公开(公告)号：US20080292430A1

公开(公告)日：2008-11-27

申请号：US12124455

申请日：2008-05-21

Applicant: Alexander PIECHULLA ,  Claus Rade ,  Robert Michael Hartung

Inventor： Alexander PIECHULLA ,  Claus Rade ,  Robert Michael Hartung

IPC: B66C17/08

CPC classification number: C30B31/16 ,  C30B31/10 ,  F27B17/0025 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67757

Abstract: A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by means of a collar, which is attached to the process tube and against which a door rests sealingly.

Abstract translation: 在处理管中用于在低压下掺杂，沉积或氧化半导体材料的装置设置有管闭合件以及用于供给和排出工艺气体并在工艺管中产生负压的装置。 相对于处理气体气密的处理室的封闭件和管封闭端的真空密封密封件相对于大气在空间上彼此分离，并且布置在处理管的同一侧 以使密封处理室的塞子的底部靠在处理管的密封边缘上并且管封闭端部通过套环被密封地密封，所述套环附接到处理管并且靠在其上 一个门密封地休息。

公开(公告)号：US20070231757A1

公开(公告)日：2007-10-04

申请号：US11277814

申请日：2006-03-29

Applicant: Anthony Dip ,  Eric Malstrom

Inventor： Anthony Dip ,  Eric Malstrom

IPC: F23C5/00

CPC classification number: H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

Abstract: A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system comprises a plurality of regulators, such as mass flow controllers, in a process gas manifold coupling a gas supply with a thermal processing furnace. The regulators establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold to the thermal processing furnace. The gas delivery system may be a component of the thermal processing furnace that further includes a liner that surrounds a processing space inside the thermal processing furnace.

Abstract translation: 一种用于将气体从气体供给到热处理炉的气体输送系统，配备有气体输送系统的热处理炉，以及将处理气体输送到热处理炉的方法。 气体输送系统包括多个调节器，例如质量流量控制器，其在将气体供应与热处理炉连接的工艺气体歧管中。 调节器以工艺气体歧管连接到热处理炉的多个流速建立相应的多个工艺气体流。 气体输送系统可以是热处理炉的组件，其还包括围绕热处理炉内的处理空间的衬套。

公开(公告)号：US20030038127A1

公开(公告)日：2003-02-27

申请号：US09938257

申请日：2001-08-23

Inventor： Yong Liu ,  Jeffrey P. Hebb ,  William Francis Drislane

IPC: F27B005/14

CPC classification number: C23C16/45542 ,  C23C16/45544 ,  C23C16/4557 ,  C23C16/45591 ,  C23C16/46 ,  C30B25/14 ,  C30B31/16 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719

Abstract: A method and apparatus for thermal processing of a workpiece is provided. The time taken for a processing gas to be purged, or switched, during one or more processing steps is significantly reduced for thermal processing systems. The thermal processing system includes a heating chamber in accordance with one example embodiment of the present invention. A small-volume workpiece enclosure is disposed about the workpiece. A translation mechanism, e.g., in the form of a positioning assembly, supports the small-volume workpiece enclosure for moving the small-volume workpiece enclosure and the workpiece within the heating chamber. The small-volume workpiece enclosure enables the use of relatively smaller amounts of process (ambient) gases, and decreases the purge time of such gases. The heating chamber can have at least one of a thermal radiation intensity gradient and a temperature gradient for thermally processing the workpiece. The heating chamber can have one or more heating elements disposed about the heating chamber.

Abstract translation: 提供了一种用于工件热处理的方法和装置。 在一个或多个处理步骤中处理气体被清除或切换所花费的时间对于热处理系统而言显着降低。 热处理系统包括根据本发明的一个示例性实施例的加热室。 围绕工件设置小体积的工件外壳。 平移机构，例如以定位组件的形式，支撑小体积工件外壳，用于在加热室内移动小体积工件外壳和工件。 小体积的工件外壳能够使用相对较少量的工艺（环境）气体，并减少这些气体的吹扫时间。 加热室可以具有用于热加工工件的热辐射强度梯度和温度梯度中的至少一个。 加热室可以具有围绕加热室设置的一个或多个加热元件。

公开(公告)号：US20020002951A1

公开(公告)日：2002-01-10

申请号：US09389716

申请日：1999-09-03

Inventor： VLADIMIR IVANOVICH KUZNETSOV

IPC: C23C016/00

CPC classification number: H01L21/67109 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  C30B31/12 ,  C30B31/16 ,  F27D11/02

Abstract: Heating installation for a reactor. The reactor is provided with gas feed openings and gas discharge openings opening into a treatment chamber for accommodating a wafer floating therein. By means of such a treatment a wafer can be heated and cooled relatively rapidly. During the actual treatment it is important that the gas is heated sufficiently and to this end a heating installation is present. The latter consists of heating means, such as electrical heating means, arranged in a body which adjoins the reactor and in which channels have been made which connect into the gas feed openings and through which the treatment gas or other gas is fed.

Abstract translation: 反应堆的加热设备。 反应器设置有气体供给开口和通向处理室的气体排出开口，用于容纳漂浮在其中的晶片。 通过这种处理，可以相对快速地加热和冷却晶片。 在实际处理中，重要的是，气体被充分加热，并且为此，存在加热装置。 后者包括设置在与反应器相邻的主体中的加热装置，例如电加热装置，其中已经制造了连接到气体供给开口的通道，并且通过该装置供给处理气体或其它气体。

公开(公告)号：US20010050052A1

公开(公告)日：2001-12-13

申请号：US09282489

申请日：1999-03-31

Inventor： TSUYOSHI MORIYAMA

IPC: H01L021/22 ,  C23C016/00

CPC classification number: H01L21/02238 ,  C30B31/16 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/31662

Abstract: In a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, a furnace tube port gas introducing pipe (9) for supplying gas to only one end portion of a furnace tube (2) is provided separately from a process gas introducing pipe (5) for supplying process gas into the furnace tube (2), and when wafers (4) are inserted into the furnace tube (2), an oxygen atmospheric layer (11) is formed only at the furnace tube port by oxygen gas or oxygen gas diluted with nitrogen gas which is supplied from the furnace tube port gas introducing pipe (9).

Abstract translation: 在半导体器件制造装置和半导体器件制造方法中，与处理气体导入管5分开设置用于向炉管（2）的仅一个端部供给气体的炉管口气体导入管（9） 用于将工艺气体供应到炉管（2）中，并且当晶片（4）插入炉管（2）中时，氧气气氛层（11）仅在炉管端口处由氧气或氧气稀释 与从炉管气体导入管（9）供给的氮气混合。

公开(公告)号：US5902103A

公开(公告)日：1999-05-11

申请号：US771976

申请日：1996-12-23

Applicant: Kiyohiko Maeda ,  Satoshi Kakizaki ,  Tomoshi Taniyama ,  Hidehiro Yanagawa ,  Ken-ichi Suzaki

Inventor： Kiyohiko Maeda ,  Satoshi Kakizaki ,  Tomoshi Taniyama ,  Hidehiro Yanagawa ,  Ken-ichi Suzaki

IPC: H01L21/22 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B31/16 ,  H01L21/00 ,  F27D5/00

CPC classification number: H01L21/67098 ,  C23C16/455 ,  C23C16/45591 ,  C30B25/14 ,  C30B31/16

Abstract: A vertical furnace for use in a semiconductor manufacturing apparatus, which comprises a heater, an outer tube, an inner tube, all being disposed concentrically in a multi-layered fashion, a boat adapted to be introduced into the inner tube with a wafer loaded thereon, and a boat cover disposed internally of the inner tube concentrically therewith. The boat cover is comprised of a boat cover body and an auxiliary cover plate connected to said boat cover body with a given gap therebetween, the boat cover body having a predetermined number of slit apertures extending in a generator direction thereof, the auxiliary cover plate being disposed to cover the slit apertures. The introduced reactive gas flows in branched streams, one flowing through the inside of the boat cover and the other flowing in past the boat cover, whereby the film deposited on the wafer is improved in uniformity and homogeneity. Further, since the boat cover is provided on the inner tube in the form of a unitary body, adjustments relative thereto can be made easily, thus improving the efficiency of the maintenance works thereof.

Abstract translation: 一种用于半导体制造装置的垂直炉，其包括加热器，外管，内管，全部以多层方式同心设置，适于在其上装载有晶片的情况下引入内管中的船 以及与其同心地配置在内管的内部的船盖。 船盖由船盖体和辅助盖板组成，辅助盖板在其间具有给定的间隙连接到船盖体，船盖主体具有沿其发电机方向延伸的预定数量的狭缝孔，辅助盖板为 设置成覆盖狭缝孔。 引入的反应气体以分支流流动，一个流经船盖的内部，另一个流过船盖，由此沉积在晶片上的膜的均匀性和均匀性得到改善。 此外，由于舟形盖以单体形式设置在内管上，因此可以容易地进行相对于其的调节，从而提高其维护工作的效率。

公开(公告)号：US5567149A

公开(公告)日：1996-10-22

申请号：US355571

申请日：1994-12-14

Applicant: Richard R. Hansotte, Jr. ,  Dieter K. Neff ,  Dennis A. Rock ,  Jeffrey A. Walker ,  Roland M. Wanser

Inventor： Richard R. Hansotte, Jr. ,  Dieter K. Neff ,  Dennis A. Rock ,  Jeffrey A. Walker ,  Roland M. Wanser

IPC: C30B31/16 ,  C30B33/00 ,  F27D17/00 ,  F27D5/00

CPC classification number: F27D17/001 ,  C30B31/16 ,  C30B33/00 ,  C30B33/005

Abstract: An exhaust system for use with a high temperature furnace used to perform oxidation and/or annealing operations of the type used in semiconductor fabrication. The exhaust system is designed to permit the furnace to be used with a controlled environment chamber surrounding the entry to the process chamber of the furnace. The exhaust system allows a relatively high velocity flow of exhaust gas from the process chamber through the exhaust system to occur when a positive pressure (e.g., annealing) operations are performed. Such high velocity flow prevents (a) backstreaming and (b) the accumulation of non-uniform concentrations of exhaust gases in the exhaust system, thereby permitting the accurate monitoring of the concentration of a selected gas in the exhaust system. Based on such monitoring, the opening of the door to the process chamber of the furnace may be prevented when the concentration of the selected gas exceeds a predetermined level. Preferably, all portions of the exhaust system potentially exposed to process chamber gases are made from quartz.

公开(公告)号：US5405446A

公开(公告)日：1995-04-11

申请号：US272486

申请日：1994-07-11

Applicant: Toshihiro Nakajima ,  Takatoshi Chiba ,  Kiyofumi Nishii ,  Toru Sato

Inventor： Toshihiro Nakajima ,  Takatoshi Chiba ,  Kiyofumi Nishii ,  Toru Sato

IPC: H01L21/26 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B31/16 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/31 ,  H01L21/324 ,  C23C16/00

CPC classification number: C23C16/45504 ,  C23C16/45512 ,  C23C16/4558 ,  C30B25/14 ,  C30B31/16 ,  H01L21/67109

Abstract: An apparatus for heat processing a substrate includes a heat processing furnace, which has a flat inner space for accommodating the substrate, and a gas introduction unit which introduces gas supplied via a piping into the inner space of the heat processing furnace via a gas supply inlet of the heat processing furnace. The apparatus effects the heat processing on the substrate placed within a gas flow formed in the inner space. The gas introduction unit includes a first gas introduction chamber, which receives the gas supplied via the piping for reducing a flow velocity of the gas, and a second gas introduction chamber, which is in communication with the first gas introduction chamber, is formed over at least one of outer surfaces of the top furnace wall and the bottom furnace wall at the one end of the heat processing furnace, and extends in a belt-like form through an entire width of the heat processing furnace. A portion of the top furnace wall and/or bottom furnace wall, over which the second gas introduction chamber is formed, has a nozzle opening, which covers the entire width of the heat processing furnace for flowing the gas from the second gas introduction chamber into the inner space in a direction perpendicular to the top furnace wall and/or bottom furnace wall. The gas supply port and the first gas introduction chamber are preferably separated from each other by a partition which forms a portion of a cylindrical or spherical surface and has a plurality of through-holes.

Abstract translation: 一种用于加热基板的设备包括：热处理炉，其具有用于容纳基板的平坦内部空间;以及气体引入单元，其经由管道供给的气体经由气体供给入口引入到热处理炉的内部空间 的热处理炉。 该装置对放置在内部空间中形成的气流内的基板进行热处理。 气体引入单元包括：第一气体导入室，其接收经由管道供给的气体，用于降低气体的流速;以及与第一气体导入室连通的第二气体导入室，形成在 在热处理炉的一端的顶炉壁和底炉壁的至少一个外表面，并且以带状形式延伸通过热处理炉的整个宽度。 顶部炉壁和/或底部炉壁的形成有第二气体导入室的部分具有喷嘴开口，该喷嘴开口覆盖用于使气体从第二气体导入室流出的热处理炉的整个宽度进入 在垂直于顶部炉壁和/或底部炉壁的方向上的内部空间。 气体供给口和第一气体导入室优选通过形成圆筒状或球面的一部分并具有多个通孔的隔壁相互分离。

公开(公告)号：US5273424A

公开(公告)日：1993-12-28

申请号：US928096

申请日：1992-08-13

Applicant: Jun-ichi Kobayashi

Inventor： Jun-ichi Kobayashi

IPC: C30B31/16 ,  C30B33/00 ,  C30B35/00 ,  F27D3/12

CPC classification number: C30B33/00 ,  C30B31/16 ,  C30B35/00

Abstract: A vertical heat treatment apparatus has a reaction furnace, gas-introducing mechanism, a gas-exhausting mechanism, and temperature-sensing means. The reaction furnace is made up of a reaction tube and a heating mechanism. The reaction tube contains a plurality of objects which are to be treated and which are arranged at predetermined intervals. The heating mechanism is arranged outside of the reaction tube. The gas-introducing means introduces a gas into the reaction tube, and the gas-exhausting mechanism exhausts the gas from the reaction tube. The temperature-sensing mechanism includes a guide pipe which passes through the side wall of the reaction tube and which extends along the inner wall of the reaction tube in the longitudinal direction of the reaction tube. One end of the guide pipe is closed and is located inside the reaction tube, while the other end thereof is open and is located outside of the reaction tube. A bendable temperature-measuring device is inserted in the guide pipe. With this structure, the vertical heat treatment apparatus can perform treatment while simultaneously measuring the temperature in the interior of the reaction tube.

Abstract translation: 立式热处理装置具有反应炉，气体引入机构，排气机构和温度检测装置。 反应炉由反应管和加热机构构成。 反应管包含待处理的多个物体，并且以预定间隔布置。 加热机构设置在反应管的外部。 气体导入装置将气体引入反应管，排气机构从反应管排出气体。 温度检测机构包括导管，其穿过反应管的侧壁，并沿反应管的内壁在反应管的纵向延伸。 引导管的一端封闭，位于反应管的内侧，另一端开放，位于反应管的外侧。 可弯曲的温度测量装置插入导管中。 利用这种结构，垂直热处理装置可以同时测量反应管内部的温度进行处理。

公开(公告)号：US5174825A

公开(公告)日：1992-12-29

申请号：US571950

申请日：1990-08-23

Applicant: Daniel White, Jr. ,  Mary E. Weber

Inventor： Daniel White, Jr. ,  Mary E. Weber

IPC: C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B31/16

CPC classification number: C23C16/45504 ,  C23C16/45582 ,  C23C16/45591 ,  C30B25/14 ,  C30B31/16

Abstract: A gas distribution system 140 includes a gas distribution chamber 142 and a gas distributor 154. Gas distribution chamber 142 includes an open end 144 and a closed end 146. A workpiece 148 is disposed adjacent closed end 146. Gas distributor 154 includes an outer collar 156 and an inner collar 158. Inner collar 158 has a continuously increasing cross-sectional diameter from a first predetermined point 160 to a second predetermined point 162. Gases are introduced through an inlet tube 150 disposed through an aperture in a platform 152 into the interior of inner collar 158 and toward workpiece 148. A diverter 164 diverts incoming gases from inlet tube 150.

Abstract translation: 气体分配系统140包括气体分配室142和气体分配器154.气体分配室142包括开放端144和封闭端146.工件148邻近封闭端146设置。气体分配器154包括外部轴环156 内轴环158具有从第一预定点160到第二预定点162的连续增加的截面直径。气体通过设置在平台152中的孔的入口管150引入到 内轴环158并朝向工件148.分流器164将进入的气体从入口管150转移。