公开(公告)号：US20200381275A1

公开(公告)日：2020-12-03

申请号：US16427642

申请日：2019-05-31

Applicant: APPLIED MATERIALS, INC.

Inventor： THOMAS BREZOCZKY ,  KIRANKUMAR NEELASANDRA SAVANDAIAH ,  SRINIVASA RAO YEDLA

IPC: H01L21/67 ,  H01L21/687 ,  B65G29/00

Abstract: Methods and apparatus for substrate processing are provided herein. The apparatus, for example, can include a plurality of multi environment chambers coupled to a buffer chamber configured to load a substrate therefrom into each of the plurality of multi environment chambers for processing of the substrate using a plurality of processing mini environment chambers coupled to each of the plurality of multi environment chambers, at least one of the plurality of multi environment chambers comprising a robot and at least one of the plurality of multi environment chambers comprising a carousel, wherein each of the robot and the carousel is configured to transfer the substrate to and from each of the processing mini environment chamber of the plurality of processing mini environment chambers.

公开(公告)号：US20200051794A1

公开(公告)日：2020-02-13

申请号：US16529211

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  PRABURAM RAJA ,  STEVEN V. SANSONI ,  JOHN FORSTER ,  PHILIP KRAUS ,  YANG GUO ,  PRASHANTH KOTHNUR ,  FARZAD HOUSHMAND ,  BENCHERKI MEBARKI ,  JOHN JOSEPH MAZZOCCO ,  THOMAS BREZOCZKY

IPC: H01J37/34 ,  B08B7/00

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.