PROCESS KIT AND METHOD FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20180151337A1

    公开(公告)日:2018-05-31

    申请号:US15818169

    申请日:2017-11-20

    IPC分类号: H01J37/34 H01L21/02

    摘要: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

    TARGET RETAINING APPARATUS
    2.
    发明申请
    TARGET RETAINING APPARATUS 审中-公开
    目标保持装置

    公开(公告)号:US20150203960A1

    公开(公告)日:2015-07-23

    申请号:US14600915

    申请日:2015-01-20

    IPC分类号: C23C14/50 B25B5/08

    CPC分类号: H01J37/3435

    摘要: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.

    摘要翻译: 本文提供了包含相同的目标保持装置和基板处理室的实施例。 在一些实施例中,目标保持装置包括壳体,其包括第一槽和第二槽; 可移动地设置在所述壳体中的凸轮,其中所述凸轮的运动沿着所述第一狭槽被限制; 可移动地联接到所述凸轮的保持臂,其中所述保持臂的运动沿着所述第二狭槽被限制; 连接构件,其包括可旋转地联接到所述凸轮的第一端和可旋转地联接到所述保持臂的第二端; 以及将所述凸轮偏压到所述保持臂远离所述壳体延伸的第一位置的偏压元件。

    APPARATUS FOR PVD DIELECTRIC DEPOSITION
    5.
    发明申请
    APPARATUS FOR PVD DIELECTRIC DEPOSITION 有权
    PVD电介质沉积设备

    公开(公告)号:US20160172168A1

    公开(公告)日:2016-06-16

    申请号:US14616895

    申请日:2015-02-09

    IPC分类号: H01J37/34

    摘要: Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

    摘要翻译: 本文提供介电材料的物理气相沉积设备。 在一些实施例中,物理气相沉积室的室盖包括耦合到内部目标组件的内部磁控管组件和联接到外部目标组件的外部磁体组件,其中内部磁控管组件和内部目标组件被电隔离 从外部磁体组件和外部目标组件。