公开(公告)号：US06310327B1

公开(公告)日：2001-10-30

申请号：US09642973

申请日：2000-08-18

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： F27D1102

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

摘要翻译： 一种新型的快速热处理（RTP）反应器使用单个或多个晶圆处理多个晶片或单个大晶片，例如200mm（8英寸），250mm（10英寸），300mm（12英寸） 双重热源。 晶片或晶片安装在由感受器支撑件支撑的可转动的基座上。 基座位置控制在处理期间旋转晶片，并且将基座升高并降低到用于加载和处理晶片的各种位置。 加热控制器控制单个热源或在加工期间将晶片加热至基本均匀的温度的双重热源。 气流控制器调节进入反应室的气体流。 代替第二热源，在一个实施例中，使用无源热分布来实现整个晶片的基本均匀的温度。 此外，使用包含石英包裹的碳化硅布的新颖感受器。

公开(公告)号：US5601107A

公开(公告)日：1997-02-11

申请号：US444329

申请日：1995-05-18

申请人： Gary M. Moore ,  Richard S. Pairish

发明人： Gary M. Moore ,  Richard S. Pairish

IPC分类号： F17C13/04 ,  F17C13/12 ,  F23N5/24 ,  F16K17/36

CPC分类号： F23N5/24 ,  F17C13/04 ,  F17C13/123 ,  F17C2205/0111 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0391 ,  F17C2221/012 ,  F17C2227/044 ,  F17C2227/045 ,  F17C2250/0465 ,  F17C2250/0636 ,  F17C2260/038 ,  F17C2270/0518 ,  F23N2031/14 ,  F23N2031/18 ,  Y02E60/321 ,  Y10T137/0419 ,  Y10T137/048 ,  Y10T137/0753 ,  Y10T137/4245 ,  Y10T137/4252 ,  Y10T137/87201

摘要： A process gas supply system at the gas supply point includes an automated means for evacuating gas in a process line fed by the process gas supply system when an abnormal event occurs. The process gas supply system of this invention eliminates the need for any special valves or piping at the point of use of the process gas as well as the need for a return line from the point of use to the process gas supply system to purge the process line. A process gas is contained in a cylinder under pressure. The cylinder is coupled to a process line by the process gas supply system. The process gas supply system includes a gas flow controller and an automatic evacuation system. The gas flow controller controls the supply of the process gas from the cylinder to the process line. In an abnormal event, process gas flow from the cylinder is blocked by the gas flow controller and the automatic evacuation system evacuates the process gas not only from the gas flow controller, but also from the process line.

摘要翻译： 在气体供给点处的工艺气体供给系统包括用于在发生异常事件时由处理气体供应系统供给的处理线中排出气体的自动化装置。 本发明的工艺气体供应系统消除了在工艺气体的使用点处需要任何特殊的阀门或管道以及从使用点到工艺气体供应系统的返回管线的需要，以清除过程 线。 处理气体在压力下容纳在气缸中。 气缸通过工艺气体供应系统连接到工艺管线。 过程气体供应系统包括气体流量控制器和自动排空系统。 气体流量控制器控制从气缸到生产线的处理气体的供应。 在异常情况下，来自气缸的工艺气体流量被气体流量控制器阻挡，并且自动排气系统不仅从气体流量控制器排出处理气体，而且从处理管线排出处理气体。

公开(公告)号：US5580388A

公开(公告)日：1996-12-03

申请号：US453419

申请日：1995-05-30

申请人： Gary M. Moore

发明人： Gary M. Moore

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/6875 ,  H01L21/68757 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A multi layer RTP reactor susceptor includes a first layer which has a multiplicity of thin components that are preferably silicon carbide, graphite, or silicon carbide coated graphite with a thickness less than about 6 mm, with an emissivity such that the first layer radiates heat, and with thermal heat transfer characteristics such that the first layer facilitates maintaining a substrate or substrates supported by the susceptor at a uniform temperature, and facilitates maintaining uniform process gas characteristics over the substrates. A second layer of the susceptor is transparent to the heat source of the RTP reactor and provides a rigid, stable platform for the first layer.

摘要翻译： 多层RTP反应器基座包括第一层，其具有多个薄的部件，优选碳化硅，石墨或碳化硅涂层的石墨，其厚度小于约6mm，发射率使得第一层辐射热量， 并且具有热传递特性，使得第一层有助于在均匀的温度下维持由基座支撑的基底或基底，并且有助于在基底上保持均匀的工艺气体特性。 基座的第二层对于RTP反应器的热源是透明的，并为第一层提供了一个刚性稳定的平台。

公开(公告)号：US5417236A

公开(公告)日：1995-05-23

申请号：US109191

申请日：1993-08-19

申请人： Gary M. Moore ,  Richard S. Pairish

发明人： Gary M. Moore ,  Richard S. Pairish

IPC分类号： F17C13/04 ,  F17C13/12 ,  F23N5/24 ,  F16K17/36

CPC分类号： F23N5/24 ,  F17C13/04 ,  F17C13/123 ,  F17C2205/0111 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0391 ,  F17C2221/012 ,  F17C2227/044 ,  F17C2227/045 ,  F17C2250/0465 ,  F17C2250/0636 ,  F17C2260/038 ,  F17C2270/0518 ,  F23N2031/14 ,  F23N2031/18 ,  Y02E60/321 ,  Y10T137/0419 ,  Y10T137/048 ,  Y10T137/0753 ,  Y10T137/4245 ,  Y10T137/4252 ,  Y10T137/87201

摘要： A process gas supply system at the gas supply point includes an automated means for evacuating gas in a process line fed by the process gas supply system when an abnormal event occurs. The process gas supply system of this invention eliminates the need for any special valves or piping at the point of use of the process gas as well as the need for a return line from the point of use to the process gas supply system to purge the process line. A process gas is contained in a cylinder under pressure. The cylinder is coupled to a process line by the process gas supply system. The process gas supply system includes a gas flow controller and an automatic evacuation system. The gas flow controller controls the supply of the process gas from the cylinder to the process line. In an abnormal event, process gas flow from the cylinder is blocked by the gas flow controller and the automatic evacuation system evacuates the process gas not only from the gas flow controller, but also from the process line.

摘要翻译： 在气体供给点处的工艺气体供给系统包括用于在发生异常事件时由处理气体供应系统供给的处理线中排出气体的自动化装置。 本发明的工艺气体供应系统消除了在工艺气体的使用点处需要任何特殊的阀门或管道以及从使用点到工艺气体供应系统的返回管线的需要，以清除过程 线。 处理气体在压力下容纳在气缸中。 气缸通过工艺气体供应系统连接到工艺管线。 过程气体供应系统包括气体流量控制器和自动排空系统。 气体流量控制器控制从气缸到生产线的处理气体的供应。 在异常情况下，来自气缸的工艺气体流量被气体流量控制器阻挡，并且自动排气系统不仅从气体流量控制器排出处理气体，而且从处理管线排出处理气体。

公开(公告)号：US4823654A

公开(公告)日：1989-04-25

申请号：US154166

申请日：1988-02-08

申请人： Gary M. Moore

发明人： Gary M. Moore

IPC分类号： B25B9/00 ,  B25B33/00 ,  H01L21/683 ,  B25F1/00

CPC分类号： B25B9/00 ,  B25B33/00 ,  H01L21/6838 ,  Y10T29/53909

摘要： An IC-wafer handling tool comprising an aluminum handle, a detachable polyimid pointed end member and a detachable polyimid hook end member. The pointed end is used in cooperation with a vacuum pick to load wafers into susceptor pockets, and the hooked end is used in cooperation with a vacuum pick to unload wafers. During loading and unloading, the only contact with the front side of the wafer is at the edge of the wafer, which does not contain integrated circuit structure, thereby decreasing particulate contamination of the wafer and the associated IC structure on the wafer.

摘要翻译： 一种IC晶片处理工具，包括铝手柄，可拆卸的聚酰亚胺尖端部件和可拆卸的聚酰亚胺钩端部件。 尖端与真空拾取器配合使用以将晶片装载到基座袋中，并且钩形端与真空拾取器配合使用以卸载晶片。 在装载和卸载期间，与晶片正面的唯一接触处于晶片的边缘，其不包含集成电路结构，从而减少晶片上的颗粒污染和晶片上相关联的IC结构。

公开(公告)号：US06773749B1

公开(公告)日：2004-08-10

申请号：US09765919

申请日：2001-01-18

申请人： Gary M. Moore

发明人： Gary M. Moore

IPC分类号： C23C1600

CPC分类号： C23C16/45561 ,  C23C16/4412 ,  G05D11/132 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/87249

摘要： A method of controlling gas flow to a semiconductor processing reactor includes opening a first gas manifold inlet valve coupled between a first regulator and a gas manifold; regulating a flow rate of a flow of a first process gas through the first gas manifold inlet valve to the gas manifold with the first regulator; opening a second gas manifold inlet valve coupled between a second regulator and the gas manifold; and regulating a flow rate of a flow of a second process gas through the second gas manifold inlet valve to the gas manifold with the second regulator. The first process gas and the second process gas mix in the gas manifold.

摘要翻译： 控制到半导体处理反应器的气体流的方法包括：打开一个联接在第一调节器和气体歧管之间的第一气体歧管入口阀; 通过第一调节器将通过第一气体歧管入口阀的第一处理气体的流量调节到气体歧管; 打开连接在第二调节器和气体歧管之间的第二气体歧管入口阀; 以及通过所述第二调节器将通过所述第二气体歧管入口阀的第二处理气体的流量调节到所述气体歧管。 第一工艺气体和第二工艺气体在气体歧管中混合。

公开(公告)号：US6151447A

公开(公告)日：2000-11-21

申请号：US978348

申请日：1997-11-25

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

摘要翻译： 一种新型的快速热处理（RTP）反应器使用单个或多个晶圆处理多个晶片或单个大晶片，例如200mm（8英寸），250mm（10英寸），300mm（12英寸） 双重热源。 晶片或晶片安装在由感受器支撑件支撑的可转动的基座上。 基座位置控制在处理期间旋转晶片，并且将基座升高并降低到用于加载和处理晶片的各种位置。 加热控制器控制单个热源或在加工期间将晶片加热至基本均匀的温度的双重热源。 气流控制器调节进入反应室的气体流。 代替第二热源，在一个实施例中，使用无源热分布来实现整个晶片的基本均匀的温度。 此外，使用包含石英包裹的碳化硅布的新颖感受器。

公开(公告)号：US5683518A

公开(公告)日：1997-11-04

申请号：US185691

申请日：1994-01-21

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution element is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a wafer surround ring around the wafer and, in some embodiments, a spindle and/or a susceptor insert underneath the wafer.

摘要翻译： 一种新型的快速热处理（RTP）反应器使用单个或多个晶圆处理多个晶片或单个大晶片，例如200mm（8英寸），250mm（10英寸），300mm（12英寸） 双重热源。 晶片或晶片安装在由感受器支撑件支撑的可转动的基座上。 基座位置控制在处理期间旋转晶片，并且将基座升高并降低到用于加载和处理晶片的各种位置。 加热控制器控制单个热源或在加工期间将晶片加热至基本均匀的温度的双重热源。 气流控制器调节进入反应室的气体流。 代替第二热源，在一个实施例中，使用无源热分配元件来实现整个晶片的基本均匀的温度。 此外，使用新颖的感受器，其包括晶片周围的晶片环绕环，并且在一些实施例中，包括在晶片下方的心轴和/或基座插入物。

公开(公告)号：US08610033B1

公开(公告)日：2013-12-17

申请号：US11731207

申请日：2007-03-29

申请人： Gary M. Moore ,  Katsuhito Nishikawa ,  Steven C. Beese

发明人： Gary M. Moore ,  Katsuhito Nishikawa ,  Steven C. Beese

IPC分类号： F27B5/14 ,  H01L21/67 ,  F27B17/00

CPC分类号： H01L21/67109 ,  F27B17/0025 ,  H01L21/67115 ,  H01L21/6719

摘要： A rapid thermal process reactor includes a vessel having a dome assembly. The vessel bounds a reactor chamber for rapid thermal processing of one or more substrates. The dome assembly includes a low profile dome and a flange surrounding and abutting the low profile dome. The flange includes a top surface; a bottom surface, removed from and opposite the top surface; an outer circumferential edge surface connecting the top surface and the bottom surface; and an inner edge surface, opposite and removed from said outer circumferential edge, including a portion abutting said low profile dome. The rapid thermal process reactor also includes a radiant heat source; a gas ring mounted about a sidewall of the vessel; a gas ring shield mounted as part of the sidewall of the vessel; a clamp ring to clamp the dome assembly in place; and a clamp ring shield mounted on the clamp ring.

摘要翻译： 快速热处理反应器包括具有圆顶组件的容器。 容器界定了一个反应室，用于一个或多个基材的快速热处理。 圆顶组件包括一个低矮的圆顶和围绕和邻接低矮圆顶的凸缘。 凸缘包括顶面; 底表面，从顶表面移除并与顶表面相对; 连接顶表面和底表面的外周边表面; 以及与所述外周边缘相对且从所述外周边缘移除的内边缘表面，包括邻接所述低矮圆顶的部分。 快速热处理反应器还包括辐射热源; 围绕容器的侧壁安装的气环; 安装在容器侧壁的一部分上的气体环形屏蔽件; 夹紧环，将圆顶组件夹紧就位; 并安装在夹环上的夹环环形屏蔽。

公开(公告)号：US06428609B1

公开(公告)日：2002-08-06

申请号：US09658418

申请日：2000-09-08

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： B01D4508

CPC分类号： B01D45/08 ,  Y10S55/30

摘要： An exhaust gas particulate controller is included between an exhaust of a barrel chemical vapor deposition reactor and the gas scrubber system. The exhaust gas particulate controller is positioned as close to the exhaust of the reactor as is practical. The exhaust gas particulate controller is a passive system that prevents generation of particulates associated with gas density changes that occur during processing within the reactor.

摘要翻译： 排气微粒控制器包括在桶化学气相沉积反应器的排气口和气体洗涤器系统之间。 排气微粒控制器如实际那样定位成靠近反应器的排气口。 排气微粒控制器是一种被动系统，可防止与在反应器内处理过程中发生的气体密度变化相关的微粒产生。