公开(公告)号：US09209322B2

公开(公告)日：2015-12-08

申请号：US14210209

申请日：2014-03-13

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong

IPC: H01L31/0224 ,  H01L31/0392

CPC classification number: H01L31/022425 ,  H01L31/03923 ,  H01L31/03926 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract translation: 用于光电元件的聚合物基板和背接触结构，以及光电元件包括​​CIGS光伏结构，具有光电元件可以被定位的器件侧的聚合物基板和与器件侧相对的背面。 在聚合物基材的背面形成介电层。 在聚合物基板的器件侧形成金属结构。

公开(公告)号：US09219179B2

公开(公告)日：2015-12-22

申请号：US14198209

申请日：2014-03-05

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong

IPC: H01L21/00 ,  H01L31/0264 ,  H01L31/0392 ,  H01L31/0224 ,  H01L21/02

CPC classification number: H01L31/0264 ,  H01L21/02485 ,  H01L31/022425 ,  H01L31/03923 ,  H01L31/03926 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

公开(公告)号：US20140186993A1

公开(公告)日：2014-07-03

申请号：US14198209

申请日：2014-03-05

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong

IPC: H01L31/0264

CPC classification number: H01L31/0264 ,  H01L21/02485 ,  H01L31/022425 ,  H01L31/03923 ,  H01L31/03926 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract translation: 用于光电元件的聚合物基板和背接触结构，以及光电元件包括​​CIGS光伏结构，具有光电元件可以被定位的器件侧的聚合物基板和与器件侧相对的背面。 在聚合物基材的背面形成介电层。 在聚合物基板的器件侧形成金属结构。

公开(公告)号：US09583657B2

公开(公告)日：2017-02-28

申请号：US14932933

申请日：2015-11-04

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong ,  Richard Thomas Treglio

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L31/0392 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0216 ,  H01L31/18

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

公开(公告)号：US20160056314A1

公开(公告)日：2016-02-25

申请号：US14932933

申请日：2015-11-04

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong ,  Richard Thomas Treglio

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/03928 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03926 ,  H01L31/18 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract translation: 用于光电元件的聚合物基板和背接触结构，以及光电元件包括​​CIGS光伏结构，具有光电元件可以被定位的器件侧的聚合物基板和与器件侧相对的背面。 电介质层任选形成在聚合物基片的背面。 在聚合物基板的器件侧形成金属结构。

公开(公告)号：US09780242B2

公开(公告)日：2017-10-03

申请号：US14932933

申请日：2015-11-04

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong ,  Richard Thomas Treglio

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L31/0392 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/03928 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03926 ,  H01L31/18 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

公开(公告)号：US20140193944A1

公开(公告)日：2014-07-10

申请号：US14210209

申请日：2014-03-13

Applicant: ASCENT SOLAR TECHNOLOGIES, INC.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong

IPC: H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/03923 ,  H01L31/03926 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.