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    Furnace sidewall temperature control system
    1.
    发明授权
    Furnace sidewall temperature control system 失效
    炉侧壁温度控制系统

    公开(公告)号：US5900177A

    公开(公告)日：1999-05-04

    申请号：US873351

    申请日：1997-06-11

    Applicant: George T. Lecouras ,  Dennis P. Rodier

    Inventor： George T. Lecouras ,  Dennis P. Rodier

    IPC: H01L21/22 ,  C30B25/10 ,  C30B31/12 ,  G05D23/00 ,  G05D23/19 ,  G05D23/22 ,  H01L21/00 ,  H05B1/02

    CPC classification number: H01L21/67115 ,  C30B25/10 ,  C30B31/12

    Abstract: A vertical rapid thermal processing (RTP) system (10) is provided, comprising a vertical process chamber (20) extending along a longitudinal axis (X), and a movable platform (32) disposed within the process chamber and having a support surface upon which one or more substrates such as semiconductor wafers (W) may be mounted for processing. A temperature control subsystem (56, 58, 60) establishes a continuous temperature gradient within the vertical process chamber along the longitudinal axis. The temperature control subsystem comprises a plurality of chamber sidewall heating elements (24) located at different vertical positions along the longitudinal axis. Each of the plurality of heating elements is controlled independently of the other of the plurality of heating elements. The plurality of longitudinally oriented heating elements provides an active sidewall heating mechanism which results in a consistent and continuous temperature gradient within the chamber, independent of the position of the wafer within the chamber or the number of wafers which have been processed.

    Abstract translation: 提供了垂直快速热处理（RTP）系统（10），其包括沿着纵向轴线（X）延伸的垂直处理室（20）和设置在处理室内的可移动平台（32），并且具有支撑表面 可以安装一个或多个衬底，例如半导体晶片（W）用于处理。 温度控制子系统（56,58,60）沿着纵向轴线在垂直处理室内建立连续的温度梯度。 温度控制子系统包括沿着纵向轴线位于不同垂直位置的多个室侧壁加热元件（24）。 多个加热元件中的每一个独立于多个加热元件中的另一个加以控制。 多个纵向取向的加热元件提供主动侧壁加热机构，其导致腔室内的一致且连续的温度梯度，与晶片在腔室内的位置或已经被处理的晶片数量无关。

    Gallium ION Source and Materials Therefore
    2.
    发明申请
    Gallium ION Source and Materials Therefore 有权
    因此，镓离子源和材料

    公开(公告)号：US20130313971A1

    公开(公告)日：2013-11-28

    申请号：US13477253

    申请日：2012-05-22

    Applicant: Costel Biloiu ,  Craig R. Chaney ,  Neil J. Bassom ,  Benjamin Colombeau ,  Dennis P. Rodier

    Inventor： Costel Biloiu ,  Craig R. Chaney ,  Neil J. Bassom ,  Benjamin Colombeau ,  Dennis P. Rodier

    IPC: H01J27/20

    CPC classification number: H01J27/20 ,  H01J7/24 ,  H01J37/02 ,  H01J37/08

    Abstract: In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.

    Abstract translation: 在一个实施方案中，用于产生具有镓离子的离子束的方法包括在等离子体室中提供镓化合物靶的至少一部分，所述镓化合物靶包含镓和至少一个附加元素。 该方法还包括使用至少一种气态物质在等离子体室中引发等离子体，并提供气态蚀刻剂物质源以与镓化合物靶反应以形成挥发性镓物质。

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