公开(公告)号：US20200219720A1

公开(公告)日：2020-07-09

申请号：US16812593

申请日：2020-03-09

Applicant: APPLIED MATERIALS, INC.

Inventor： BEN-LI SHEU ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  ISMAIL EMESH ,  ROEY SHAVIV ,  XIANMIN TANG

IPC: H01L21/027 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

公开(公告)号：US20200255937A1

公开(公告)日：2020-08-13

申请号：US16541688

申请日：2019-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHERKI MEBARKI ,  BYEONG CHAN LEE ,  HUIXIONG DAI ,  TEJINDER SINGH ,  JOUNG JOO LEE ,  XIANMIN TANG

IPC: C23C14/54 ,  H01L21/02 ,  C23C14/34 ,  C23C14/58

Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.

公开(公告)号：US20200051794A1

公开(公告)日：2020-02-13

申请号：US16529211

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  PRABURAM RAJA ,  STEVEN V. SANSONI ,  JOHN FORSTER ,  PHILIP KRAUS ,  YANG GUO ,  PRASHANTH KOTHNUR ,  FARZAD HOUSHMAND ,  BENCHERKI MEBARKI ,  JOHN JOSEPH MAZZOCCO ,  THOMAS BREZOCZKY

IPC: H01J37/34 ,  B08B7/00

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

公开(公告)号：US20200051798A1

公开(公告)日：2020-02-13

申请号：US16515785

申请日：2019-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  XIANMIN TANG

IPC: H01J37/34

Abstract: Collimator assemblies and process chambers for processing substrates including collimator assemblies are provided herein. In some embodiments, a collimator assembly may include a first cylindrical divider, a second cylindrical divider nested entirely within the first cylindrical divider, and a third cylindrical divider nested entirely within the second cylindrical divider, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. In some embodiments, a process chamber for processing substrates may include a magnetron source, a target supported by a target backing plate cathode disposed below the magnetron source, and a collimator assembly having a plurality of nested cylindrical dividers, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant.

公开(公告)号：US20190353919A1

公开(公告)日：2019-11-21

申请号：US16414975

申请日：2019-05-17

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  FARZAD HOUSHMAND ,  ANANTHA SUBRAMANI ,  KEITH MILLER ,  XIANMIN TANG ,  PRASHANTH KOTHNUR

IPC: G02B27/30 ,  H01J37/34

Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.

公开(公告)号：US20190287791A1

公开(公告)日：2019-09-19

申请号：US15924821

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： BEN-LI SHEU ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  ISMAIL EMESH ,  ROEY SHAVIV ,  XIANMIN TANG

IPC: H01L21/027 ,  H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

公开(公告)号：US20190189465A1

公开(公告)日：2019-06-20

申请号：US16222005

申请日：2018-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： KEITH A. MILLER ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  XIANMIN TANG

IPC: H01L21/3213 ,  H01L21/285 ,  H01L21/768 ,  C23C14/56 ,  C23C14/34 ,  H01J37/34 ,  H01L21/683

CPC classification number: H01L21/32136 ,  C23C14/34 ,  C23C14/568 ,  H01J37/3402 ,  H01L21/2855 ,  H01L21/683 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76814

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein at least one of the substrate support or the linear PVD source are movable in a direction parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate, when disposed on the substrate support during operation.