发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
- 专利标题(中): 半导体器件及其生产方法
-
申请号: US14144111申请日: 2013-12-30
-
公开(公告)号: US20140110740A1公开(公告)日: 2014-04-24
- 发明人: Masafumi KURAMOTO , Satoru OGAWA , Miki NIWA
- 申请人: Nichia Corporation
- 申请人地址: JP Anan-shi
- 专利权人: Nichia Corporation
- 当前专利权人: Nichia Corporation
- 当前专利权人地址: JP Anan-shi
- 优先权: JP2009-013713 20090123
- 主分类号: H01L33/62
- IPC分类号: H01L33/62 ; H01L33/44
摘要:
An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.
公开/授权文献
- US09018664B2 Semiconductor device and production method therefor 公开/授权日:2015-04-28
信息查询
IPC分类: