公开(公告)号：US20110000533A1

公开(公告)日：2011-01-06

申请号：US12920900

申请日：2009-03-02

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Kouji Tanaka ,  Yuichi Sano

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Kouji Tanaka ,  Yuichi Sano

IPC: H01L31/105

CPC classification number: H01L31/075 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/07 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/108 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548

Abstract: It is possible to reduce the contact resistance so as to improve the conversion efficiency of a photoelectric conversion element structure. Provided is a photoelectric conversion element structure of the pin structure which selects an upper limit energy level of the valence band of the p-type semiconductor or the electron affinity of the n-type semiconductor layer and the work function of a metal layer which is brought into contact with the semiconductor, so as to reduce the contact resistance as compared to the case when Al or Ag is used as an electrode. The selected metal layer may be arranged between the electrode formed from Al or Ag and the semiconductor or may be substituted for the n- or p-type semiconductor.

Abstract translation: 可以降低接触电阻，从而提高光电转换元件结构的转换效率。 提供了选择p型半导体的价带的上限能级或n型半导体层的电子亲和力的引脚结构的光电转换元件结构以及被带入的金属层的功函数 与使用Al或Ag作为电极的情况相比，与半导体接触以降低接触电阻。 所选择的金属层可以布置在由Al或Ag形成的电极和半导体之间，或者可以代替n型或p型半导体。

公开(公告)号：US20100275981A1

公开(公告)日：2010-11-04

申请号：US12809447

申请日：2008-12-12

Applicant: Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

Inventor： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L31/18 ,  C23C16/24 ,  C23C16/511 ,  H01L31/028 ,  H01L31/04 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1816 ,  Y02E10/547 ,  Y02P70/521

Abstract: An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber 10 which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit 40 which supplies plasma excitation gas to a plasma excitation region in the chamber 10, a pressure regulation unit 70 which regulates pressure in the chamber 10, a second gas supply unit 50 which supplies raw gas to a plasma diffusion region in the chamber 10, a microwave application unit 20 which applies microwaves into the chamber 10, and a bias voltage application unit 60 which selects and applies a substrate bias voltage to the substrate W according to the type of gas.

Abstract translation: 一种用于制造光电转换元件的装置和方法以及光电转换元件，该装置和方法能够高效地用微波等离子体形成膜，防止氧气混合，并减少缺陷数量。 本发明提供一种通过使用微波等离子体CVD在基板上形成半导体叠层膜的光电转换元件制造装置100。 该装置包括：腔室10，其是容纳基底的封闭空间，其上安装有用于薄膜形成的被检体基底;第一气体供给单元40，其向等离子体激发区域提供等离子体激发气体; 调节室10内的压力的压力调节单元70，向室10中的等离子体扩散区域供给原料气体的第二气体供给单元50，将微波施加到室10中的微波施加单元20以及偏置电压 应用单元60，其根据气体的类型选择并施加衬底偏置电压到衬底W.

公开(公告)号：US20110186425A1

公开(公告)日：2011-08-04

申请号：US12999985

申请日：2009-06-17

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3405 ,  H01J37/3423

Abstract: A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular reference region; disposing a plurality of thin and long targets to face the corresponding thin and long deposition regions such that sputtering particles emitted from the plurality of thin and long targets are incident on the corresponding thin and long deposition regions; disposing a semiconductor wafer, while overlapping with the circular reference region; confining a plasma generated by a magnetron discharge in the vicinity of the targets, and emitting the sputtering particles from the targets; and rotating the semiconductor wafer at a predetermined rotation speed by using a normal line passing through the center of the circular reference region as a rotation central axis, to deposit a film on a surface of the semiconductor wafer.

Abstract translation: 溅射方法包括设置多个薄且长的沉积区域，使得薄且长的沉积区域各自在第一方向上与具有与半导体晶片的直径相等的直径的圆形参考区域交叉，并且以预定间隔布置在 第二方向垂直于第一方向; 设置所述多个薄且长的沉积区域中的一个，使得其沿着所述第一方向延伸的侧面的一侧穿过所述圆形参考区域的大致中心; 设置多个薄且长的沉积区域中的另一个，使得其沿着第一方向延伸的侧面的一侧通过圆形参考区域的实质边缘; 设置多个薄和长沉积区域的宽度，使得通过将第二方向上的多个薄沉积区域和长沉积区域的宽度求和而获得的值基本上等于圆形参考区域的半径; 设置多个薄且长的靶以面对相应的薄和长沉积区域，使得从多个薄且长的靶发射的溅射颗粒入射到相应的薄和长的沉积区域; 在与圆形参考区域重叠的同时设置半导体晶片; 限制在靶附近由磁控管放电产生的等离子体，并从靶中发射溅射粒子; 并且通过使用通过圆形基准区域的中心的法线作为旋转中心轴以预定转速旋转半导体晶片，以在半导体晶片的表面上沉积膜。

公开(公告)号：US20100230387A1

公开(公告)日：2010-09-16

申请号：US12308333

申请日：2007-06-13

Applicant: Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

Inventor： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC: C23F1/08 ,  C23C16/00 ,  C23F1/00 ,  C23C16/455 ,  C23C16/511 ,  B22F3/12 ,  B28B1/00

CPC classification number: B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

Abstract translation: 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US20100126848A1

公开(公告)日：2010-05-27

申请号：US12089331

申请日：2006-10-06

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3455

Abstract: A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

Abstract translation: 提供一种磁控溅射装置，通过增加目标上的瞬时侵蚀密度可以提高成膜速度，通过随时间移动侵蚀区域可以延长目标寿命，以防止目标局部磨损，并实现均匀的磨损。 多个板状磁铁安装在柱状旋转轴的周围，柱状旋转轴旋转，从而在靶上形成高密度的侵蚀区域，以增加成膜速度，并且随着柱状体的旋转而使侵蚀区域移动 旋转轴，从而均匀地佩戴目标。

公开(公告)号：US20100059368A1

公开(公告)日：2010-03-11

申请号：US12594676

申请日：2008-04-04

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3405 ,  H01J37/3455

Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Abstract translation: 提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。 磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。 在磁控管溅射装置中，在目标表面上形成等离子体回路。 根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。

公开(公告)号：US20090135109A1

公开(公告)日：2009-05-28

申请号：US12273745

申请日：2008-11-19

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: H01J1/62 ,  C23C14/35 ,  G09G3/30

CPC classification number: H01L51/5092 ,  H01L51/0021 ,  H01L51/5221 ,  H01L51/56

Abstract: In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB6 film, can be formed uniformly over a wide area on an electron injection layer by a rotary magnet sputtering apparatus.

Abstract translation: 在具有透明导电电极和与透明导电电极相对的阴极的有机EL元件中，阴极包括能够被溅射的稀土元素的膜。 可以通过旋转磁体溅射装置在电子注入层的广泛区域上均匀地形成具有低功函数的稀土元素的膜，例如LaB 6膜。

公开(公告)号：US20070030568A1

公开(公告)日：2007-02-08

申请号：US11492217

申请日：2006-07-25

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoshi Ikeda ,  Kouichi Niikura

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoshi Ikeda ,  Kouichi Niikura

IPC: G02B1/10 ,  F21V9/04 ,  G02F1/1335 ,  B32B17/06 ,  C23C14/00 ,  C23C14/32

CPC classification number: G02B5/0858 ,  C23C14/022 ,  C23C14/205 ,  C23C14/345 ,  C23C14/584 ,  C23C16/0281 ,  C23C16/345 ,  C23C28/322 ,  C23C28/34 ,  C23C28/36 ,  G02B6/0055

Abstract: A reflector member of the present invention includes a silver thin film formed on a substrate and a silicon nitride protection film formed on the silver thin film. The silver thin film has the (111) orientation as the principal plane orientation. Preferably, 99% or more of the silver thin film has the (111) orientation as the principal plane orientation. The thickness of the silver thin film is in a range of 100 nm to 350 nm.

Abstract translation: 本发明的反射构件包括形成在基板上的银薄膜和形成在银薄膜上的氮化硅保护膜。 银薄膜具有（111）取向作为主平面取向。 优选地，99％以上的银薄膜的（111）取向为主面取向。 银薄膜的厚度在100nm至350nm的范围内。

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

Applicant: Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

Inventor： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract translation: 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20120125376A1

公开(公告)日：2012-05-24

申请号：US13381424

申请日：2010-05-27

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

IPC: B08B7/00

CPC classification number: H01L21/67051 ,  H01L21/6708 ,  H01L21/6838

Abstract: A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.

Abstract translation: 湿式处理装置在待处理的基板的台上保持，并通过旋转台进行湿处理。 基板由载物台保持，其中基板的中心偏离载物台的旋转中心，使用伯努利卡盘，其使惰性气体流到基板的背面，使得基板偏心旋转 以及舞台的旋转。 用于伯努利卡盘的第一气体供给通道设置在舞台的旋转轴部分，舞台还设置有与第一气体供给通道连通的第二气体供给通道，从而将惰性气体引入到背部 基板的表面。 第二气体供给通道相对于基板的中心轴线是对称的。