公开(公告)号：US07794667B2

公开(公告)日：2010-09-14

申请号：US11254294

申请日：2005-10-19

申请人： Katsuhito Nishikawa ,  Gary M. Moore ,  Aaron David Ingles

发明人： Katsuhito Nishikawa ,  Gary M. Moore ,  Aaron David Ingles

IPC分类号： B01J19/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： C23C16/4412 ,  C23C16/4409 ,  C23C16/45504 ,  C23C16/45591

摘要： A process gas to a reactor volume of a semiconductor processing reactor is provided through gas injector ports of a gas ring. The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor to exhaust ports of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports.

摘要翻译： 通过气体环的气体注入口提供处理气体到半导体处理反应器的反应器体积。 工艺气体从气体喷射器端口水平地流过旋转基座的主表面到气体环的排气口。 废弃的工艺气体通过排气口从反应器体积中除去。