公开(公告)号：US20230175115A1

公开(公告)日：2023-06-08

申请号：US17922255

申请日：2021-03-29

申请人： TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

发明人： Shuji AZUMO ,  Kota UMEZAWA ,  Katsutoshi ISHII ,  Akira SHIMIZU ,  Akinobu TERAMOTO ,  Tomoyuki SUWA ,  Yasuyuki SHIRAI ,  Takezo MAWAKI

IPC分类号： C23C16/02 ,  H01L21/02 ,  H01L21/285 ,  C23C16/34 ,  C23C16/40 ,  C23C16/36 ,  C23C16/18 ,  C23C16/455

CPC分类号： C23C16/02 ,  H01L21/0206 ,  H01L21/02312 ,  H01L21/02205 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02181 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/28568 ,  C23C16/34 ,  C23C16/401 ,  C23C16/36 ,  C23C16/345 ,  C23C16/403 ,  C23C16/405 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/02271 ,  H01L21/0228

摘要： A selective film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively adsorbing a secondary alcohol gas and/or a tertiary alcohol gas to the second surface; and selectively forming a film on the first surface by supplying at least a raw material gas.

公开(公告)号：US20190074177A1

公开(公告)日：2019-03-07

申请号：US16123416

申请日：2018-09-06

申请人： TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

发明人： Akira SHIMIZU ,  Katsutoshi ISHII ,  Akinobu TERAMOTO ,  Tomoyuki SUWA ,  Yoshinobu SHIBA

IPC分类号： H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/48

摘要： There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container, a precursor gas supply part configured to supply a precursor gas into the processing container, a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container, and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

公开(公告)号：US20130295709A1

公开(公告)日：2013-11-07

申请号：US13900945

申请日：2013-05-23

申请人： TOHOKU UNIVERSITY ,  TOKYO ELECTRON LIMITED

发明人： Tadahiro OHMI ,  Akinobu TERAMOTO ,  Tetsuya GOTO ,  Kouji TANAKA

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  C23C16/24 ,  C23C16/511 ,  H01L31/028 ,  H01L31/04 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1816 ,  Y02E10/547 ,  Y02P70/521

摘要： “The invention provides a photoelectric conversion element manufacturing apparatus that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit which supplies plasma excitation gas to a plasma excitation region in the chamber, a pressure regulation unit which regulates pressure in the chamber, a second gas supply unit which supplies raw gas to a plasma diffusion region in the chamber, a microwave application unit which applies microwaves into the chamber, and a bias voltage application unit which selects and applies a substrate bias voltage to the substrate according to the type of gas.”

摘要翻译： “本发明提供了一种通过使用微波等离子体CVD在衬底上形成半导体叠层膜的光电转换元件制造装置，该装置包括：室，其是包含基底的封闭空间，在该室上形成用于形成薄膜的主题衬底 将等离子体激发气体供给到室内的等离子体激发区域的第一气体供给单元，调节室内的压力的压力调节单元，将原料气体供给到室内的等离子体扩散区域的第二气体供给单元 ，将微波施加到室中的微波应用单元，以及偏置电压施加单元，其根据气体类型选择并施加衬底偏置电压到衬底。

公开(公告)号：US20140367699A1

公开(公告)日：2014-12-18

申请号：US14474835

申请日：2014-09-02

申请人： TOHOKU UNIVERSITY ,  FUJI ELECTRIC CO., LTD. ,  TOKYO ELECTRON LIMITED

发明人： Akinobu TERAMOTO ,  Hiroshi KAMBAYASHI ,  Hirokazu UEDA ,  Yuichiro MOROZUMI ,  Katsushige HARADA ,  Kazuhide HASEBE ,  Tadahiro OHMI

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L21/28 ,  H01L23/00 ,  H01L29/51 ,  H01L29/778

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

摘要翻译： 制造半导体器件的方法是制造包括构成半导体层的GaN（氮化镓）的半导体器件，并且包括形成栅极绝缘膜的步骤。 在该步骤中，通过使用微波等离子体在包含GaN的氮化物层上形成选自由SiO 2膜和Al 2 O 3膜构成的组中的至少一种膜，并且所形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US20130307063A1

公开(公告)日：2013-11-21

申请号：US13950079

申请日：2013-07-24

申请人： TOHOKU UNIVERSITY ,  ADVANCED POWER DEVICE RESEARCH ASSOCIATION

发明人： Hiroshi KAMBAYASHI ,  Akinobu TERAMOTO ,  Tadahiro OHMI

IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L29/78

CPC分类号： H01L21/30604 ,  H01L21/02057 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/302 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7783 ,  H01L29/7827

摘要： Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.

摘要翻译： 提供一种制造氮化镓基半导体器件的方法，包括形成氮化镓基半导体的第一半导体层; 以及通过使用溴基气体的微波等离子体处理方法将所述第一半导体层的一部分干蚀刻而形成凹部。

公开(公告)号：US20190390332A1

公开(公告)日：2019-12-26

申请号：US16480942

申请日：2017-02-14

申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation ,  Tohoku University

发明人： Shinichi NISHIMURA ,  Kensuke WATANABE ,  Yoshihito YAMADA ,  Akinobu TERAMOTO ,  Tomoyuki SUWA ,  Yoshinobu SHIBA

IPC分类号： C23C16/34 ,  H01L21/02 ,  C23C16/46 ,  C23C16/503

摘要： A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.

公开(公告)号：US20200335322A1

公开(公告)日：2020-10-22

申请号：US16807717

申请日：2020-03-03

申请人： TOHOKU UNIVERSITY ,  NIPPON SHOKUBAI CO., LTD.

发明人： Akinobu TERAMOTO ,  Yoshinobu SHIBA ,  Takashi ABE ,  Akira NISHIMURA

IPC分类号： H01L21/02

摘要： A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula SinH2n, wherein n is 5, 6, or 7.

公开(公告)号：US20130309828A1

公开(公告)日：2013-11-21

申请号：US13950050

申请日：2013-07-24

申请人： Tohoku University ,  Advanced Power Device Research Association

发明人： Hiroshi KAMBAYASHI ,  Akinobu TERAMOTO ,  Tadahiro OHMI

IPC分类号： H01L29/66

CPC分类号： H01L29/66666 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7783 ,  H01L29/7786

摘要： Provided is a semiconductor device manufacturing method, comprising forming a first sacrificial layer that contacts at least a portion of a first semiconductor layer and has a higher solid solubility for impurities included in the first semiconductor layer than the first semiconductor layer; annealing the first sacrificial layer and the first semiconductor layer; removing the first sacrificial layer through a wet process; after removing the first sacrificial layer, performing at least one of forming an insulating layer that covers at least a portion of the first semiconductor layer and etching a portion of the first semiconductor layer; and forming an electrode layer that is electrically connected to the first semiconductor layer.

摘要翻译： 提供一种半导体器件制造方法，包括：形成第一牺牲层，其与第一半导体层的至少一部分接触，并且对于包含在第一半导体层中的杂质比对第一半导体层具有更高的固体溶解度; 退火所述第一牺牲层和所述第一半导体层; 通过湿法去除第一牺牲层; 在去除第一牺牲层之后，执行形成覆盖第一半导体层的至少一部分并蚀刻第一半导体层的一部分的绝缘层中的至少一个; 以及形成电连接到所述第一半导体层的电极层。

公开(公告)号：US20160276171A1

公开(公告)日：2016-09-22

申请号：US14856885

申请日：2015-09-17

申请人： National University Corporation Tohoku University

发明人： Tadahiro OHMI ,  Akinobu TERAMOTO ,  Tomoyuki SUWA

IPC分类号： H01L21/324 ,  H01L21/67

CPC分类号： H01L21/3247 ,  F27B17/0025 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/302 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67757

摘要： In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

摘要翻译： 在具有分别通过单原子层阶梯逐步形成的多个台阶的表面的硅晶片中，不形成滑移线。