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公开(公告)号:US11518934B2
公开(公告)日:2022-12-06
申请号:US16435846
申请日:2019-06-10
IPC分类号: C09K11/00 , C09K11/66 , H01L21/02 , B01J19/00 , C09K11/54 , C09K11/58 , B01J13/00 , B01J14/00 , C01G15/00 , C01G21/21 , C01G51/00 , C09K11/02 , H01L31/0352 , H01L33/04 , B82Y30/00 , B82Y20/00 , B82Y35/00
摘要: Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.
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公开(公告)号:US11001939B2
公开(公告)日:2021-05-11
申请号:US16701492
申请日:2019-12-03
摘要: Embodiments of the present disclosure provide methods of growing organometallic halide structures such as single crystal organometallic halide perovskites, methods of use, devices incorporating organometallic halide structures, and the like.
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公开(公告)号:US10767110B2
公开(公告)日:2020-09-08
申请号:US15966078
申请日:2018-04-30
IPC分类号: C09K11/00 , B01J13/00 , C09K11/66 , H01L21/02 , B01J19/00 , C09K11/54 , C09K11/58 , B01J14/00 , C01G15/00 , C01G21/21 , C01G51/00 , C09K11/02 , H01L31/0352 , H01L33/04 , B82Y30/00 , B82Y20/00 , B82Y35/00
摘要: Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.
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公开(公告)号:US10557214B2
公开(公告)日:2020-02-11
申请号:US15560412
申请日:2016-03-24
摘要: Methods of growing organometallic halide structures such as AMX3 single crystal organometallic halide perovskites, using the inverse temperature solubility.
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公开(公告)号:US10301543B2
公开(公告)日:2019-05-28
申请号:US15025918
申请日:2014-10-03
IPC分类号: C09K11/66 , C09K11/54 , C09K11/58 , C09K11/02 , C01G15/00 , C01G51/00 , C01G21/21 , H01L21/02 , B01J19/00 , B01J13/00 , B01J14/00 , H01L31/0352 , H01L33/04 , B82Y30/00 , B82Y20/00 , B82Y35/00
摘要: Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.
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