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    CHALCOPYRITE-PEROVSKITE PN-JUNCTION THIN-FILM PHOTOVOLTAIC DEVICE
    1.
    发明申请
    CHALCOPYRITE-PEROVSKITE PN-JUNCTION THIN-FILM PHOTOVOLTAIC DEVICE 审中-公开

    公开(公告)号：US20200082995A1

    公开(公告)日：2020-03-12

    申请号：US16562895

    申请日：2019-09-06

    申请人： Ascent Solar Technologies, Inc.

    发明人： Lawrence M. Woods

    IPC分类号： H01G9/20 ,  H01G9/00 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00

    摘要： A thin-film photovoltaic device includes: a substrate for supporting the thin-film photovoltaic device; a back contact layer disposed on the substrate; a p-type solar absorber layer disposed on the back contact layer, the p-type solar absorber layer including one of a Group IB-IIIA-VIA.sub.2 material and a IIB-VIA material; an n-type solar absorber layer disposed on and in contact with the p-type solar absorber layer, the n-type solar absorber layer including one of a Group IA-IVA-VIIA.sub.3 material, a Group IA.sub.2.-IVA-VIIA.sub.6, and a Group I.sub.2.-I-IIIA-VIIA.sub.6 material; and a semi-transparent top contact layer disposed on the n-type solar absorber layer.

    Hybrid multi-junction photovoltaic cells and associated methods
    3.
    发明授权
    Hybrid multi-junction photovoltaic cells and associated methods 有权
    混合多结光伏电池及相关方法

    公开(公告)号：US09349905B2

    公开(公告)日：2016-05-24

    申请号：US14100960

    申请日：2013-12-09

    申请人： Ascent Solar Technologies, Inc.

    发明人： Lawrence M. Woods ,  Rosine M. Ribelin ,  Prem Nath

    IPC分类号： H01L31/18 ,  H01L21/385 ,  H01L31/0725 ,  H01L21/02 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/073 ,  H01L31/046

    CPC分类号： H01L31/18 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/385 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/046 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

    摘要翻译： 多结光伏电池包括在基板上形成的基板和背接触层。 在背面接触层上形成低带隙IB-IIIB-VIB2族材料太阳能吸收层。 异质结伙伴层形成在低带隙太阳能吸收层上，以帮助形成底部电池结，异质结伙伴层包括至少一层具有至少100欧姆 - 厘米电阻率的高电阻率材料层。 高电阻率材料具有式（Zn和/或Mg）（S，Se，O和/或OH）。 在异质结伙伴层之上形成导电互连层，并且在导电互连层上形成至少一个附加的单结光伏电池作为顶部电池。 顶部单元可以具有非晶硅或p型硒化镉太阳能吸收层。 硒化镉可以用氯化物掺杂工艺从n型转变成p型。

    Array Of Monolithically Integrated Thin Film Photovoltaic Cells And Associated Methods
    5.
    发明申请
    Array Of Monolithically Integrated Thin Film Photovoltaic Cells And Associated Methods 有权
    单片集成薄膜光伏电池阵列及相关方法

    公开(公告)号：US20140227823A1

    公开(公告)日：2014-08-14

    申请号：US14252485

    申请日：2014-04-14

    申请人： Ascent Solar Technologies, Inc.

    发明人： Mohan S. Misra ,  Prem Nath ,  Venugopala R. Basava

    IPC分类号： H01L31/18 ,  H01L31/05

    CPC分类号： H01L31/1876 ,  H01L31/0465 ,  H01L31/05 ,  Y02E10/50

    摘要： A process of forming an array of monolithic ally integrated thin film photo voltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

    摘要翻译： 由形成在绝缘基板上的薄膜层堆叠形成单片式集成薄膜光伏电池阵列的工艺包括在薄膜层堆叠中形成至少一个电池隔离划线。 为每个细胞分离划片形成第二电接触层隔离划片，其邻近相应的细胞隔离划痕。 在每个电池隔离划线片及其各自的第二电接触层隔离划片之间的薄膜层堆叠中形成通孔划线。 绝缘油墨设置在每个单元隔离划线中，并且导电油墨设置在每个通孔划片中以形成通孔。 导电油墨也沿着薄膜层堆叠的顶表面设置以形成至少一个导电栅格。

    Systems And Methods For Thermally Managing High-Temperature Processes On Temperature Sensitive Substrates
    6.
    发明申请
    Systems And Methods For Thermally Managing High-Temperature Processes On Temperature Sensitive Substrates 有权
    温度敏感基板高温处理系统和方法

    公开(公告)号：US20140193942A1

    公开(公告)日：2014-07-10

    申请号：US14150376

    申请日：2014-01-08

    申请人： Ascent Solar Technologies, Inc.

    发明人： Lawrence M. Woods ,  Rosine Ribelin ,  Joseph H. Armstrong

    IPC分类号： H01L31/18

    CPC分类号： H01L31/18 ,  C23C14/0021 ,  C23C14/20 ,  C23C14/541 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/67115 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541

    摘要： A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters.

    摘要翻译： 在具有相对的前外表面的柔性聚酰亚胺基板上沉积一层或多层薄膜层的方法包括以下步骤：（a）加热柔性聚酰亚胺基板，使得柔性聚酰亚胺基板的前外表面的温度 高于柔性聚酰亚胺基板的后外表面的温度，和（b）在柔性聚酰亚胺基板的前外表面上沉积一个或多个薄膜层。 用于执行该方法的沉积区域包括（a）适于在衬底的前外表面上沉积一种或多种金属材料的更多物理气相沉积源中的一种，和（b）一个或多个辐射区边界加热器。