知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

20 records (took 0.024 seconds)

    COLLIMATOR FOR SELECTIVE PVD WITHOUT SCANNING
    1.
    发明申请
    COLLIMATOR FOR SELECTIVE PVD WITHOUT SCANNING 审中-公开

    公开(公告)号：US20200051798A1

    公开(公告)日：2020-02-13

    申请号：US16515785

    申请日：2019-07-18

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  XIANMIN TANG

    IPC: H01J37/34

    Abstract: Collimator assemblies and process chambers for processing substrates including collimator assemblies are provided herein. In some embodiments, a collimator assembly may include a first cylindrical divider, a second cylindrical divider nested entirely within the first cylindrical divider, and a third cylindrical divider nested entirely within the second cylindrical divider, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. In some embodiments, a process chamber for processing substrates may include a magnetron source, a target supported by a target backing plate cathode disposed below the magnetron source, and a collimator assembly having a plurality of nested cylindrical dividers, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant.

    MULTI-ZONE COLLIMATOR FOR SELECTIVE PVD
    2.
    发明申请
    MULTI-ZONE COLLIMATOR FOR SELECTIVE PVD 审中-公开

    公开(公告)号：US20190353919A1

    公开(公告)日：2019-11-21

    申请号：US16414975

    申请日：2019-05-17

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  FARZAD HOUSHMAND ,  ANANTHA SUBRAMANI ,  KEITH MILLER ,  XIANMIN TANG ,  PRASHANTH KOTHNUR

    IPC: G02B27/30 ,  H01J37/34

    Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.

    METHODS FOR FORMING COBALT-COPPER SELECTIVE FILL FOR AN INTERCONNECT
    8.
    发明申请
    METHODS FOR FORMING COBALT-COPPER SELECTIVE FILL FOR AN INTERCONNECT 有权
    用于形成用于互连的钴铜选择膜的方法

    公开(公告)号：US20160240432A1

    公开(公告)日：2016-08-18

    申请号：US15019587

    申请日：2016-02-09

    Applicant: APPLIED MATERIALS, INC.

    Inventor： RONG TAO ,  TAE HONG HA ,  XIANMIN TANG ,  JOUNG JOO LEE

    IPC: H01L21/768 ,  H01L21/285

    CPC classification number: H01L21/28556 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53257

    Abstract: Methods for processing a substrate include: (a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features.

    Abstract translation: 用于处理衬底的方法包括：（a）在第一多个特征中形成第一厚度的钴层和在衬底中形成的第二多个特征，其中第一多个特征和第二多个特征中的每一个 特征包括开口，并且其中第一多个特征的开口的宽度小于第二多个特征的开口的宽度; 和（b）将基底加热到第一温度以用钴材料填充第一多个特征，同时在衬底上沉积填充材料以填充第二多个特征。

    HIGH DENSITY TiN RF/DC PVD DEPOSITION WITH STRESS TUNING
    9.
    发明申请
    HIGH DENSITY TiN RF/DC PVD DEPOSITION WITH STRESS TUNING 有权
    高密度TiN RF / DC PVD沉积与应力调节

    公开(公告)号：US20130199925A1

    公开(公告)日：2013-08-08

    申请号：US13750318

    申请日：2013-01-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： YONG CAO ,  XIANMIN TANG ,  ADOLPH MILLER ALLEN ,  TZA-JING GUNG

    IPC: C23C14/34

    CPC classification number: C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/34

    Abstract: Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate.

    Abstract translation: 本文提供了在基板上沉积层的方法。 在一些实施例中，在物理气相沉积（PVD）室中在衬底上沉积含金属层的方法可以包括以VHF频率将RF功率施加到包括设置在衬底上方的PVD室中的金属的靶，以形成 来自等离子体形成气体的等离子体; 可选地向目标施加DC电力; 使用等离子体从靶中溅射金属原子，同时保持PVD室中的第一压力足以离子化主要部分的溅射金属原子; 并且将基板上的电位控制为与电离金属原子相同的极性，以在基板上沉积含金属层。

Patent Agency Ranking