D11/02 ,  H01L21/00 ,  H01L21/26 ,  H01L21/268 ,  H05B1/02 ,  H05B3/68

CPC分类号： H01L21/67248 ,  C30B31/12 ,  H01L21/67115 ,  Y10S438/928

摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

公开(公告)号：US6079874A

公开(公告)日：2000-06-27

申请号：US19426

申请日：1998-02-05

申请人： Andreas G. Hegedus

发明人： Andreas G. Hegedus

IPC分类号： C23C16/48 ,  C23C16/52 ,  C30B25/10 ,  C30B31/12 ,  H01L21/00 ,  G01K3/00 ,  C23C16/00 ,  G01J5/00

CPC分类号： H01L21/67248 ,  C23C16/481 ,  C23C16/52 ,  C30B25/10 ,  C30B31/12 ,  H01L21/67115

摘要： An apparatus accurately measures a temperature of a substrate in a thermal processing chamber. The apparatus has a support structure to support the substrate within the thermal processing chamber. A first probe is provided with an input end positioned to receive radiation from the substrate during thermal processing. A second probe is also provided with an input end positioned to receive radiation from the substrate during thermal processing. The second probe is positioned such that it is angularly offset from the first probe so radiation provided at an output end of the second probe is out of phase with radiation provided at the output end of the first probe. A junction receives and combines radiation from the output ends of the first and second probes. The radiation is combined to provide an accurate representation of the temperature of a local region of the substrate by compensating for a temperature gradient between the support structure and the substrate.

摘要翻译： 一种装置精确地测量热处理室中的衬底的温度。 该装置具有用于支撑热处理室内的基板的支撑结构。 第一探针设置有输入端，定位成在热处理期间接收来自衬底的辐射。 第二探针还设置有输入端，定位成在热处理期间接收来自衬底的辐射。 第二探针定位成使得其与第一探针成角度地偏移，使得在第二探针的输出端处提供的辐射与在第一探针的输出端处提供的辐射异相。 接头接收并组合来自第一和第二探头的输出端的辐射。 辐射被组合以通过补偿支撑结构和衬底之间的温度梯度来提供衬底的局部区域的温度的精确表示。

公开(公告)号：US5908292A

公开(公告)日：1999-06-01

申请号：US814722

申请日：1997-03-07

申请人： John Z. Smith ,  Martin Jones ,  Paul McHugh ,  Robert A. Weaver

发明人： John Z. Smith ,  Martin Jones ,  Paul McHugh ,  Robert A. Weaver

IPC分类号： C30B31/12 ,  H01L21/00 ,  H01L21/677 ,  F27B15/00

CPC分类号： H01L21/67757 ,  C30B31/12 ,  H01L21/67109

摘要： A vertically oriented thermal processor for processing batches of semiconductor wafers held within a processing chamber. The processing chamber is contained within a processing vessel. Processing gases are discharged through a processing chamber outflow. An outflow cooler is included to cool gases exhausting from the processing chamber outflow. The outflow cooler includes a fluid heat exchanger and a flow diverter which directs the exhausting gases against cooled walls of the outflow cooler. The cooler also preferably has a liner which lines a casing to which the heat exchanger is connected.

摘要翻译： 一种垂直取向的热处理器，用于处理保存在处理室内的批次的半导体晶片。 处理室包含在处理容器内。 处理气体通过处理室流出而排出。 包括流出冷却器以冷却从处理室流出排出的气体。 流出冷却器包括一个流体热交换器和一个分流器，它将排出的气体引导到流出冷却器的冷却壁。 冷却器还优选地具有将热交换器连接到的壳体排列的衬套。

公开(公告)号：US5900177A

公开(公告)日：1999-05-04

申请号：US873351

申请日：1997-06-11

申请人： George T. Lecouras ,  Dennis P. Rodier

发明人： George T. Lecouras ,  Dennis P. Rodier

IPC分类号： H01L21/22 ,  C30B25/10 ,  C30B31/12 ,  G05D23/00 ,  G05D23/19 ,  G05D23/22 ,  H01L21/00 ,  H05B1/02

CPC分类号： H01L21/67115 ,  C30B25/10 ,  C30B31/12

摘要： A vertical rapid thermal processing (RTP) system (10) is provided, comprising a vertical process chamber (20) extending along a longitudinal axis (X), and a movable platform (32) disposed within the process chamber and having a support surface upon which one or more substrates such as semiconductor wafers (W) may be mounted for processing. A temperature control subsystem (56, 58, 60) establishes a continuous temperature gradient within the vertical process chamber along the longitudinal axis. The temperature control subsystem comprises a plurality of chamber sidewall heating elements (24) located at different vertical positions along the longitudinal axis. Each of the plurality of heating elements is controlled independently of the other of the plurality of heating elements. The plurality of longitudinally oriented heating elements provides an active sidewall heating mechanism which results in a consistent and continuous temperature gradient within the chamber, independent of the position of the wafer within the chamber or the number of wafers which have been processed.

摘要翻译： 提供了垂直快速热处理（RTP）系统（10），其包括沿着纵向轴线（X）延伸的垂直处理室（20）和设置在处理室内的可移动平台（32），并且具有支撑表面 可以安装一个或多个衬底，例如半导体晶片（W）用于处理。 温度控制子系统（56,58,60）沿着纵向轴线在垂直处理室内建立连续的温度梯度。 温度控制子系统包括沿着纵向轴线位于不同垂直位置的多个室侧壁加热元件（24）。 多个加热元件中的每一个独立于多个加热元件中的另一个加以控制。 多个纵向取向的加热元件提供主动侧壁加热机构，其导致腔室内的一致且连续的温度梯度，与晶片在腔室内的位置或已经被处理的晶片数量无关。

公开(公告)号：US5781693A

公开(公告)日：1998-07-14

申请号：US687150

申请日：1996-07-24

申请人： David S. Ballance ,  Benjamin Bierman ,  James V. Tietz

发明人： David S. Ballance ,  Benjamin Bierman ,  James V. Tietz

IPC分类号： B01J4/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C23F4/00 ,  C30B25/10 ,  C30B25/14 ,  C30B31/12 ,  C30B31/16 ,  H01L21/205 ,  H01L21/22 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/20

CPC分类号： C23C16/45574 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/481 ,  C30B25/10 ,  C30B25/14 ,  C30B31/12 ,  C30B31/16

摘要： A showerhead for use with a lamp head in a thermal processing chamber, the lamp head including a high intensity source which emits radiation that heats a substrate within the chamber, the showerhead including a top window on a side of the showerhead that is adjacent to the lamp head; a bottom window on a side of the showerhead that is adjacent to the substrate during processing; and a gas supply inlet through which a gas is introduced into a space between the top and bottom windows, wherein the top and bottom windows are transparent to the radiation from the source in the lamp head and wherein the bottom window includes a plurality of gas distribution holes through which gas is injected from the space between the top and bottom windows into the chamber.

摘要翻译： 一种与热处理室中的灯头一起使用的喷头，所述灯头包括发射辐射的高强度源，所述辐射辐射加热所述腔室内的衬底，所述喷头包括位于所述淋浴头侧面上的顶部窗口， 灯头; 在处理过程中在喷头的与衬底相邻的一侧上的底部窗口; 以及气体供给入口，通过所述气体供给入口将气体引入到所述顶部和底部窗口之间的空间中，其中所述顶部和底部窗口对于来自所述灯头中的所述源的辐射是透明的，并且其中所述底部窗口包括多个气体分布 气体从顶部和底部窗口之间的空间注入到腔室中。

公开(公告)号：US5762713A

公开(公告)日：1998-06-09

申请号：US756632

申请日：1996-11-26

申请人： Ajit Pramod Paranjpe

发明人： Ajit Pramod Paranjpe

IPC分类号： C23C16/48 ,  C30B31/12 ,  C23L16/00

CPC分类号： C23C16/481 ,  C30B31/12

摘要： A RTP system and method. A first lamp zone (108) is located around a periphery of a wafer (102) for heating the center of the wafer (102) and a second lamp zone (114) is located around the periphery of the wafer (102) for heating the edge of the wafer (102). The chamber (104) includes highly reflective surfaces (106). Light from the first and second lamp zones (108, 114) is reflected off of the highly reflective surfaces (106) at least three time before reaching the wafer (102). Thus, the wafer (102) is isotropically heated and uniform wafer heating is achieved.

公开(公告)号：US5743643A

公开(公告)日：1998-04-28

申请号：US732020

申请日：1996-10-16

申请人： Christian M. Gronet ,  James F. Gibbons

发明人： Christian M. Gronet ,  James F. Gibbons

IPC分类号： C23C16/48 ,  C30B25/10 ,  C30B31/12 ,  C30B31/18 ,  F27B17/00 ,  F27D99/00 ,  G01J5/00 ,  G01J5/06 ,  H01L21/00 ,  H02G3/04

CPC分类号： F27D99/0006 ,  C23C16/481 ,  C23C16/482 ,  C30B25/10 ,  C30B25/105 ,  C30B31/12 ,  C30B31/18 ,  F27B17/0025 ,  F27D99/0033 ,  G01J5/0003 ,  G01J5/06 ,  H01L21/67115 ,  H02G3/0425

摘要： A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.

公开(公告)号：US5710407A

公开(公告)日：1998-01-20

申请号：US479889

申请日：1995-06-07

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.