公开(公告)号：US10074758B2

公开(公告)日：2018-09-11

申请号：US15121777

申请日：2015-03-04

申请人： HELMHOLTZ-ZENTRUM FÜR MATERIALIEN UND ENERGIE GMBH

发明人： Daniel Amkreutz ,  Jan Haschke ,  Bernd Rech

IPC分类号： H01L31/0392 ,  H01L31/0445 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/20 ,  H01L31/0368 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0288

CPC分类号： H01L31/03921 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/0445 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/1868 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which include a contact system being arranged on the back so as to collect excess charge carriers generated by the incidence of light in the absorber layer; a barrier layer having a layer thickness in a range of from 50 nm to 1 μm formed on a glass substrate; at least one coating layer intended for optical coating; and thin layer containing silicon and/or oxygen adjoining the crystalline Si absorber layer arranged on the at least one coating layer for improving the optical characteristics. The crystalline Si absorber layer can be produced by means of liquid-phase crystallization, is n-conducting, and has monocrystalline Si grains. An SiO2 passivation layer is formed between the layer containing silicon and/or oxygen and the Si absorber layer during the liquid-phase crystallization.

公开(公告)号：US20170345851A1

公开(公告)日：2017-11-30

申请号：US15169477

申请日：2016-05-31

申请人： OMNIVISION TECHNOLOGIES, INC.

发明人： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC分类号： H01L27/146 ,  H01L31/0392 ,  H01L31/18

CPC分类号： H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/03921 ,  H01L31/1812

摘要： An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface. The semiconductor material includes silicon and germanium, and the germanium concentration increases in a direction of the non-illuminated surface. A plurality of isolation regions is disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

公开(公告)号：US20170229603A1

公开(公告)日：2017-08-10

申请号：US15497310

申请日：2017-04-26

申请人： International Business Machines Corporation

发明人： Bahman Hekmatshoartabari ,  Ning Li ,  Katherine L. Saenger

IPC分类号： H01L31/18 ,  H01L31/0352 ,  H01L31/0445 ,  H01L31/0224

CPC分类号： H01L31/1868 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/186 ,  H02S50/10 ,  Y02E10/547 ,  Y02P70/521

摘要： After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.

公开(公告)号：US09698299B2

公开(公告)日：2017-07-04

申请号：US14580692

申请日：2014-12-23

申请人： Sol Chip Ltd.

发明人： Shani Keysar ,  Reuven Holzer ,  Ofer Navon ,  Ram Friedlander

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L25/16 ,  H01L27/118 ,  H01L27/142 ,  H01L31/0392 ,  H01L31/046 ,  H01L25/00 ,  H01L31/0465 ,  H01L23/00

CPC分类号： H01L31/18 ,  H01L24/05 ,  H01L25/16 ,  H01L25/50 ,  H01L27/118 ,  H01L27/11898 ,  H01L27/142 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/046 ,  H01L31/0465 ,  H01L2224/05571 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/14 ,  H01L2924/1461 ,  Y02E10/50 ,  Y02E10/541 ,  Y02P70/521 ,  H01L2224/05552 ,  H01L2924/00

摘要： A device having a plurality of thin film photovoltaic cells (PV) formed over a passivation layer. The device comprises a plurality of thin film photovoltaic (PV) cells formed over the passivation layer, each PV cell includes at least a lower conducting layer (LCL) and an upper conducting layer (UCL); and a conducting path connecting at least a UCL of a first PV cell to at least a LCL of a second PV cell, wherein at least a first array of PV cells comprised of at least a first portion of the plurality of PV cells is connected by the respective UCL and LCL of each PV cell to provide a first voltage output. In an embodiment the passivation layer is formed over a target integrated circuit (TIC), the TIC having a top surface and a bottom surface.

公开(公告)号：US20170162743A1

公开(公告)日：2017-06-08

申请号：US15441345

申请日：2017-02-24

申请人： GLOBALFOUNDRIES INC.

发明人： Steven M. Shank ,  John J. Ellis-Monaghan ,  Marwan H. Khater ,  Jason S. Orcutt

IPC分类号： H01L31/18 ,  H01L31/103 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/0312

CPC分类号： H01L31/1812 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/1037 ,  H01L31/109 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50

摘要： Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.

公开(公告)号：US09583647B2

公开(公告)日：2017-02-28

申请号：US14152409

申请日：2014-01-10

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Tomoyuki Komori ,  Hidekazu Arase

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0392

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/0392 ,  H01L31/03921 ,  Y02E10/50

摘要： A solar cell element includes: a transparent body; a MgxAg1-x layer (0.001≦x≦0.045) having a thickness (2-13 nm); a ZnO layer having an arithmetical mean (Ra: 20-870 nm); and a transparent conductive layer. A photoelectric conversion layer including n-type and p-type layers further includes n-side and p-side electrodes. The ZnO layer is composed of ZnO columnar crystal grains grown on the MgxAg1-x layer, and each ZnO grain has a longitudinal direction along a normal line of the body, has a width increasing from the MgxAg1-x layer toward the transparent conductive layer, has a width which appears by cutting each ZnO grain along the normal line, and has a R2/R1 ratio (1.1-1.8). R1 represents the width of one end of the ZnO grain, and the one end is in contact with the surface of the MgxAg1-x layer, and R2 represents the width of the other end of the ZnO grain.

摘要翻译： 太阳能电池元件包括：透明体; 具有厚度（2-13nm）的MgxAg1-x层（0.001≤x≤0.045）; 具有算术平均值（Ra：20-870nm）的ZnO层; 和透明导电层。 包括n型和p型层的光电转换层还包括n侧和p侧电极。 ZnO层由在MgxAg1-x层上生长的ZnO柱状晶粒构成，ZnO粒子沿着身体的法线具有长度方向，宽度从Mg x Ag 1-x层朝向透明导电层增加， 具有通过沿着法线切割每个ZnO晶粒而出现的宽度，并且具有R2 / R1比（1.1-1.8）。 R1表示ZnO晶粒的一端的宽度，一端与Mg x Ag 1-x层的表面接触，R2表示ZnO晶粒的另一端的宽度。

公开(公告)号：US09548409B2

公开(公告)日：2017-01-17

申请号：US14459062

申请日：2014-08-13

申请人： SunPower Corporation

发明人： Peter John Cousins

IPC分类号： H01L31/028 ,  H01L31/0392 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/074

CPC分类号： H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/074 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/548 ,  Y02P70/521

摘要： A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

摘要翻译： 硅太阳能电池已经在硅衬底的表面上形成在隧道氧化硅层上的掺杂非晶硅接触。 制造太阳能电池时不需要高温处理。

公开(公告)号：US20160351734A1

公开(公告)日：2016-12-01

申请号：US14747954

申请日：2015-06-23

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Talia S. Gershon ,  Richard A. Haight ,  Jeehwan Kim ,  Yun Seog Lee

IPC分类号： H01L31/0236 ,  H01L31/18 ,  H01L31/036

CPC分类号： H01L31/02366 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/036 ,  H01L31/03921 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/208 ,  Y02E10/50

摘要： A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

摘要翻译： 用于纹理化硅的方法包括将硅晶片加载到真空室中，加热硅晶片并热裂解气体以产生裂化的硫物质。 硅晶片根据硅晶片表面所需的纹理特性暴露于裂化的硫物质持续一段时间。

公开(公告)号：US09490379B2

公开(公告)日：2016-11-08

申请号：US12974794

申请日：2010-12-21

申请人： Mincheol Kim ,  Haeyeol Kim ,  Seongkee Park ,  Jungshik Lim ,  Miji Lee

发明人： Mincheol Kim ,  Haeyeol Kim ,  Seongkee Park ,  Jungshik Lim ,  Miji Lee

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/046

CPC分类号： H01L31/02366 ,  H01L31/022466 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/50 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin film solar cell comprises a substrate, an inorganic layer disposed on the substrate and having a plurality of unevenness, a first electrode disposed on the inorganic layer and having a plurality of second unevenness, an absorbing layer disposed on the first electrode, and a second electrode disposed on the absorbing layer.

摘要翻译： 薄膜太阳能电池包括基板，设置在基板上并具有多个凹凸的无机层，设置在无机层上并具有多个第二凹凸的第一电极，设置在第一电极上的吸收层，以及 设置在吸收层上的第二电极。

公开(公告)号：US20160197575A1

公开(公告)日：2016-07-07

申请号：US14987214

申请日：2016-01-04

申请人： Ascent Solar Technologies, Inc.

发明人： Joseph H. Armstrong ,  Stephanie Persha Retureta ,  Inbo Lee ,  Rafael Eduardo Gutierrez

IPC分类号： H02S10/40 ,  H01L31/0392 ,  H02J7/35 ,  H02J7/00 ,  H02S30/20 ,  H02B1/28

CPC分类号： H02S10/40 ,  H01L31/03921 ,  H01L31/03926 ,  H01L31/03928 ,  H02B1/28 ,  H02J7/0029 ,  H02J7/355 ,  H02J2007/0039 ,  H02S30/20

摘要： A photovoltaic-based fully integrated portable power system includes (1) an integrated power management, storage, and distribution (MSD) subsystem including a case having an opening, (2) a flexible photovoltaic module capable of being disposed in at least a folded position and an unfolded position, where a portion of the flexible photovoltaic module is disposed over the opening of the case, and (3) a mounting plate disposed on the flexible photovoltaic module and over the opening of the case, such that the portion of the flexible photovoltaic module is sandwiched between the MSD subsystem and the mounting plate.

摘要翻译： 一种基于光伏的完全集成的便携式电力系统包括（1）包括具有开口的壳体的集成电力管理，存储和分配（MSD）子系统，（2）能够至少设置在折叠位置的柔性光伏模块 以及展开位置，其中柔性光伏模块的一部分设置在壳体的开口上，以及（3）安装板，其设置在柔性光伏模块上并且在壳体的开口上方，使得柔性光伏模块的一部分 光伏模块夹在MSD子系统和安装板之间。