公开(公告)号：US20140024326A1

公开(公告)日：2014-01-23

申请号：US14007248

申请日：2012-03-23

申请人： Tadashi Imai ,  Takayuki Kaida ,  Satoru Kawakami ,  Hitoshi Masumura

发明人： Tadashi Imai ,  Takayuki Kaida ,  Satoru Kawakami ,  Hitoshi Masumura

IPC分类号： H04H40/18

CPC分类号： H04H40/18 ,  H04H20/26 ,  H04H40/90 ,  H04N5/455 ,  H04N5/46 ,  H04N21/4263 ,  H04N21/4382 ,  H04N21/4622 ,  H04N21/6112 ,  H04N21/6143

摘要： A first high frequency processing unit detects a first broadcasting wave transmitted using a first frequency band, and extracts a first high frequency signal. Further, a second high frequency processing unit detects a second broadcasting wave transmitted using a second frequency band different from the first frequency band, and extracts a second high frequency signal. Furthermore, at least one local oscillator generates a local oscillation signal used in the first high frequency processing unit and the second high frequency processing unit.

摘要翻译： 第一高频处理单元检测使用第一频带发送的第一广播波，并提取第一高频信号。 此外，第二高频处理单元检测使用与第一频带不同的第二频带发送的第二广播波，并提取第二高频信号。 此外，至少一个本地振荡器产生在第一高频处理单元和第二高频处理单元中使用的本地振荡信号。

公开(公告)号：US08522958B2

公开(公告)日：2013-09-03

申请号：US12993914

申请日：2009-05-19

申请人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi ,  Yosuke Muraguchi ,  Yasuyoshi Kitazawa ,  Yasumichi Mieno

发明人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi ,  Yosuke Muraguchi ,  Yasuyoshi Kitazawa ,  Yasumichi Mieno

IPC分类号： B65G49/00 ,  B65G54/02

CPC分类号： H01L21/68764 ,  B65G49/061 ,  B65G2249/02 ,  B65G2249/045 ,  H01L21/67709

摘要： An object is to provide a vacuum processing apparatus that is capable of suppressing the costs and making control easy. Provided is a vacuum processing apparatus that includes a vacuum section (2) of which inside is held in vacuum, a placing section (3) that is disposed inside the vacuum section (2) and is capable of placing a workpiece thereon, a linear motor 4) that includes coils (415) and makes the placing section (3) travel within the vacuum section, wherein air is placed inside the placing section (3) while being isolated from the vacuum section (2), and the coils (415) of the linear motor (4) are disposed inside the placing section (3).

摘要翻译： 本发明的目的是提供一种能够抑制成本并使控制变得容易的真空处理装置。 本发明提供一种真空处理装置，其特征在于，具备将真空部保持在真空中的真空部（2），配置在所述真空部（2）内部并能够在其上放置工件的放置部（3） 4），其包括线圈（415）并使放置部分（3）在真空部分内行进，其中在与真空部分（2）隔离的同时，空气放置在放置部分（3）内，并且线圈（415） 线性电动机（4）配置在放置部（3）的内部。

公开(公告)号：US08337621B2

公开(公告)日：2012-12-25

申请号：US12516498

申请日：2007-11-29

申请人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi

发明人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi

IPC分类号： B05C13/02 ,  B05C21/00

CPC分类号： H01L21/67709 ,  C23C14/12 ,  C23C14/568 ,  F16C32/0434 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67721 ,  H01L21/6776 ,  H02N15/00

摘要： A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.

摘要翻译： 用于处理衬底G的处理设备包括：用于处理衬底的处理室; 降低处理室内部压力的减压机构; 以及设置在所述处理室中以传送所述基板的传送机构，其中所述传送机构包括：引导构件; 用于保持基板的阶段; 用于移动舞台的驾驶员; 以及可移动部件，其支撑所述台架并沿着所述引导部件移动。 保持引导构件和可动构件，以便通过磁体的排斥力不彼此接触。

公开(公告)号：US20110186425A1

公开(公告)日：2011-08-04

申请号：US12999985

申请日：2009-06-17

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3423

摘要： A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular reference region; disposing a plurality of thin and long targets to face the corresponding thin and long deposition regions such that sputtering particles emitted from the plurality of thin and long targets are incident on the corresponding thin and long deposition regions; disposing a semiconductor wafer, while overlapping with the circular reference region; confining a plasma generated by a magnetron discharge in the vicinity of the targets, and emitting the sputtering particles from the targets; and rotating the semiconductor wafer at a predetermined rotation speed by using a normal line passing through the center of the circular reference region as a rotation central axis, to deposit a film on a surface of the semiconductor wafer.

摘要翻译： 溅射方法包括设置多个薄且长的沉积区域，使得薄且长的沉积区域各自在第一方向上与具有与半导体晶片的直径相等的直径的圆形参考区域交叉，并且以预定间隔布置在 第二方向垂直于第一方向; 设置所述多个薄且长的沉积区域中的一个，使得其沿着所述第一方向延伸的侧面的一侧穿过所述圆形参考区域的大致中心; 设置多个薄且长的沉积区域中的另一个，使得其沿着第一方向延伸的侧面的一侧通过圆形参考区域的实质边缘; 设置多个薄和长沉积区域的宽度，使得通过将第二方向上的多个薄沉积区域和长沉积区域的宽度求和而获得的值基本上等于圆形参考区域的半径; 设置多个薄且长的靶以面对相应的薄和长沉积区域，使得从多个薄且长的靶发射的溅射颗粒入射到相应的薄和长的沉积区域; 在与圆形参考区域重叠的同时设置半导体晶片; 限制在靶附近由磁控管放电产生的等离子体，并从靶中发射溅射粒子; 并且通过使用通过圆形基准区域的中心的法线作为旋转中心轴以预定转速旋转半导体晶片，以在半导体晶片的表面上沉积膜。

公开(公告)号：US20100068375A1

公开(公告)日：2010-03-18

申请号：US12441764

申请日：2007-10-01

申请人： Satoru Kawakami

发明人： Satoru Kawakami

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C14/12 ,  C23C14/243 ,  C23C14/564 ,  C23C14/568 ,  H01L51/56

摘要： Deposits adhered on the inner surface of a processing chamber or the like of an evaporating apparatus can be removed without having to open the processing chamber. Disclosed is an evaporating apparatus for performing a film forming process on a target object to be processed by vapor deposition, the apparatus including: an evaporating head for supplying vapor of a film forming material to the target object; vapor generating units for vaporizing the film forming material; a cleaning gas generating unit for generating a cleaning gas; vapor supply pipes for supplying the vapor of the film forming material to the evaporating head from the vapor generating units; and a cleaning gas supply pipe for supplying the cleaning gas to the evaporating head from the cleaning gas generating unit, wherein opening/closing valves are installed on the vapor supply pipes and the cleaning gas supply pipe.

摘要翻译： 可以除去附着在蒸发装置的处理室等的内表面上的沉积物，而不必打开处理室。 公开了一种用于对通过气相沉积处理的目标物体进行成膜处理的蒸发装置，该装置包括：用于将成膜材料的蒸汽供应到目标物体的蒸发头; 用于蒸发成膜材料的蒸汽发生单元; 用于产生清洁气体的清洁气体发生单元; 用于从蒸气发生单元将成膜材料的蒸汽供应到蒸发头的蒸气供应管; 以及清洁气体供给管，其用于从清洁气体生成单元向清洗气体供给清洗气体，在蒸气供给管和清洗气体供给管上设置有开闭阀。

公开(公告)号：US20100043712A1

公开(公告)日：2010-02-25

申请号：US12516498

申请日：2007-11-29

申请人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi

发明人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi

IPC分类号： C23C16/458 ,  C23C16/00 ,  H01L21/677

CPC分类号： H01L21/67709 ,  C23C14/12 ,  C23C14/568 ,  F16C32/0434 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67721 ,  H01L21/6776 ,  H02N15/00

摘要： A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.

摘要翻译： 用于处理衬底G的处理设备包括：用于处理衬底的处理室; 降低处理室内部压力的减压机构; 以及设置在所述处理室中以传送所述基板的传送机构，其中所述传送机构包括：引导构件; 用于保持基板的阶段; 用于移动舞台的驾驶员; 以及可移动部件，其支撑所述台架并沿着所述引导部件移动。 保持引导构件和可动构件，以便通过磁体的排斥力不彼此接触。

公开(公告)号：US20090169344A1

公开(公告)日：2009-07-02

申请号：US12379767

申请日：2009-02-27

申请人： Toshihisa Nozawa ,  Satoru Kawakami

发明人： Toshihisa Nozawa ,  Satoru Kawakami

IPC分类号： H01L21/677

CPC分类号： H01L21/681 ,  C23C16/54 ,  H01L21/67259 ,  H01L21/67742

摘要： A substrate processing apparatus 1 has: sensors 21 and 22 provided in an etching chamber 14 and configured to detect a relative position between the etching chamber 14 and a wafer transfer mechanism 23; a control section 38 configured to correct positional displacement; a motor controller 39; a motor 28; and a motor 30. Since the positional displacement of a wafer W can be corrected, the wafer transfer mechanism 23 is capable of carrying the wafer W into the etching chamber 14 without causing any positional displacement, so that the wafer W can be placed on a susceptor 19 at a proper position.

摘要翻译： 基板处理装置1具有：设置在蚀刻室14中并被配置为检测蚀刻室14和晶片传送机构23之间的相对位置的传感器21和22; 被配置为校正位置偏移的控制部38; 马达控制器39; 马达28; 由于可以校正晶片W的位置偏移，晶片传送机构23能够将晶片W搬入蚀刻室14而不会发生任何位置偏移，从而可以将晶片W放置在 感受器19在适当的位置。

公开(公告)号：US5665166A

公开(公告)日：1997-09-09

申请号：US735489

申请日：1996-10-23

申请人： Youichi Deguchi ,  Satoru Kawakami ,  Yoichi Ueda ,  Mitsuaki Komino

发明人： Youichi Deguchi ,  Satoru Kawakami ,  Yoichi Ueda ,  Mitsuaki Komino

IPC分类号： C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/5096 ,  H01J37/32174 ,  H01J37/32935

摘要： Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing gas supplying mechanism for forming a plasma into a region between the first and second electrodes, and a bias potential detecting mechanism for detecting the bias potential of the first electrode. The bias detecting mechanism has a detecting terminal positioned in the vicinity of the object to be processed.

摘要翻译： 公开了一种等离子体处理装置，包括：第一电极，待处理物体将要设置在其上;第二电极，被布置为面对第一电极;高频电源，用于在第一和第二电极之间提供高频电力 用于将等离子体形成到第一和第二电极之间的区域的处理气体供给机构，以及用于检测第一电极的偏置电位的偏置电位检测机构。 偏置检测机构具有位于待处理对象附近的检测端子。

公开(公告)号：US20110240223A1

公开(公告)日：2011-10-06

申请号：US13129167

申请日：2009-11-11

申请人： Shinji Matsubayashi ,  Satoru Kawakami ,  Yasuhiro Tobe ,  Masaru Nishimura ,  Yasushi Yagi ,  Teruyuki Hayashi ,  Yuji Ono ,  Fumio Shimo

发明人： Shinji Matsubayashi ,  Satoru Kawakami ,  Yasuhiro Tobe ,  Masaru Nishimura ,  Yasushi Yagi ,  Teruyuki Hayashi ,  Yuji Ono ,  Fumio Shimo

IPC分类号： B08B13/00 ,  B05C13/00

CPC分类号： H01L51/56 ,  H01L21/67173 ,  H01L21/6723

摘要： There is provided a substrate processing system having high maintainability by widening a gap between various processing apparatuses connected with side surfaces of transfer modules and capable of achieving sufficient productivity by avoiding deterioration in throughput. The substrate processing system for manufacturing an organic EL device by forming a multiple number of layers including, e.g., an organic layer on a substrate includes at least one transfer module configured to be evacuable and arranged along a straight transfer route. Within the transfer module, a multiple number of loading/unloading areas for loading/unloading the substrate with respect to a processing apparatus and at least one stocking area positioned between the loading/unloading areas are alternately arranged along the transfer route in series, and the processing apparatus is connected with a side surface of the transfer module at a position facing each of the loading/unloading areas.

摘要翻译： 提供了一种具有高可维护性的基板处理系统，通过扩大与传送模块的侧表面连接的各种处理设备之间的间隙，并且能够通过避免吞吐量的恶化来实现足够的生产率。 用于通过在衬底上形成包括例如有机层的多个层来制造有机EL器件的衬底处理系统包括至少一个被配置为可沿着直线传送路线排空和布置的传送模块。 在传送模块内，沿着传送路径交替布置多个用于相对于处理装置加载/卸载基板的装载/卸载区域和位于装载/卸载区域之间的至少一个放料区域， 处理设备在面向每个装载/卸载区域的位置处与传送模块的侧表面连接。

公开(公告)号：US20070113787A1

公开(公告)日：2007-05-24

申请号：US11654007

申请日：2007-01-17

申请人： Tsutomu Higashiura ,  Takashi Akahori ,  Satoru Kawakami ,  Nobuhiro Iwama

发明人： Tsutomu Higashiura ,  Takashi Akahori ,  Satoru Kawakami ,  Nobuhiro Iwama

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32183

摘要： The upper electrode (15a) and the lower electrode (15b) are installed in the chamber (2) in parallel. Between these electrodes, the upper electrode (15a) is electrically grounded. The lower electrode (15b) is connected to the first RF power generator (13) via the low-pass filter (14) and to the second RF power generator (22) via the high-pass filter (23). Wafer W is held against the upper part of the lower electrode (15b) by the high-temperature electrostatic chuck ESC. By being distributed the first and the second RF electric power from the RF power generators (13) and (22), respectively, plasma is produced near the lower electrode (15b), and the wafer W is processed by the plasma. By these procedures, plasma process apparatus with high efficiency in plasma processing and simple structure can be offered.

摘要翻译： 上电极（15A）和下电极（15b）平行地安装在腔室（2）中。 在这些电极之间，上电极（15A）电接地。 低电极（15b）经由低通滤波器（14）连接到第一RF发生器（13），经由高通滤波器（23）连接到第二RF发电机（22）。 通过高温静电卡盘ESC将晶片W保持在下电极（15b）的上部。 通过分别从RF发电机（13）和（22）分配第一和第二RF电力，在下电极（15b）附近产生等离子体，并且通过等离子体处理晶片W. 通过这些方法，可以提供等离子体处理的高效率的等离子体处理装置和简单的结构。