公开(公告)号：US20220336227A1

公开(公告)日：2022-10-20

申请号：US17857381

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  AVGERINOS GELATOS ,  TAE HONG HA ,  XUESONG LU ,  SZUHENG HO ,  WEI LEI ,  MARK LEE ,  RAYMOND HUNG ,  XIANMIN TANG

IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/02 ,  H01L21/321 ,  C23C16/02 ,  H01L21/768 ,  C23C16/455 ,  C23C16/06 ,  C23C16/34 ,  C23C14/06 ,  C23C16/56

Abstract: Methods for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.