Abstract:
A semiconductor failure analysis device includes a first analysis unit that emits first irradiation light along a first path set on a first main surface of a semiconductor device, a second analysis unit that emits second irradiation light along a second path set on a second main surface that is a back side of the first main surface, an electric signal acquisition unit that receives an electric signal output from the semiconductor device irradiated with the first irradiation light and the second irradiation light, and a computer that controls the second analysis unit. A size of a first irradiation region is different from a size of a second irradiation region. The computer emits the first irradiation light and the second irradiation light while a state where the entire second irradiation region overlaps the first irradiation region is maintained.
Abstract:
A film thickness measuring apparatus measures a film thickness of a sample during a manufacturing step. The film thickness measuring apparatus includes a lens focusing light (plasma light) generated in the manufacturing step and reflected by one surface of the sample, an inclined dichroic mirror having a transmissivity and a reflectivity changing in accordance with a wavelength in a predetermined wavelength region and separating light focused by the lens through transmission and reflection, an area sensor capturing an image of light separated by the inclined dichroic mirror, and a control apparatus estimating the film thickness of the sample on the basis of a signal from the area sensor capturing an image of light and obtaining a film thickness distribution on the one surface of the sample. Light reflected by the sample includes light having a wavelength included in the predetermined wavelength region of the inclined dichroic mirror.
Abstract:
A solid immersion lens unit includes a solid immersion lens and a holder for swingably holding the solid immersion lens. The solid immersion lens includes a first lens portion formed of a first material, and a second lens portion formed of a second material having a refractive index smaller than a refractive index of the first material and coupled to the first lens portion. The first lens portion includes a contact surface for contacting with an observation object and a convex first spherical surface. The second lens portion includes a concave second spherical surface facing the first spherical surface and a convex third spherical surface to be disposed to face an objective lens. The holder has a contact portion configured to be contactable with the third spherical surface.
Abstract:
An inspection apparatus is an inspection apparatus for inspecting a sample in which a plurality of light-emitting elements including a first light-emitting element and a second light-emitting element arranged around the first light-emitting element is formed, the inspection apparatus including an excitation light source that generates excitation light to irradiate the sample, a camera that images fluorescence from the sample, and a determining unit that calculates a relative luminance of fluorescence from the first light-emitting element based on the fluorescence from the first light-emitting element and fluorescence from the second light-emitting element imaged by the camera, and compares a calculated value based on an absolute luminance and the relative luminance of the fluorescence from the first light-emitting element with a predetermined threshold value, thereby determining a quality of the first light-emitting element.
Abstract:
An embodiment includes a light source that generates measurement light including a first wavelength, a light source that generates stimulation light including a second wavelength, an optical coupling unit that is a WDM optical coupler including optical fibers branched between an output end and input ends, the input ends being optically coupled to an output of the light sources, and the WDM optical coupler combining the measurement light with the stimulation light and outputting the combination light from the output end, a photodetector that detects an intensity of reflected light from a DUT, a light irradiation and guide system that guides the combination light toward a measurement point on the DUT and guides the reflected light from the measurement point toward the photodetector, and a galvanometer mirror that moves the measurement point, and the optical fibers propagate light in a single mode for the first wavelength.
Abstract:
The solid immersion lens unit includes: a solid immersion lens having a contact surface allowed to be in contact with an inspection object and a spherical surface allowed to be opposite to an objective lens; a holder holding the solid immersion lens; a magnet provided to the holder; and a spherical body rotatably held by a magnetic force of the magnet at a position opposite to the spherical surface. The holder swingably holds the solid immersion lens in a state where the spherical surface is in contact with the spherical body.
Abstract:
A shield plate that is used for non-contact measurement of a temperature of a measurement target is provided. The shield plate includes a base of which a temperature is adjustable. The base includes a central shield portion that is formed in the shield plate, an opening that is formed around the central shield portion, and a blackbody surface that is formed on one surface of the base to include a portion opposite to the opening with the central shield portion interposed therebetween and to radiate infrared rays.
Abstract:
A heat source position inside a measurement object is identified with high accuracy by improving time resolution.An analysis system according to the present invention is an analysis system that identifies a heat source position inside a measurement object, and includes a condition setting unit that sets a measurement point for one surface of the measurement object, a tester that applies a stimulation signal to the measurement object, a light source that irradiates the measurement point of the measurement object with light, a photo detector that detects light reflected from a predetermined measurement point on the surface of the measurement object according to the irradiation of light and outputs a detection signal, and an analysis unit that derives a distance from the measurement point to the heat source position based on the detection signal and the stimulation signal and identifies the heat source position.
Abstract:
An inspection device includes a light source, an MO crystal disposed to face a semiconductor device (D), an object lens configured to concentrate the light output from the light source onto the MO crystal, a holder configured to hold the MO crystal, a flexible member interposed between the MO crystal and the holder, and an object lens drive unit configured to cause the MO crystal to contact the semiconductor device (D) by causing the holder to be moved in the optical axis direction of the object lens, wherein, when the MO crystal contacts the semiconductor device (D), the flexible member is bent, so that an incident plane is inclined in a range in which an inclination angle of the incident plane of the light in the MO crystal with respect to a plane orthogonal to the optical axis is less than or equal to an aperture angle.
Abstract:
A semiconductor device measurement apparatus 1A includes a tester 2 that generates an operational pulse signal to be input to a semiconductor device 3, a light source 5 that generates light, a light branch optical system 6 that irradiates the semiconductor device with the light, a light detector 7 that detects reflected light obtained by the semiconductor device 3 reflecting the light, and outputs a detection signal, an analog signal amplifier 8 that amplifies the detection signal and outputs an amplified signal, and an analysis apparatus 10 that analyzes an operation of the semiconductor device 3 based on the amplified signal and a predetermined correction value, wherein the predetermined correction value is obtained based on a signal obtained by the analog signal amplifier 8 amplifying a signal corresponding to a harmonic of a fundamental frequency of the operational pulse signal.