Abstract:
A semiconductor device measurement apparatus 1A includes a tester 2 that generates an operational pulse signal to be input to a semiconductor device 3, a light source 5 that generates light, a light branch optical system 6 that irradiates the semiconductor device with the light, a light detector 7 that detects reflected light obtained by the semiconductor device 3 reflecting the light, and outputs a detection signal, an analog signal amplifier 8 that amplifies the detection signal and outputs an amplified signal, and an analysis apparatus 10 that analyzes an operation of the semiconductor device 3 based on the amplified signal and a predetermined correction value, wherein the predetermined correction value is obtained based on a signal obtained by the analog signal amplifier 8 amplifying a signal corresponding to a harmonic of a fundamental frequency of the operational pulse signal.
Abstract:
An inspection apparatus is an inspection apparatus includes an excitation light source that generates excitation light to irradiate the object, a dichroic mirror that separates fluorescence from the sample by transmitting or reflecting the fluorescence according to a wavelength, a camera that images fluorescence reflected by the dichroic mirror, a camera that images fluorescence transmitted through the dichroic mirror, and a control apparatus that derives color irregularity information of a light-emitting element based on a first fluorescence image acquired by the camera and a second fluorescence image acquired by the camera, and an edge shift width corresponding to a width of a wavelength band in which transmittance and reflectance change according to a change in wavelength in the dichroic mirror is wider than a full width at half maximum of a normal fluorescence spectrum of the light-emitting element.
Abstract:
A semiconductor device inspection method of inspecting a semiconductor device which is an inspection object includes: a step of inputting a stimulation signal to the semiconductor device; a step of acquiring a detection signal based on a reaction of the semiconductor device to which the stimulation signal has been input; a step of generating a first in-phase image and a first quadrature image including amplitude information and phase information in the detection signal based on the detection signal and a reference signal generated based on the stimulation signal; and a step of performing, a filtering process of reducing noise on at least one of the first in-phase image and the first quadrature image and then generating a first amplitude image based on the first in-phase image and the first quadrature image.
Abstract:
An image generating device is an apparatus for acquiring an image which shows a direction of an electric current flowing through a semiconductor device. The image generating device comprises a signal application unit configured to apply a stimulation signal to the semiconductor device, a magnetic detection unit configured to output a detection signal based on a magnetism generated by an application of the stimulation signal, and an image generation unit configured to generate phase image data comprising a phase component which indicates a phase difference based on the phase difference between the detection signal and a reference signal which is generated based on the stimulation signal and generate an electric current direction image which shows the direction of the electric current based on the phase image data.
Abstract:
An image generating device is an apparatus for acquiring an image which shows a direction of an electric current flowing through a semiconductor device. The image generating device comprises a signal application unit configured to apply a stimulation signal to the semiconductor device, a magnetic detection unit configured to output a detection signal based on a magnetism generated by an application of the stimulation signal, and an image generation unit configured to generate phase image data comprising a phase component which indicates a phase difference based on the phase difference between the detection signal and a reference signal which is generated based on the stimulation signal and generate an electric current direction image which shows the direction of the electric current based on the phase image data.
Abstract:
An inspection apparatus includes a tester unit that applies a stimulus signal to a semiconductor apparatus, an MO crystal arranged to face a semiconductor apparatus, a light source that outputs light, an optical scanner that irradiates the MO crystal with light output from light source, a light detector that detects light reflected from the MO crystal arranged to face the semiconductor apparatus D and outputs a detection signal, and a computer that generate phase image data based on a phase difference between a reference signal generated based on a stimulus signal and the detection signal, the phase image data including a phase component indicating the phase difference, and generates an image indicating a path of a current from the phase image data.
Abstract:
A semiconductor device testing apparatus 1A includes a tester unit 16 that generates an operational pulse signal, an optical sensor 10 that outputs a detection signal as a response to the operational pulse signal, a pulse generator 17 that generates a reference signal containing a plurality of harmonics for the operational pulse signal in synchronization with the operational pulse signal, a spectrum analyzer 13 that receives the detection signal and acquires a phase and amplitude of the detection signal at a detection frequency, a spectrum analyzer 14 that receives the reference signal and acquires a phase of the reference signal at a detection frequency, and an analysis control unit 18 that acquires a time waveform of the detection signal based on the phase and the amplitude of the detection signal acquired by the spectrum analyzer 13 and the phase of the reference signal. acquired by the spectrum analyzer 14.