公开(公告)号：US08946983B2

公开(公告)日：2015-02-03

申请号：US14002252

申请日：2012-05-14

Applicant: Nobuo Matsumura ,  Takejiro Inoue ,  Hironobu Sadakuni ,  Yutake Ishida ,  Kazunari Kawamoto ,  Masahiro Yoshioka ,  Tetsuya Goto

Inventor： Nobuo Matsumura ,  Takejiro Inoue ,  Hironobu Sadakuni ,  Yutake Ishida ,  Kazunari Kawamoto ,  Masahiro Yoshioka ,  Tetsuya Goto

IPC: F21K99/00 ,  H01L33/50 ,  C08J5/18 ,  C08L83/04 ,  H01L23/00 ,  C08G77/04 ,  C08G77/12 ,  C08G77/20 ,  C08G77/00

CPC classification number: F21K9/56 ,  C08G77/045 ,  C08G77/12 ,  C08G77/20 ,  C08G77/80 ,  C08J5/18 ,  C08J2383/07 ,  C08K3/01 ,  C08K3/22 ,  C08K5/5419 ,  C08K5/56 ,  C08K2003/026 ,  C08L83/00 ,  C08L83/04 ,  F21K9/64 ,  F21K9/90 ,  H01L24/83 ,  H01L33/502 ,  H01L2224/83192 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A phosphor-containing sheet having a storage modulus of 0.1 MPa or more at 25° C. and a storage modulus of less than 0.1 MPa at 100° C., wherein a resin main component of the phosphor-containing sheet is a crosslinked product formed by subjecting a crosslinkable silicone composition containing a specific composition to a hydrosilylation reaction. This phosphor-containing sheet provides a phosphor sheet having good shapability and high adhesive power as a phosphor sheet bonded to an LED chip as a wavelength conversion layer.

Abstract translation: 在25℃下的储能模量为0.1MPa以上，在100℃下的储能模量小于0.1MPa的含磷光体片材，其中，含磷光体片材的树脂主成分为形成的交联体 通过将含有特定组成的可交联硅氧烷组合物进行氢化硅烷化反应。 该含磷光体片作为波长转换层与作为LED芯片接合的荧光体片材提供具有良好的成形性和高粘合力的荧光体片。

公开(公告)号：US08573151B2

公开(公告)日：2013-11-05

申请号：US12393724

申请日：2009-02-26

Applicant: Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto ,  Yasuyuki Shirai ,  Masafumi Kitano ,  Kohei Watanuki ,  Takaaki Matsuoka ,  Shigemi Murakawa

Inventor： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto ,  Yasuyuki Shirai ,  Masafumi Kitano ,  Kohei Watanuki ,  Takaaki Matsuoka ,  Shigemi Murakawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  B05D5/06 ,  B05D3/02

CPC classification number: H01J37/32192 ,  H01J37/32238

Abstract: A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

Abstract translation: 传统的微波等离子体处理装置即使使用氪（Kr）作为等离子体产生气体，也只能得到与稀有气体例如氩气（Ar）相同的特性水平的氧化膜或氮化物膜 ）用作等离子体发生气体。 因此，代替形成仅具有陶瓷构件的微波等离子体处理装置的介电窗口，可以通过热处理获得化学计量的SiO 2组成的平坦化膜涂覆在陶瓷构件的多个表面中的一个表面上， 处理空间，然后热处理，从而形成具有非常平坦和致密表面的平坦化绝缘膜。 在平坦化绝缘膜上形成耐腐蚀膜。

公开(公告)号：US08496792B2

公开(公告)日：2013-07-30

申请号：US12593660

申请日：2008-03-28

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/347

Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

Abstract translation: 在旋转磁体溅射装置中，测量目标消耗量位移量，并且对应于测量结果，调整旋转磁体组与目标之间的距离，并且长时间实现均匀的成膜速度，以便 以减少由于目标物的消耗导致的目标表面的变化并且随着时间而减少成膜速率的变化。 可以使用超声波传感器或激光发射/接收装置作为测量目标的消耗位移量的装置。

公开(公告)号：US08372200B2

公开(公告)日：2013-02-12

申请号：US12308333

申请日：2007-06-13

Applicant: Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

Inventor： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC: C23C16/455 ,  C23C16/00 ,  H01L21/3065

CPC classification number: B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

Abstract translation: 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US20120064259A1

公开(公告)日：2012-03-15

申请号：US13320376

申请日：2010-03-19

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: C23C14/35 ,  F28D15/00

CPC classification number: C23C14/35 ,  H01J37/3405 ,  H01J37/3497

Abstract: Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion.

Abstract translation: 提供一种旋转磁体溅射装置，其减少由等离子体激发功率的增加引起的由于目标部分的加热引起的不利影响。 旋转磁体溅射装置具有这样的结构，其中通过使冷却介质在形成在多个螺旋状板状磁体组之间的螺旋空间中流动，或者通过在背板中设置冷却通道，从目标部分去除热量 支援目标部分。

公开(公告)号：US20110169390A1

公开(公告)日：2011-07-14

申请号：US13063583

申请日：2009-09-17

Applicant: Tadahiro Ohmi ,  Tetsuya Goto

Inventor： Tadahiro Ohmi ,  Tetsuya Goto

IPC: H01J7/26 ,  H01J1/14 ,  H01J1/00 ,  H01J9/04

CPC classification number: H01J25/587 ,  H01J23/05

Abstract: It is an object of the present invention to obtain a cathode body capable of maintaining a long service life even when a high current flows therethrough. According to the present invention, it is possible to obtain a magnetron cathode body including, as a base material, a high-melting-point metal containing an electron emission material, and rare-earth boride coating a surface thereof. As the electron emission material and the high-melting-point metal, La2O3 and W are desirable, respectively. As the rare-earth boride, LaB6 is preferable.

Abstract translation: 本发明的目的是获得即使当高电流流经时也能够保持长使用寿命的阴极体。 根据本发明，可以获得包含作为基材的含有电子发射材料的高熔点金属和涂覆其表面的稀土硼化物的磁控阴极体。 作为电子发射材料和高熔点金属，分别需要La 2 O 3和W。 作为稀土硼化物，优选LaB6。

公开(公告)号：US20110114375A1

公开(公告)日：2011-05-19

申请号：US13003103

申请日：2009-05-29

Applicant: Tadahiro Ohmi ,  Tetsuya Goto

Inventor： Tadahiro Ohmi ,  Tetsuya Goto

IPC: H05K1/09 ,  H05K1/02 ,  H05K3/00

CPC classification number: H05K3/381 ,  H05K3/388 ,  H05K3/421 ,  H05K3/4644 ,  H05K2201/0179 ,  H05K2203/095 ,  Y10T29/49124

Abstract: Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.

Abstract translation: 通过利用等离子体对基板的表面进行氮化而形成氮化树脂层，进而在形成铜膜之前，使氮化铜膜薄膜化，从而提高布线层与树脂层的粘合性。

公开(公告)号：US07879182B2

公开(公告)日：2011-02-01

申请号：US10584340

申请日：2004-09-24

Applicant: Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

Inventor： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

Abstract: A system for processing a substrate uniformly by increasing the number of gas discharge holes being arranged per unit area of a shower plate as receding from the center of the shower plate or increasing the radii of the gas discharge holes as receding from the center of the shower plate thereby making the plasma excitation gas flow uniform.

Abstract translation: 一种用于通过增加从喷淋板的中心退出的喷淋板的每单位面积排列的排气孔的数量而均匀地处理基板的系统，或者从喷淋中心离开时增加排气孔的半径 从而使等离子体激发气体流动均匀。

公开(公告)号：US20110000533A1

公开(公告)日：2011-01-06

申请号：US12920900

申请日：2009-03-02

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Kouji Tanaka ,  Yuichi Sano

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Kouji Tanaka ,  Yuichi Sano

IPC: H01L31/105

CPC classification number: H01L31/075 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/07 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/108 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548

Abstract: It is possible to reduce the contact resistance so as to improve the conversion efficiency of a photoelectric conversion element structure. Provided is a photoelectric conversion element structure of the pin structure which selects an upper limit energy level of the valence band of the p-type semiconductor or the electron affinity of the n-type semiconductor layer and the work function of a metal layer which is brought into contact with the semiconductor, so as to reduce the contact resistance as compared to the case when Al or Ag is used as an electrode. The selected metal layer may be arranged between the electrode formed from Al or Ag and the semiconductor or may be substituted for the n- or p-type semiconductor.

Abstract translation: 可以降低接触电阻，从而提高光电转换元件结构的转换效率。 提供了选择p型半导体的价带的上限能级或n型半导体层的电子亲和力的引脚结构的光电转换元件结构以及被带入的金属层的功函数 与使用Al或Ag作为电极的情况相比，与半导体接触以降低接触电阻。 所选择的金属层可以布置在由Al或Ag形成的电极和半导体之间，或者可以代替n型或p型半导体。

公开(公告)号：US20100126852A1

公开(公告)日：2010-05-27

申请号：US12593660

申请日：2008-03-28

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/347

Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

Abstract translation: 在旋转磁体溅射装置中，测量目标消耗量位移量，并且对应于测量结果，调整旋转磁体组与目标之间的距离，并且长时间实现均匀的成膜速度，以便 以减少由于目标物的消耗导致的目标表面的变化并且随着时间而减少成膜速率的变化。 可以使用超声波传感器或激光发射/接收装置作为测量目标的消耗位移量的装置。