发明申请
US20080050688A1 System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy 有权
通过优化电磁能的吸收来加热半导体晶片的系统和工艺

  • 专利标题: System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy
  • 专利标题(中): 通过优化电磁能的吸收来加热半导体晶片的系统和工艺
  • 申请号: US11931452
    申请日: 2007-10-31
  • 公开(公告)号: US20080050688A1
    公开(公告)日: 2008-02-28
  • 发明人: Paul Timans
  • 申请人: Paul Timans
  • 申请人地址: US CA Fremont 94538
  • 专利权人: Mattson Technology, Inc.
  • 当前专利权人: Mattson Technology, Inc.
  • 当前专利权人地址: US CA Fremont 94538
  • 主分类号: F27D23/00
  • IPC分类号: F27D23/00
System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy
摘要:
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
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