公开(公告)号：US20230147897A1

公开(公告)日：2023-05-11

申请号：US17969700

申请日：2022-10-20

申请人： InnoCare Optoelectronics Corporation

发明人： Hsin-Hung Lin ,  Sheng-I Chen

IPC分类号： H01L31/18 ,  G01T1/166 ,  H01L31/0352

CPC分类号： H01L31/1816 ,  H01L31/1884 ,  G01T1/1663 ,  H01L31/035209

摘要： A detection device including a substrate, a switch element, a photoelectric element, and a scintillator is provided. The switch element is disposed on the substrate. The photoelectric element is disposed on the substrate and coupled to the switch element. The photoelectric element includes a semiconductor, and the semiconductor includes a monocrystalline material or a polycrystalline material. The scintillator is at least partially overlapped with the photoelectric element in a top view direction of the detection device.

公开(公告)号：US09911888B2

公开(公告)日：2018-03-06

申请号：US14976798

申请日：2015-12-21

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tze-Chiang Chen ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L31/077 ,  C23C16/50 ,  H01L31/20 ,  H01L21/02 ,  C23C16/02 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  C23C16/455 ,  C23C16/515 ,  H01L31/0224 ,  H01L31/065 ,  H01L31/18 ,  H01L31/056

CPC分类号： H01L31/077 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/50 ,  C23C16/515 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03682 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/065 ,  H01L31/1816 ,  H01L31/20 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548

摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

公开(公告)号：US20170154775A1

公开(公告)日：2017-06-01

申请号：US15258144

申请日：2016-09-07

申请人： International Business Machines Corporation

发明人： KARTHIK BALAKRISHNAN ,  KANGGUO CHENG ,  POUYA HASHEMI ,  ALEXANDER REZNICEK

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/02694 ,  H01L21/02164 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/28255 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/32055 ,  H01L21/324 ,  H01L21/7624 ,  H01L21/76264 ,  H01L21/76283 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/267 ,  H01L29/7378 ,  H01L29/7848 ,  H01L29/785 ,  H01L31/1816 ,  H01L2924/10271

摘要： A semiconductor device comprising a substrate having a region protruding from the substrate surface; a relaxed semiconductor disposed on the region; an additional semiconductor disposed on the relaxed semiconductor; and low density dielectric disposed next to and at least partially underneath the relaxed semiconductor and adjacent to the protruding region of the substrate.

公开(公告)号：US09508889B2

公开(公告)日：2016-11-29

申请号：US13916823

申请日：2013-06-13

申请人： NEWSOUTH INNOVATIONS PTY LIMITED

发明人： Martin Green ,  Xiaojing Hao ,  Chao-Yang Tsao

IPC分类号： H01L31/028 ,  H01L31/18 ,  C23C14/06 ,  C30B23/02 ,  C30B29/08 ,  H01L21/02 ,  H01L31/0725 ,  H01L31/0735

CPC分类号： H01L31/1816 ,  C23C14/06 ,  C30B23/02 ,  C30B23/025 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L31/028 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/1852 ,  Y02E10/544

摘要： A method is presented for forming a Ge containing layer on a Si substrate. The method includes providing a crystalline Si substrate having a surface that has a crystallographic orientation, heating the Si substrate in a vacuum environment, exposing the Si substrate to a surfactant that is suitable for growth of the Ge containing layer on the crystalline Si using surfactant mediation, and thereafter growing the Ge containing layer on the surface of the heated Si substrate using a suitable sputtering technique. The conditions of the growth of the Ge containing layer are selected such that a thin Ge containing layer is formed on the surface of the Si substrate. The thin Ge containing layer has a surface that has crystallographic properties suitable for epitaxial growth of a layer of a further material on the surface of the thin Ge containing layer.

摘要翻译： 提出了在Si衬底上形成含Ge层的方法。 该方法包括提供具有晶体取向的表面的晶体Si衬底，在真空环境中加热Si衬底，使用表面活性剂介质将Si衬底暴露于适合于在结晶Si上生长Ge的表面活性剂 ，然后使用合适的溅射技术在加热的Si衬底的表面上生长Ge含量层。 选择Ge含量层的生长条件使得在Si衬底的表面上形成含有薄的Ge含量层。 薄的Ge含有层具有适于在薄Ge含量层的表面上进一步材料层的外延生长的晶体学性质的表面。

公开(公告)号：US09450139B2

公开(公告)日：2016-09-20

申请号：US14978463

申请日：2015-12-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tetsuhiro Tanaka ,  Erika Kato

IPC分类号： H01L31/20 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66 ,  H01L31/0304 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/072 ,  H01L31/0735 ,  H01L31/113 ,  H01L31/18 ,  H01L31/105 ,  H01L29/786

CPC分类号： H01L31/20 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02592 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78696 ,  H01L31/0304 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/072 ,  H01L31/0735 ,  H01L31/105 ,  H01L31/1136 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1816 ,  H01L31/1824 ,  H01L31/1852 ,  H01L31/202 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

摘要翻译： 提供了一种用于形成含有杂质元素并具有低电阻率的非晶半导体的方法，以及制造具有优异的电特性，高产率的半导体器件的方法。 在利用等离子体CVD法形成含有杂质元素的非晶半导体的方法中，在可以获得根据帕邢定律的最小放电起始电压的压力和电极距离处的电极上施加脉冲调制放电初始电压 由此形成含有杂质元素并具有低电阻率的非晶半导体。

公开(公告)号：US20130295709A1

公开(公告)日：2013-11-07

申请号：US13900945

申请日：2013-05-23

申请人： TOHOKU UNIVERSITY ,  TOKYO ELECTRON LIMITED

发明人： Tadahiro OHMI ,  Akinobu TERAMOTO ,  Tetsuya GOTO ,  Kouji TANAKA

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  C23C16/24 ,  C23C16/511 ,  H01L31/028 ,  H01L31/04 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1816 ,  Y02E10/547 ,  Y02P70/521

摘要： “The invention provides a photoelectric conversion element manufacturing apparatus that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit which supplies plasma excitation gas to a plasma excitation region in the chamber, a pressure regulation unit which regulates pressure in the chamber, a second gas supply unit which supplies raw gas to a plasma diffusion region in the chamber, a microwave application unit which applies microwaves into the chamber, and a bias voltage application unit which selects and applies a substrate bias voltage to the substrate according to the type of gas.”

摘要翻译： “本发明提供了一种通过使用微波等离子体CVD在衬底上形成半导体叠层膜的光电转换元件制造装置，该装置包括：室，其是包含基底的封闭空间，在该室上形成用于形成薄膜的主题衬底 将等离子体激发气体供给到室内的等离子体激发区域的第一气体供给单元，调节室内的压力的压力调节单元，将原料气体供给到室内的等离子体扩散区域的第二气体供给单元 ，将微波施加到室中的微波应用单元，以及偏置电压施加单元，其根据气体类型选择并施加衬底偏置电压到衬底。

公开(公告)号：US20110259420A1

公开(公告)日：2011-10-27

申请号：US13087714

申请日：2011-04-15

申请人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Yoshiaki ITO ,  Takuro OHMARU

发明人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Yoshiaki ITO ,  Takuro OHMARU

IPC分类号： H01L31/0203

CPC分类号： H01L31/202 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02672 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/1816 ,  H02S40/32 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.

摘要翻译： 本发明的目的是减少不能到达的光电转换元件的区域，以抑制发电效率的劣化，并且抑制电压转换元件的制造成本。 本发明涉及一种透射光电转换装置，其包括：包括n型半导体层，本征半导体层和p型半导体层的光电转换元件; 电压转换元件，其与光电转换元件重叠并且包括用于沟道形成区域的氧化物半导体膜; 以及电连接光电转换元件和电压转换元件的导电元件。 光电转换元件是太阳能电池。 电压转换元件包括具有包括氧化物半导体膜的沟道形成区的晶体管。 电压转换元件是DC-DC转换器。

公开(公告)号：US20090301551A1

公开(公告)日：2009-12-10

申请号：US12466141

申请日：2009-05-14

申请人： Masud Akhtar ,  Alan E. Delahoy

发明人： Masud Akhtar ,  Alan E. Delahoy

IPC分类号： H01L31/04 ,  B05D3/14 ,  B32B9/04

CPC分类号： C23C16/24 ,  C23C16/452 ,  C23C16/45593 ,  H01L31/1816 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition. Optionally, an activated hydrogen-containing composition is introduced into the deposition chamber during film deposition. The activated hydrogen-containing composition is formed by exposing hydrogen gas to microwave radiation.

摘要翻译： 用于在衬底上沉积硅膜的方法包括使第一含硅气体组合物流过所产生的放电以形成与第一含硅组合物不同的第二含硅组合物的步骤。 将第二组合物引导到沉积室中以在位于沉积室内的一个或多个基底上形成含硅膜。 结晶硅的形成由沉积物的温度控制。 任选地，在膜沉积期间将活化的含氢组合物引入沉积室。 活化的含氢组合物通过将氢气暴露于微波辐射而形成。

公开(公告)号：US20050028860A1

公开(公告)日：2005-02-10

申请号：US10935173

申请日：2004-09-08

申请人： Masafumi Sano ,  Tetsuro Nakamura

发明人： Masafumi Sano ,  Tetsuro Nakamura

IPC分类号： H01L31/04 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/1816 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： [Problem(s)] A stacked photovoltaic device can be provided which is practicable and low-cost and yet has a high reliability, and also has a high photoelectric conversion efficiency. [Means for Solving the Problem] A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon type non-single-crystal semiconductors. An amorphous silicon is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon is used as the i-type layer of a third p-i-n junction, the first to third layers being in the order from the light-incident side.

摘要翻译： [问题]可以提供切实可行且成本低并且具有高可靠性并且还具有高光电转换效率的叠层光伏器件。 解决问题的手段堆叠式光伏器件包括层叠的至少三个pin结构成器件，每个具有由硅型非晶硅层形成的p型层，i型层和n型层， 单晶半导体。 非晶硅用作第一pin结的i型层，微晶硅用作第二pin结的i型层，微晶硅用作第三pin结的i型层 第一至第三层的顺序为光入射侧。

公开(公告)号：US20030213515A1

公开(公告)日：2003-11-20

申请号：US10422171

申请日：2003-04-23

申请人： CANON KABUSHIKI KAISHA

发明人： Masafumi Sano ,  Tetsuro Nakamura

IPC分类号： H01L031/00

CPC分类号： H01L31/076 ,  H01L31/1816 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.