公开(公告)号：US20080008460A1

公开(公告)日：2008-01-10

申请号：US11370095

申请日：2006-03-07

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： F26B19/00

CPC分类号： H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  F27B17/0025 ,  G02B5/124

摘要： An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

公开(公告)号：US20060289434A1

公开(公告)日：2006-12-28

申请号：US11496901

申请日：2006-08-01

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： F27B5/14 ,  F27D11/00

CPC分类号： H01L21/67248 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67115

摘要： A method and apparatus for heating semiconductor wafers in thermal processing chambers is disclosed. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

摘要翻译： 公开了一种在热处理室中加热半导体晶片的方法和装置。 该装置包括非接触式温度测量系统，其利用诸如高温计的辐射传感装置来确定处理期间晶片的温度。 辐射感测装置通过监测晶片在特定波长处发射的辐射量来确定晶片的温度。 根据本发明，在用于过滤由用于在辐射感测装置工作的波长处加热晶片的灯发出的光的装置中包括光谱滤波器。 光谱滤光器包括诸如稀土元素的光吸收剂，稀土元素的氧化物，光吸收染料，金属或半导体材料。

公开(公告)号：US20050236395A1

公开(公告)日：2005-10-27

申请号：US11137653

申请日：2005-05-25

申请人： Paul Timans ,  Narasimha Acharva

发明人： Paul Timans ,  Narasimha Acharva

IPC分类号： H05B3/00 ,  C30B31/12 ,  F27D11/02 ,  H01L21/00 ,  H01L21/26 ,  H01L21/268 ,  H05B1/02 ,  H05B3/68

CPC分类号： H01L21/67248 ,  C30B31/12 ,  H01L21/67115 ,  Y10S438/928

摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

公开(公告)号：US20060291833A1

公开(公告)日：2006-12-28

申请号：US11441810

申请日：2006-05-26

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： A21B2/00 ,  F26B19/00

CPC分类号： H01L21/67115 ,  H01L21/67248

摘要： A method and apparatus for heating substrates, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a thermal processing chamber includes at least one reflector. The reflector has a reflectivity that changes in response to either temperature, intensity of electromagnetic radiation incident on the reflector, or spectrum of electromagnetic radiation incident on the reflector. In this manner, the reflectivity of the reflector can be controlled during thermal processing. In this manner, the temperature of the substrate being heated can be controlled or otherwise altered.

摘要翻译： 公开了一种用于加热衬底的方法和装置，例如半导体晶片。 根据本公开，热处理室包括至少一个反射器。 反射器具有响应于温度，入射到反射器上的电磁辐射的强度或入射在反射器上的电磁辐射的频谱而改变的反射率。 以这种方式，可以在热处理期间控制反射器的反射率。 以这种方式，可以控制或改变正在加热的基板的温度。

公开(公告)号：US20070131671A1

公开(公告)日：2007-06-14

申请号：US11506174

申请日：2006-08-16

申请人： Paul Timans ,  Daniel Devine ,  Young Lee ,  Yao Hu ,  Peter Bordiga

发明人： Paul Timans ,  Daniel Devine ,  Young Lee ,  Yao Hu ,  Peter Bordiga

IPC分类号： F27D11/00

CPC分类号： H01L21/67115 ,  F27B17/0025

摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

摘要翻译： 描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。 在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。 室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的处理对象辐射能。 通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。 可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。

公开(公告)号：US20050098552A1

公开(公告)日：2005-05-12

申请号：US11020806

申请日：2004-12-22

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： H01L21/00 ,  F27B5/14

CPC分类号： H01L21/67248 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67115

摘要： A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

摘要翻译： 一种用于在热处理室中加热半导体晶片的方法和装置。 该装置包括非接触式温度测量系统，其利用诸如高温计的辐射传感装置来确定处理期间晶片的温度。 辐射感测装置通过监测晶片在特定波长处发射的辐射量来确定晶片的温度。 根据本发明，在用于过滤由用于在辐射感测装置工作的波长处加热晶片的灯发出的光的装置中包括光谱滤波器。 光谱滤光器包括诸如稀土元素的光吸收剂，稀土元素的氧化物，光吸收染料，金属或半导体材料。

公开(公告)号：US20080069550A1

公开(公告)日：2008-03-20

申请号：US11943452

申请日：2007-11-20

申请人： Paul Timans ,  Narasimha Acharya

发明人： Paul Timans ,  Narasimha Acharya

IPC分类号： F26B3/30 ,  H05B1/02

CPC分类号： H01L21/67248 ,  C30B31/12 ,  H01L21/67115 ,  Y10S438/928

摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

摘要翻译： 用于加热诸如半导体衬底的物体的脉冲处理方法和系统具有用于单个衬底的多脉冲处理的过程控制，或者具有不同物理性质的不同衬底的单脉冲或多脉冲处理。 在背景加热模式期间，热量以可控的方式施加到物体，由此在背景加热期间选择性地加热物体以至少大体上产生整个物体的温度升高。 物体的第一表面以脉冲加热方式被加热至少经受第一脉冲能量。 背景加热以与第一脉冲的定时关系来控制。 物体对第一能量脉冲的第一温度响应可以被感测并用于建立用于至少第二能量脉冲至少部分地产生目标条件的至少第二组脉冲参数。

公开(公告)号：US20080050688A1

公开(公告)日：2008-02-28

申请号：US11931452

申请日：2007-10-31

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： F27D23/00

CPC分类号： H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  F27B17/0025 ,  G02B5/124

摘要： An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

摘要翻译： 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US20070020784A1

公开(公告)日：2007-01-25

申请号：US11478342

申请日：2006-06-29

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： H01L21/66

CPC分类号： H01L21/67115 ,  G01J5/0003 ,  G01N21/55 ,  H01L21/67248 ,  H01L22/24

摘要： A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.

摘要翻译： 公开了一种用于确定诸如半导体晶片的衬底的至少一种光学特性的方法和系统。 一旦确定了光学特性，则可以控制处理室中的至少一个参数以改善处理。 例如，在一个实施例中，可以首先在环境温度或接近环境温度下确定衬底的一个表面的反射率。 根据该信息，可以准确地估计在高温处理期间晶片的反射率和/或发射率。 在晶片处理过程中，发射率可用于使用高温计校正温度测量。 除了进行更准确的温度测量之外，基板的光学特性也可用于更好地优化加热循环。

公开(公告)号：US20060289433A1

公开(公告)日：2006-12-28

申请号：US11443464

申请日：2006-05-30

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： F27B5/14 ,  F27D11/00

CPC分类号： H01L21/67115 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67109

摘要： An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.

摘要翻译： 公开了一种在脉冲加热过程中优化热预算的方法。 散热器或热转印板被配置和定位在经受热处理的诸如半导体晶片的物体附近。 散热器被配置为增强从物体的热传递速率，使得物体在能量脉冲之后迅速从峰值温度降低。 高导热材料可以位于板和物体之间。 板可以包括突起，肋，孔，凹槽和其它不连续性，以增强热传递并且避免在热循环期间对物体的物理损伤。 此外，可以选择板的光学性质以允许通过来自板的能量测量进行温度测量，或者为能量脉冲提供不同的热响应。 该板还可以允许对晶片进行预热或主动冷却。