公开(公告)号：US11961723B2

公开(公告)日：2024-04-16

申请号：US16222662

申请日：2018-12-17

申请人： APPLIED MATERIALS, INC.

发明人： David Gunther ,  Cheng-Hsiung Tsai ,  Kirankumar Neelasandra Savandaiah

IPC分类号： H01J37/34 ,  C23C14/50 ,  C23C14/56 ,  C23C16/458 ,  H01J37/32

CPC分类号： H01J37/3441 ,  C23C14/50 ,  C23C14/564 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32651 ,  H01J37/32724 ,  H01J37/3411

摘要： Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

公开(公告)号：US20180151337A1

公开(公告)日：2018-05-31

申请号：US15818169

申请日：2017-11-20

申请人： APPLIED MATERIALS, INC.

发明人： THANH X. NGUYEN ,  WEIMIN ZENG ,  YONG CAO

IPC分类号： H01J37/34 ,  H01L21/02

CPC分类号： H01J37/3441 ,  H01J37/3438 ,  H01J37/3488 ,  H01L21/02266

摘要： Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

公开(公告)号：US09966241B2

公开(公告)日：2018-05-08

申请号：US14878567

申请日：2015-10-08

申请人： CANON ANELVA CORPORATION

发明人： Shigenori Ishihara

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/56 ,  C23C14/35

CPC分类号： H01J37/3441 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/352 ,  C23C14/564 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447

摘要： A sputtering apparatus includes a shutter arranged having a first surface on a side of a substrate holder and a second surface on the opposite side, a first shield having a third surface including a portion facing the second surface and a fourth surface on the opposite side, a second shield having a fifth surface including a portion facing end portions of the shutter and the first shield, and a gas supply unit supplying a gas into a space arranged outside the first shield to communicate with a first gap between the second surface of the shutter and the third surface of the first shield. The second shield includes a protruding portion on the fifth surface to form a second gap between the protruding portion and the end portion of the shutter.

公开(公告)号：US09953812B2

公开(公告)日：2018-04-24

申请号：US15287675

申请日：2016-10-06

申请人： APPLIED MATERIALS, INC.

发明人： William Johanson ,  Kirankumar Savandaiah ,  Xin Wang ,  Prashant Prabhu

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/56

CPC分类号： H01J37/3441 ,  C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32642 ,  H01J37/32651

摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

公开(公告)号：US09812302B2

公开(公告)日：2017-11-07

申请号：US12531515

申请日：2008-03-14

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： H01J37/32 ,  H01J37/34 ,  C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/32495 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/345 ,  H01J37/3452

摘要： In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, it is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and the substrate is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

公开(公告)号：US20170154758A1

公开(公告)日：2017-06-01

申请号：US15310047

申请日：2014-11-27

申请人： BEIJING NMC CO., LTD.

发明人： Yanzhao ZHANG ,  Qing SHE ,  Peng CHEN

IPC分类号： H01J37/34 ,  H01L21/285 ,  H01J37/32 ,  C23C14/35 ,  C23C14/14

CPC分类号： H01J37/3441 ,  C23C14/14 ,  C23C14/35 ,  C23C14/564 ,  H01J37/32651 ,  H01J37/3405 ,  H01L21/00 ,  H01L21/2855

摘要： A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction. The reaction chamber and the semiconductor processing device can not only avoid or reduce the risk of sparking, but also reduce the pollution of the reaction chamber caused by the flaking off of metal particles; and in addition, it is possible to increase an inner diameter and an available space of the reaction chamber.

公开(公告)号：US20170053784A1

公开(公告)日：2017-02-23

申请号：US15240927

申请日：2016-08-18

申请人： APPLIED MATERIALS, INC.

发明人： Anantha K. SUBRAMANI ,  Hanbing WU ,  Wei W. WANG ,  Ashish GOEL ,  Srinivas GUGGILLA ,  Lavinia NISTOR

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3417 ,  C23C14/3464 ,  C23C14/564 ,  H01J37/32871 ,  H01J37/3429 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3464 ,  H01J37/3485

摘要： Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

摘要翻译： 本文提供了用于共溅射多个靶材料的方法和装置的实施例。 在一些实施例中，包括用于支撑衬底的衬底支撑件的处理室; 耦合到载体并且具有相应的多个靶以溅射到所述衬底上的多个阴极; 以及耦合到所述载体并在所述多个靶的相邻对之间延伸的过程屏蔽。

公开(公告)号：US09373485B2

公开(公告)日：2016-06-21

申请号：US14618416

申请日：2015-02-10

申请人： Applied Materials, Inc.

发明人： John C. Forster ,  Xianmin Tang

IPC分类号： B23K31/02 ,  H01J37/34 ,  C23C14/34 ,  B23K1/00

CPC分类号： H01J37/3491 ,  B23K1/0008 ,  B23K31/02 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3441 ,  H01J2237/332 ,  Y10T29/49826 ,  Y10T29/49947

摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

公开(公告)号：US20160071708A1

公开(公告)日：2016-03-10

申请号：US14941897

申请日：2015-11-16

申请人： Boris L. Druz ,  Piero Sferlazzo ,  Roger P. Fremgen ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss

发明人： Boris L. Druz ,  Piero Sferlazzo ,  Roger P. Fremgen ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/46

CPC分类号： H01J37/3488 ,  C23C14/044 ,  C23C14/221 ,  C23C14/46 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01J37/32752 ,  H01J37/3441 ,  H01J37/3476 ,  H01J2237/0245 ,  H01J2237/045 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/30472 ,  H01J2237/3146

摘要： Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.

摘要翻译： 用能量粒子束处理衬底的方法和设备。 衬底上的特征相对于能量粒子束定向，并且通过能量粒子束扫描衬底。 衬底围绕其方位角对称轴周期性地被索引，同时被屏蔽以防止暴露于能量粒子束，以相对于束的主要尺寸重新定向特征。

公开(公告)号：US09194038B2

公开(公告)日：2015-11-24

申请号：US12974245

申请日：2010-12-21

申请人： Akihiro Egami ,  Toshikazu Nakazawa ,  Katsuhiro Suzuki ,  Shinya Hasegawa

发明人： Akihiro Egami ,  Toshikazu Nakazawa ,  Katsuhiro Suzuki ,  Shinya Hasegawa

IPC分类号： C23C14/00 ,  C23C14/34 ,  C23C14/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/564 ,  C23C14/0036 ,  C23C14/34 ,  C23C16/4401 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/026 ,  H01J2237/0268

摘要： The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield.

摘要翻译： 本发明人进行了测试，发现为了防止粘附膜的剥离，将曲率半径设定为等于或大于预定阈值不是重要的。 本发明的发明人还发现，粘合膜的剥离发生在屏蔽的曲率变化的区域中，并且当屏蔽的曲率变化小时不太可能发生。 因此，问题的关键在于屏蔽体的曲率变化的大小，因此逐渐改变曲率使得可以抑制曲率的大的变化，从而防止粘附膜的剥离没有任何缺点 例如由于屏蔽件的尺寸增加而可能发生的膜厚分布的劣化。