公开(公告)号：US06310327B1

公开(公告)日：2001-10-30

申请号：US09642973

申请日：2000-08-18

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： F27D1102

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

摘要翻译： 一种新型的快速热处理（RTP）反应器使用单个或多个晶圆处理多个晶片或单个大晶片，例如200mm（8英寸），250mm（10英寸），300mm（12英寸） 双重热源。 晶片或晶片安装在由感受器支撑件支撑的可转动的基座上。 基座位置控制在处理期间旋转晶片，并且将基座升高并降低到用于加载和处理晶片的各种位置。 加热控制器控制单个热源或在加工期间将晶片加热至基本均匀的温度的双重热源。 气流控制器调节进入反应室的气体流。 代替第二热源，在一个实施例中，使用无源热分布来实现整个晶片的基本均匀的温度。 此外，使用包含石英包裹的碳化硅布的新颖感受器。

公开(公告)号：US5710407A

公开(公告)日：1998-01-20

申请号：US479889

申请日：1995-06-07

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

公开(公告)号：US6151447A

公开(公告)日：2000-11-21

申请号：US978348

申请日：1997-11-25

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

摘要翻译： 一种新型的快速热处理（RTP）反应器使用单个或多个晶圆处理多个晶片或单个大晶片，例如200mm（8英寸），250mm（10英寸），300mm（12英寸） 双重热源。 晶片或晶片安装在由感受器支撑件支撑的可转动的基座上。 基座位置控制在处理期间旋转晶片，并且将基座升高并降低到用于加载和处理晶片的各种位置。 加热控制器控制单个热源或在加工期间将晶片加热至基本均匀的温度的双重热源。 气流控制器调节进入反应室的气体流。 代替第二热源，在一个实施例中，使用无源热分布来实现整个晶片的基本均匀的温度。 此外，使用包含石英包裹的碳化硅布的新颖感受器。

公开(公告)号：US5683518A

公开(公告)日：1997-11-04

申请号：US185691

申请日：1994-01-21

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution element is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a wafer surround ring around the wafer and, in some embodiments, a spindle and/or a susceptor insert underneath the wafer.

摘要翻译： 一种新型的快速热处理（RTP）反应器使用单个或多个晶圆处理多个晶片或单个大晶片，例如200mm（8英寸），250mm（10英寸），300mm（12英寸） 双重热源。 晶片或晶片安装在由感受器支撑件支撑的可转动的基座上。 基座位置控制在处理期间旋转晶片，并且将基座升高并降低到用于加载和处理晶片的各种位置。 加热控制器控制单个热源或在加工期间将晶片加热至基本均匀的温度的双重热源。 气流控制器调节进入反应室的气体流。 代替第二热源，在一个实施例中，使用无源热分配元件来实现整个晶片的基本均匀的温度。 此外，使用新颖的感受器，其包括晶片周围的晶片环绕环，并且在一些实施例中，包括在晶片下方的心轴和/或基座插入物。

公开(公告)号：US08610033B1

公开(公告)日：2013-12-17

申请号：US11731207

申请日：2007-03-29

申请人： Gary M. Moore ,  Katsuhito Nishikawa ,  Steven C. Beese

发明人： Gary M. Moore ,  Katsuhito Nishikawa ,  Steven C. Beese

IPC分类号： F27B5/14 ,  H01L21/67 ,  F27B17/00

CPC分类号： H01L21/67109 ,  F27B17/0025 ,  H01L21/67115 ,  H01L21/6719

摘要： A rapid thermal process reactor includes a vessel having a dome assembly. The vessel bounds a reactor chamber for rapid thermal processing of one or more substrates. The dome assembly includes a low profile dome and a flange surrounding and abutting the low profile dome. The flange includes a top surface; a bottom surface, removed from and opposite the top surface; an outer circumferential edge surface connecting the top surface and the bottom surface; and an inner edge surface, opposite and removed from said outer circumferential edge, including a portion abutting said low profile dome. The rapid thermal process reactor also includes a radiant heat source; a gas ring mounted about a sidewall of the vessel; a gas ring shield mounted as part of the sidewall of the vessel; a clamp ring to clamp the dome assembly in place; and a clamp ring shield mounted on the clamp ring.

摘要翻译： 快速热处理反应器包括具有圆顶组件的容器。 容器界定了一个反应室，用于一个或多个基材的快速热处理。 圆顶组件包括一个低矮的圆顶和围绕和邻接低矮圆顶的凸缘。 凸缘包括顶面; 底表面，从顶表面移除并与顶表面相对; 连接顶表面和底表面的外周边表面; 以及与所述外周边缘相对且从所述外周边缘移除的内边缘表面，包括邻接所述低矮圆顶的部分。 快速热处理反应器还包括辐射热源; 围绕容器的侧壁安装的气环; 安装在容器侧壁的一部分上的气体环形屏蔽件; 夹紧环，将圆顶组件夹紧就位; 并安装在夹环上的夹环环形屏蔽。

公开(公告)号：US06428609B1

公开(公告)日：2002-08-06

申请号：US09658418

申请日：2000-09-08

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： B01D4508

CPC分类号： B01D45/08 ,  Y10S55/30

摘要： An exhaust gas particulate controller is included between an exhaust of a barrel chemical vapor deposition reactor and the gas scrubber system. The exhaust gas particulate controller is positioned as close to the exhaust of the reactor as is practical. The exhaust gas particulate controller is a passive system that prevents generation of particulates associated with gas density changes that occur during processing within the reactor.

摘要翻译： 排气微粒控制器包括在桶化学气相沉积反应器的排气口和气体洗涤器系统之间。 排气微粒控制器如实际那样定位成靠近反应器的排气口。 排气微粒控制器是一种被动系统，可防止与在反应器内处理过程中发生的气体密度变化相关的微粒产生。

公开(公告)号：US06347749B1

公开(公告)日：2002-02-19

申请号：US09500696

申请日：2000-02-09

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： B05B1700

CPC分类号： C23C16/45563 ,  C23C16/45589 ,  C30B25/14

摘要： A gas jet assembly includes a gas injector having a longitudinal axis, a first motor coupled to the gas injector and a second motor coupled to the gas injector. The first motor controls a position of the gas injector along the longitudinal axis of the gas injector. The second motor controls the angular position of the gas injector around the longitudinal axis of the gas injector.

摘要翻译： 气体喷射组件包括具有纵向轴线的气体喷射器，耦合到气体喷射器的第一马达和耦合到气体喷射器的第二马达。 第一马达控制气体喷射器沿着气体喷射器的纵向轴线的位置。 第二马达控制气体喷射器围绕气体喷射器的纵向轴线的角度位置。

公开(公告)号：US5444217A

公开(公告)日：1995-08-22

申请号：US7981

申请日：1993-01-21

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

公开(公告)号：US07794667B2

公开(公告)日：2010-09-14

申请号：US11254294

申请日：2005-10-19

申请人： Katsuhito Nishikawa ,  Gary M. Moore ,  Aaron David Ingles

发明人： Katsuhito Nishikawa ,  Gary M. Moore ,  Aaron David Ingles

IPC分类号： B01J19/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： C23C16/4412 ,  C23C16/4409 ,  C23C16/45504 ,  C23C16/45591

摘要： A process gas to a reactor volume of a semiconductor processing reactor is provided through gas injector ports of a gas ring. The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor to exhaust ports of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports.

摘要翻译： 通过气体环的气体注入口提供处理气体到半导体处理反应器的反应器体积。 工艺气体从气体喷射器端口水平地流过旋转基座的主表面到气体环的排气口。 废弃的工艺气体通过排气口从反应器体积中除去。

公开(公告)号：US06475284B1

公开(公告)日：2002-11-05

申请号：US09399115

申请日：1999-09-20

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C1600

CPC分类号： C30B25/14 ,  C23C16/45502 ,  C23C16/4558

摘要： A semiconductor processing system includes a reactor and a dispersion head within the reactor. During use, process gas is supplied to the dispersion head. The process gas flows through distributors of the dispersion head and into the reactor. The process gas contacts substrates in the reactor thus forming a layer on the substrate. Use of the dispersion head reduces and/or eliminates turbulence and recirculation in the flow of the process gas through the reactor. This results in the formation of layers on the substrates having excellent thickness uniformity. This also allows realization of an abrupt transition between layers formed on the substrates.

摘要翻译： 半导体处理系统包括反应器内的反应器和分散头。 在使用期间，将处理气体供应到分散头。 工艺气体流过分散头的分配器并进入反应器。 工艺气体与反应器中的衬底接触，从而在衬底上形成一层。 分散头的使用减少和/或消除了工艺气体流过反应器的紊流和再循环。 这导致在具有优异厚度均匀性的基板上形成层。 这也允许实现在衬底上形成的层之间的突然过渡。