公开(公告)号：US20110186425A1

公开(公告)日：2011-08-04

申请号：US12999985

申请日：2009-06-17

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3423

摘要： A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular reference region; disposing a plurality of thin and long targets to face the corresponding thin and long deposition regions such that sputtering particles emitted from the plurality of thin and long targets are incident on the corresponding thin and long deposition regions; disposing a semiconductor wafer, while overlapping with the circular reference region; confining a plasma generated by a magnetron discharge in the vicinity of the targets, and emitting the sputtering particles from the targets; and rotating the semiconductor wafer at a predetermined rotation speed by using a normal line passing through the center of the circular reference region as a rotation central axis, to deposit a film on a surface of the semiconductor wafer.

摘要翻译： 溅射方法包括设置多个薄且长的沉积区域，使得薄且长的沉积区域各自在第一方向上与具有与半导体晶片的直径相等的直径的圆形参考区域交叉，并且以预定间隔布置在 第二方向垂直于第一方向; 设置所述多个薄且长的沉积区域中的一个，使得其沿着所述第一方向延伸的侧面的一侧穿过所述圆形参考区域的大致中心; 设置多个薄且长的沉积区域中的另一个，使得其沿着第一方向延伸的侧面的一侧通过圆形参考区域的实质边缘; 设置多个薄和长沉积区域的宽度，使得通过将第二方向上的多个薄沉积区域和长沉积区域的宽度求和而获得的值基本上等于圆形参考区域的半径; 设置多个薄且长的靶以面对相应的薄和长沉积区域，使得从多个薄且长的靶发射的溅射颗粒入射到相应的薄和长的沉积区域; 在与圆形参考区域重叠的同时设置半导体晶片; 限制在靶附近由磁控管放电产生的等离子体，并从靶中发射溅射粒子; 并且通过使用通过圆形基准区域的中心的法线作为旋转中心轴以预定转速旋转半导体晶片，以在半导体晶片的表面上沉积膜。

公开(公告)号：US20100126848A1

公开(公告)日：2010-05-27

申请号：US12089331

申请日：2006-10-06

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

摘要翻译： 提供一种磁控溅射装置，通过增加目标上的瞬时侵蚀密度可以提高成膜速度，通过随时间移动侵蚀区域可以延长目标寿命，以防止目标局部磨损，并实现均匀的磨损。 多个板状磁铁安装在柱状旋转轴的周围，柱状旋转轴旋转，从而在靶上形成高密度的侵蚀区域，以增加成膜速度，并且随着柱状体的旋转而使侵蚀区域移动 旋转轴，从而均匀地佩戴目标。

公开(公告)号：US20100059368A1

公开(公告)日：2010-03-11

申请号：US12594676

申请日：2008-04-04

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3455

摘要： Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

摘要翻译： 提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。 磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。 在磁控管溅射装置中，在目标表面上形成等离子体回路。 根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。

公开(公告)号：US20090135109A1

公开(公告)日：2009-05-28

申请号：US12273745

申请日：2008-11-19

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： H01J1/62 ,  C23C14/35 ,  G09G3/30

CPC分类号： H01L51/5092 ,  H01L51/0021 ,  H01L51/5221 ,  H01L51/56

摘要： In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB6 film, can be formed uniformly over a wide area on an electron injection layer by a rotary magnet sputtering apparatus.

摘要翻译： 在具有透明导电电极和与透明导电电极相对的阴极的有机EL元件中，阴极包括能够被溅射的稀土元素的膜。 可以通过旋转磁体溅射装置在电子注入层的广泛区域上均匀地形成具有低功函数的稀土元素的膜，例如LaB 6膜。

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20120125376A1

公开(公告)日：2012-05-24

申请号：US13381424

申请日：2010-05-27

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  H01L21/6708 ,  H01L21/6838

摘要： A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.

摘要翻译： 湿式处理装置在待处理的基板的台上保持，并通过旋转台进行湿处理。 基板由载物台保持，其中基板的中心偏离载物台的旋转中心，使用伯努利卡盘，其使惰性气体流到基板的背面，使得基板偏心旋转 以及舞台的旋转。 用于伯努利卡盘的第一气体供给通道设置在舞台的旋转轴部分，舞台还设置有与第一气体供给通道连通的第二气体供给通道，从而将惰性气体引入到背部 基板的表面。 第二气体供给通道相对于基板的中心轴线是对称的。

公开(公告)号：US08568577B2

公开(公告)日：2013-10-29

申请号：US12594676

申请日：2008-04-04

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3455

摘要： Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

摘要翻译： 提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。 磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。 在磁控管溅射装置中，在目标表面上形成等离子体回路。 根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。

公开(公告)号：US08535494B2

公开(公告)日：2013-09-17

申请号：US12920480

申请日：2009-03-02

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/00

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3497

摘要： Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.

摘要翻译： 提供一种旋转磁体溅射装置，其包括等离子体屏蔽构件和连接到地面的外壁，并且在等离子体屏蔽构件和外壁之间具有串联谐振电路和并联谐振电路。 串联谐振电路仅在其谐振频率下具有非常低的阻抗，而并联谐振电路仅在其谐振频率处具有非常高的阻抗。 利用这种配置，衬底RF功率和等离子体屏蔽构件之间的阻抗变得非常高，从而可以抑制待处理衬底10和等离子体屏蔽构件之间的等离子体的产生。 此外，由于在目标和地之间提供串联谐振电路，因此仅将RF功率有效地提供给基板在目标下通过的区域，从而产生自偏压。

公开(公告)号：US20110000783A1

公开(公告)日：2011-01-06

申请号：US12920480

申请日：2009-03-02

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3497

摘要： Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.

摘要翻译： 提供一种旋转磁体溅射装置，其包括等离子体屏蔽构件和连接到地面的外壁，并且在等离子体屏蔽构件和外壁之间具有串联谐振电路和并联谐振电路。 串联谐振电路仅在其谐振频率下具有非常低的阻抗，而并联谐振电路仅在其谐振频率处具有非常高的阻抗。 利用这种配置，衬底RF功率和等离子体屏蔽构件之间的阻抗变得非常高，从而可以抑制待处理衬底10和等离子体屏蔽构件之间的等离子体的产生。 此外，由于在目标和地之间提供串联谐振电路，因此仅将RF功率有效地提供给基板在目标下通过的区域，从而产生自偏压。

公开(公告)号：US20100178775A1

公开(公告)日：2010-07-15

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/465 ,  C23C16/00 ,  C23C16/511 ,  H01L21/469 ,  C23F1/00 ,  C23F1/08 ,  C23C16/455 ,  B28B1/44

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。