公开(公告)号：US20170236710A1

公开(公告)日：2017-08-17

申请号：US15584241

申请日：2017-05-02

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Joseph H. Armstrong ,  Richard Thomas Treglio ,  John L. Harrington

IPC: H01L21/02 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L21/02568 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/18 ,  Y02E10/541

Abstract: A system for manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS. In a particular embodiment, a special selenium or tellurium source, valve and delivery subsystem is made of quartz, graphite, coated graphite, or molybdenum. In a particular embodiment, an ion-beam source module configured for surface smoothing the solar absorber sublayer surface before passing through the final deposition zone.

公开(公告)号：US09780242B2

公开(公告)日：2017-10-03

申请号：US14932933

申请日：2015-11-04

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong ,  Richard Thomas Treglio

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L31/0392 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/03928 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03926 ,  H01L31/18 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

公开(公告)号：US09601650B1

公开(公告)日：2017-03-21

申请号：US13794009

申请日：2013-03-11

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Joseph H. Armstrong ,  Richard Thomas Treglio ,  John L. Harrington

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method of manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.

公开(公告)号：US09583657B2

公开(公告)日：2017-02-28

申请号：US14932933

申请日：2015-11-04

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong ,  Richard Thomas Treglio

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L31/0392 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0216 ,  H01L31/18

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

公开(公告)号：US20160380123A1

公开(公告)日：2016-12-29

申请号：US15258169

申请日：2016-09-07

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Richard Thomas Treglio ,  Joseph H. Armstrong

IPC: H01L31/02 ,  H01L31/046 ,  H01L31/032

CPC classification number: H01L31/0322 ,  H01L31/022425 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541

Abstract: A photovoltaic element includes a polymer substrate having opposing device and back sides, and having a coefficient of thermal expansion of at least 4 parts per million per degree Celsius but not exceeding 12 parts per million per degree Celsius. A metal structure is disposed on the device side of the polymer substrate, and the metal structure includes (a) a transition-metal-based layer disposed on the polymer substrate, (b) an aluminum-based barrier layer disposed on the transition-metal-based layer, and (c) a molybdenum-based cap layer disposed on the aluminum-based barrier layer. A CIGS photovoltaic structure is disposed on the molybdenum-based cap layer.

Abstract translation: 光电元件包括​​具有相对的装置和背面的聚合物基板，并且其热膨胀系数为每摄氏度至少4百万分之一，但不超过每百万摄氏度百万分之一。 金属结构设置在聚合物基板的器件侧，金属结构体包括（a）设置在聚合物基板上的过渡金属基层，（b）设置在过渡金属上的铝基阻挡层 （c）设置在铝基阻挡层上的钼基覆盖层。 CIGS光伏结构设置在钼基覆盖层上。

公开(公告)号：US20160056314A1

公开(公告)日：2016-02-25

申请号：US14932933

申请日：2015-11-04

Applicant: Ascent Solar Technologies, Inc.

Inventor： Lawrence M. Woods ,  Hobart Stevens ,  Joseph H. Armstrong ,  Richard Thomas Treglio

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/03928 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03926 ,  H01L31/18 ,  Y02E10/541

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract translation: 用于光电元件的聚合物基板和背接触结构，以及光电元件包括​​CIGS光伏结构，具有光电元件可以被定位的器件侧的聚合物基板和与器件侧相对的背面。 电介质层任选形成在聚合物基片的背面。 在聚合物基板的器件侧形成金属结构。