公开(公告)号：US20190341248A1

公开(公告)日：2019-11-07

申请号：US16400850

申请日：2019-05-01

申请人： APPLIED MATERIALS, INC.

发明人： WEIMIN ZENG ,  YONG CAO

IPC分类号： H01L21/02

摘要： The present disclosure generally relates to tin oxide films prepared by physical vapor deposition using a doped tin target. The semiconductor film may include tin and oxygen, and may be formed in a PVD chamber including a silicon doped tin target. Additionally, the semiconductor film may be smooth compared to similarly formed films without a doped target. The semiconductor film may be deposited by applying an electrical bias to a sputtering silicon doped tin target including the silicon in an amount of 0.5 to 5% by atomic weight of the total target. The semiconductor film has a smooth surface morphology compared to similarly formed tin oxide films formed without a doped target.

公开(公告)号：US20180151337A1

公开(公告)日：2018-05-31

申请号：US15818169

申请日：2017-11-20

申请人： APPLIED MATERIALS, INC.

发明人： THANH X. NGUYEN ,  WEIMIN ZENG ,  YONG CAO

IPC分类号： H01J37/34 ,  H01L21/02

CPC分类号： H01J37/3441 ,  H01J37/3438 ,  H01J37/3488 ,  H01L21/02266

摘要： Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.