Surface roughness and emissivity determination

    公开(公告)号:US12098914B2

    公开(公告)日:2024-09-24

    申请号:US17936608

    申请日:2022-09-29

    CPC classification number: G01B11/303 G01J5/0003 G01J5/0806 G01J5/0808

    Abstract: A system includes a radiation source configured to emit a radiation beam. The system further includes a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an object. The system further includes a second optical sensor configured to detect a second intensity of a second portion of the radiation beam scattered by the surface of the object. The system further includes a processing device communicatively coupled to the first optical sensor and the second optical sensor. The processing device is configured to determine at least one of a roughness or an emissivity of the surface of the object based on a comparison of the first intensity and the second intensity.

    EMISSIVITY INDEPENDENCE TUNING
    5.
    发明公开

    公开(公告)号:US20230392987A1

    公开(公告)日:2023-12-07

    申请号:US17832296

    申请日:2022-06-03

    CPC classification number: G01J5/0003 G01J5/80 G01J2005/0074

    Abstract: Embodiments disclosed herein include a method of calibrating a processing tool. In an embodiment, the method comprises providing a first substrate with a first emissivity, a second substrate with a second emissivity, and a third substrate with a third emissivity. In an embodiment, the process may include running a recipe on each of the first substrate, the second substrate, and the third substrate, where the recipe includes a set of calibration attributes. In an embodiment, the method may further comprise measuring a layer thickness on each of the first substrate, the second substrate, and the third substrate. In an embodiment, the method further comprises determining if the layer thicknesses are uniform.

    METHOD AND SYSTEM FOR CALIBRATING THERMAL IMAGING SYSTEMS

    公开(公告)号:US20180217004A1

    公开(公告)日:2018-08-02

    申请号:US15881757

    申请日:2018-01-27

    Applicant: Microsanj, LLC

    Abstract: A method for determining change in temperature of different parts of an electronic or optoelectronic device between un-energized and energized states without contacting the device. The method includes establishing a reference image form an unexcited device by illuminating the device with an optical signal and capturing the reference image from the device in an un-energized state, illuminating the device with an optical signal during an energization pulse having a predetermined pulse width and pulse magnitude and capturing a plurality of on images from the device at different time delays, determining a transient temperature profile, calibrating the temperature profile for one or more regions of the device with unknown thermoreflectance coefficient based on the determined transient temperature profile for the one or more regions of the device with known thermoreflectance coefficient.

    Characterization of spectral emissivity via thermal conductive heating and in-situ radiance measurement using a low-e mirror

    公开(公告)号:US09970821B2

    公开(公告)日:2018-05-15

    申请号:US14688617

    申请日:2015-04-16

    CPC classification number: G01J5/0003 G01J5/00 G01J5/0887

    Abstract: A high SNR in-situ measurement of sample radiance in a low-temperature ambient environment is used to accurately characterize sample emissivity for transmissive, low-emissivity samples. A low-e mirror is positioned behind the sample such that the sample and low-e mirror overfill the field-of-view (FOV) of the radiometer. The sample is heated via thermal conduction in an open environment. Thermal conduction heats the sample without raising the background radiance appreciably. The low-e mirror presents both a low emission background against which to measure the sample radiance and reflects radiance from the back of the sample approximately doubling the measured signal. The low-e mirror exhibits a reflectance of at least 90% and preferably greater than 98% and an emissivity of at most 7.5% and preferably less than 2% over the spectral and temperature ranges at which the sample emissivity is characterized.

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