公开(公告)号：US09978570B2

公开(公告)日：2018-05-22

申请号：US15310047

申请日：2014-11-27

申请人： BEIJING NMC CO., LTD.

发明人： Yanzhao Zhang ,  Qing She ,  Peng Chen

IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C14/14 ,  H01J37/32 ,  H01L21/285

CPC分类号： H01J37/3441 ,  C23C14/14 ,  C23C14/35 ,  C23C14/564 ,  H01J37/32651 ,  H01J37/3405 ,  H01L21/00 ,  H01L21/2855

摘要： A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction. The reaction chamber and the semiconductor processing device can not only avoid or reduce the risk of sparking, but also reduce the pollution of the reaction chamber caused by the flaking off of metal particles; and in addition, it is possible to increase an inner diameter and an available space of the reaction chamber.

公开(公告)号：US20160322243A1

公开(公告)日：2016-11-03

申请号：US15109281

申请日：2014-12-12

申请人： BEIJING NMC CO., LTD.

发明人： Xuewei WU

IPC分类号： H01L21/67 ,  B08B7/00

CPC分类号： H01L21/67109 ,  B08B7/0071 ,  H01L21/67126 ,  H01L21/6719

摘要： Embodiments of the invention provide a chamber for semiconductor processing, which includes a chamber body and an isolation window, the chamber body being of a tubby structure and having an upper end which is an open end, and the isolation window being arranged at the open end of the chamber body and used for sealing the chamber. The chamber further includes an isolation window fixing structure used for fixing the isolation window at the open end of the chamber body and a first fixing part and a second fixing part connected with each other, the first fixing part being fixedly connected with an edge area of an upper surface of the isolation window, and the second fixing part being fixedly connected with the chamber body.

摘要翻译： 本发明的实施例提供了一种用于半导体处理的腔室，其包括腔室主体和隔离窗口，腔室主体为桶式结构，并且具有作为开口端的上端，隔离窗口布置在开口端 并用于密封腔室。 所述室还包括用于将所述隔离窗固定在所述室主体的开口端处的隔离窗固定结构以及彼此连接的第一固定部和第二固定部，所述第一固定部与所述隔室窗的边缘区域 隔离窗的上表面，第二固定部分与腔体固定连接。

公开(公告)号：US20170154758A1

公开(公告)日：2017-06-01

申请号：US15310047

申请日：2014-11-27

申请人： BEIJING NMC CO., LTD.

发明人： Yanzhao ZHANG ,  Qing SHE ,  Peng CHEN

IPC分类号： H01J37/34 ,  H01L21/285 ,  H01J37/32 ,  C23C14/35 ,  C23C14/14

CPC分类号： H01J37/3441 ,  C23C14/14 ,  C23C14/35 ,  C23C14/564 ,  H01J37/32651 ,  H01J37/3405 ,  H01L21/00 ,  H01L21/2855

摘要： A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction. The reaction chamber and the semiconductor processing device can not only avoid or reduce the risk of sparking, but also reduce the pollution of the reaction chamber caused by the flaking off of metal particles; and in addition, it is possible to increase an inner diameter and an available space of the reaction chamber.

公开(公告)号：US20160322206A1

公开(公告)日：2016-11-03

申请号：US15109050

申请日：2014-12-29

申请人： BEIJING NMC CO., LTD.

发明人： Feng LV ,  Fenggang ZHANG ,  Mengxin ZHAO ,  Peijun DING

IPC分类号： H01J37/32 ,  C23C14/00 ,  H01J37/34 ,  H01L21/67

CPC分类号： H01J37/32642 ,  C23C14/0068 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32449 ,  H01J37/32633 ,  H01J37/32733 ,  H01J37/32853 ,  H01J37/34 ,  H01J37/3411 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207

摘要： Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

摘要翻译： 本发明的实施例提供一种处理室和半导体处理装置。 根据至少一个实施例，处理室包括反应室，气体引入系统和晶片转移装置。 反应室设置在处理室中，用于在晶片上进行处理，气体导入系统用于向反应室提供处理气体，并且晶片转移装置用于将晶片转移到反应室中。 衬套环组件设置在反应室中，并且构造成使得在衬套环组件本身和反应室的内侧壁之间形成流动均匀化空腔，从而均匀地输送来自气体的处理气体 引入系统，通过流动均匀化腔进入反应室。

公开(公告)号：US09478439B2

公开(公告)日：2016-10-25

申请号：US14646909

申请日：2013-11-01

申请人： BEIJING NMC CO., LTD.

发明人： Zhongwei Jiang

IPC分类号： H01L21/302 ,  H01L21/3213 ,  H01L21/3065 ,  B81C1/00

CPC分类号： H01L21/32137 ,  B81C1/00531 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L21/30655

摘要： Embodiments of the invention provide a substrate etching method, which includes: a deposition operation for depositing a polymer on a side wall of a silicon groove, an etching operation for etching the side wall of the silicon groove, and repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method, according to various embodiments of the invention, avoid the problem of damaging the side wall, thereby making the side wall smooth.

摘要翻译： 本发明的实施例提供了一种基板蚀刻方法，其包括：用于在硅槽的侧壁上沉积聚合物的沉积操作，用于蚀刻硅槽的侧壁的蚀刻操作，以及重复沉积操作和蚀刻 操作至少两次。 在完成蚀刻操作的所有循环的过程中，根据预设规则，反应室的室压力从预设的最高压力降低到预设的最低压力。 根据本发明的各种实施例的基板蚀刻方法避免了损坏侧壁的问题，从而使侧壁平滑。

公开(公告)号：US20160329228A1

公开(公告)日：2016-11-10

申请号：US15108493

申请日：2014-11-27

申请人： BEIJING NMC CO. LTD.

发明人： Meng LI ,  Fenggang ZHANG ,  Peijun DING ,  Mengxin ZHAO ,  Feifei LIU ,  Wen ZHANG

IPC分类号： H01L21/677

CPC分类号： H01L21/67778 ,  H01L21/67775 ,  H01L21/67796

摘要： The present invention provides a cassette positioning device and a semiconductor processing apparatus. The cassette positioning device includes: a positioning baseplate arranged horizontally and connected with the lifting device; a rotatable positioning, plate, which is located on the positioning baseplate, has one end rotatably connected with one end of the positioning baseplate, and is provided thereon with a positioning assembly; and a support column arranged under the rotatable positioning plate. The support column and the positioning baseplate can move relatively in the vertical direction, such that the rotatable positioning plate is pushed up by the support column and rotates to be inclined relatively to the positioning baseplate when the support column rises to a preset highest position relatively to the positioning baseplate, and the rotatable positioning plate and the positioning baseplate are stacked on the support column in parallel when the support column is located at a preset lowest position. In the cassette positioning device and the semiconductor processing apparatus, positions, in horizontal direction, of all the wafers in the cassette can be consistent, so that the wafers taken out by the mechanical arm can be located at uniquely specified positions on the mechanical arm.

摘要翻译： 本发明提供一种盒式定位装置和半导体处理装置。 盒定位装置包括：水平布置并与提升装置连接的定位底板; 位于定位基板上的可旋转定位板具有与定位基板的一端可旋转地连接的一端，并在其上设置有定位组件; 以及布置在可旋转定位板下方的支撑柱。 支撑柱和定位基板可以在垂直方向上相对移动，使得可旋转的定位板被支撑柱向上推动并且当支撑柱升高到相对于位置的预设最高位置时，相对于定位基板旋转以相对于定位基板倾斜 当支撑柱位于预设的最低位置时，定位基板以及可旋转定位板和定位基板平行堆叠在支撑柱上。 在盒式磁带定位装置和半导体处理装置中，磁带盒中的所有晶片在水平方向上的位置可以一致，使得由机械臂取出的晶片可以位于机械臂上唯一指定的位置。

公开(公告)号：US20160148789A1

公开(公告)日：2016-05-26

申请号：US15012941

申请日：2016-02-02

申请人： BEIJING NMC CO., LTD

发明人： PENG CHEN ,  YOU LV ,  PEIJUN DING ,  JINGSHAN YANG ,  GUODONG BIAN ,  MENGXIN ZHAO ,  QING SHE ,  WEI LI

IPC分类号： H01J37/32

CPC分类号： H01J37/32871 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32495 ,  H01J37/32651 ,  H01J2237/335

摘要： The present disclosure provides a pre-cleaning chamber. The pre-cleaning chamber includes a cavity, a top cover of the cavity, and an ion filtering unit with venting holes. The ion filtering unit is configured to divide the cavity into an upper sub-cavity and a lower sub-cavity and to filter out ions from plasma when the plasma is moving through the filtering unit from the upper sub-cavity to the lower sub-cavity. The pre-cleaning chamber further includes a carry unit located in the lower sub-cavity for supporting a wafer.

摘要翻译： 本公开提供了一种预清洁室。 预清洁室包括空腔，空腔的顶盖以及具有排气孔的离子过滤单元。 离子过滤单元构造成将空腔分成上子腔和下子腔，并且当等离子体从上子腔到下子腔移动通过过滤单元时，将离子离子离子 。 预清洁室还包括位于下子腔中的承载单元，用于支撑晶片。

公开(公告)号：US20150311091A1

公开(公告)日：2015-10-29

申请号：US14646909

申请日：2013-11-01

申请人： Beijing NMC Co., Ltd.

发明人： Zhongwei JIANG

IPC分类号： H01L21/3213

CPC分类号： H01L21/32137 ,  B81C1/00531 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L21/30655

摘要： Embodiments of the invention provide a substrate etching method, which includes: a deposition operation for depositing a polymer on a side wall of a silicon groove, an etching operation for etching the side wall of the silicon groove, and repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method, according to various embodiments of the invention, avoid the problem of damaging the side wall, thereby making the side wall smooth.

摘要翻译： 本发明的实施例提供了一种基板蚀刻方法，其包括：用于在硅槽的侧壁上沉积聚合物的沉积操作，用于蚀刻硅槽的侧壁的蚀刻操作，以及重复沉积操作和蚀刻 操作至少两次。 在完成蚀刻操作的所有循环的过程中，根据预设规则，反应室的室压力从预设的最高压力降低到预设的最低压力。 根据本发明的各种实施例的基板蚀刻方法避免了损坏侧壁的问题，从而使侧壁平滑。

公开(公告)号：US20150284846A1

公开(公告)日：2015-10-08

申请号：US14443327

申请日：2013-11-12

申请人： BEIJING NMC CO., LTD.

发明人： Ye Tu

IPC分类号： C23C16/458 ,  C23C16/18

CPC分类号： C23C16/4584 ,  C23C14/505 ,  C23C16/18 ,  C23C16/4586 ,  H01L21/68764 ,  H01L21/68771

摘要： Embodiments of the invention provide a tray device, a reaction chamber, and a MOCVD apparatus including the reaction chamber. According to an embodiment, the tray device includes a large tray, a rotating shaft, a small tray, and a supporting disk. The rotating shaft is connected with the center of the large tray and drives the large tray to rotate about the rotating shaft. The large tray is provided with a tray groove for placing the small tray. The supporting disk is located under the large tray. A sliding mechanism is provided between the supporting disk and the small tray, so that when revolving along with the large tray, the small tray spins under the function of the sliding mechanism.

摘要翻译： 本发明的实施例提供一种托盘装置，反应室和包括反应室的MOCVD装置。 根据实施例，托盘装置包括大托盘，旋转轴，小托盘和支撑盘。 旋转轴与大托盘的中心连接，驱动大托盘绕旋转轴旋转。 大托盘设置有用于放置小托盘的托盘槽。 支撑盘位于大托盘下方。 在支撑盘和小托盘之间设置滑动机构，当与大托盘一起旋转时，小托盘在滑动机构的作用下旋转。

公开(公告)号：US20170044660A1

公开(公告)日：2017-02-16

申请号：US15118566

申请日：2014-12-31

申请人： BEIJING NMC CO., LTD.

发明人： Jue HOU

IPC分类号： C23C14/50 ,  H01L21/687 ,  H01J37/32

CPC分类号： C23C14/505 ,  C23C16/4585 ,  H01J37/20 ,  H01J37/32715 ,  H01L21/68721

摘要： Embodiments of the invention provide a mechanical chuck and a plasma processing apparatus. According to at least one embodiment, the mechanical chuck includes a base and a fixing assembly including a locking ring, an insulation ring and an spacer ring, wherein the locking ring is configured to press an edge region of the workpiece to be processed so as to fix the same onto the base; an orthogonal projection of the spacer ring on an upper surface of the locking ring overlaps with the upper surface of the locking ring; and the insulation ring electrically insulates the spacer ring from the locking ring, an inner circumferential wall of the insulation ring, a portion of the upper surface of the locking ring inside the inner circumferential wall and a portion of a lower surface of the spacer ring inside the inner circumferential wall form a first groove, and an outer circumferential wall of the insulation ring, a portion of the upper surface of the locking ring outside the outer circumferential wall and a portion of the lower surface of the spacer ring outside the outer circumferential wall form a second groove.

摘要翻译： 本发明的实施例提供一种机械卡盘和等离子体处理装置。 根据至少一个实施例，所述机械卡盘包括基座和固定组件，所述固定组件包括锁定环，绝缘环和间隔环，其中，所述锁定环构造成按压待处理的工件的边缘区域，以便 固定在基地上; 隔离环在锁定环的上表面上的正交突起与锁定环的上表面重叠; 并且所述绝缘环将所述隔离环与所述锁定环电绝缘，所述绝缘环的内周壁，所述锁定环的上表面的内周壁内部的一部分和所述间隔环的下表面的一部分内部 所述内周壁形成第一槽，所述绝缘环的外周壁，所述锁定环的上表面的外周壁外侧的一部分和所述间隔环的下表面的外周壁外的一部分 形成第二槽。