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公开(公告)号：US10290670B2
公开(公告)日：2019-05-14
申请号：US15195926
申请日：2016-06-28
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson H. Tai , Lequn Liu
IPC分类号： H01L27/146
摘要： A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
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公开(公告)号：US10147751B2
公开(公告)日：2018-12-04
申请号：US15945530
申请日：2018-04-04
发明人： Chia-Chun Miao , Yin Qian , Chao-Hung Lin , Chen-Wei Lu , Dyson H. Tai , Ming Zhang , Jin Li
IPC分类号： H01L31/0203 , H01L27/146
摘要： A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.
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公开(公告)号：US10044960B2
公开(公告)日：2018-08-07
申请号：US15164276
申请日：2016-05-25
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
摘要： An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
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公开(公告)号：US09986192B1
公开(公告)日：2018-05-29
申请号：US15362402
申请日：2016-11-28
发明人： Dyson H. Tai , Duli Mao , Vincent Venezia , Gang Chen , Chih-Wei Hsiung
IPC分类号： H04N5/378 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.
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公开(公告)号：US20180098008A1
公开(公告)日：2018-04-05
申请号：US15285352
申请日：2016-10-04
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin
IPC分类号： H04N5/361 , H04N5/374 , H04N5/378 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14636 , H01L27/14656 , H04N5/374 , H04N5/378
摘要： Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.
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公开(公告)号：US09881963B1
公开(公告)日：2018-01-30
申请号：US15263936
申请日：2016-09-13
发明人： Gang Chen , Eric A. G. Webster , Duli Mao , Vincent Venezia , Dyson H. Tai
IPC分类号： H01L27/00 , H01L27/146 , H01L31/107
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14634 , H01L27/14683 , H01L31/107
摘要： An avalanche photodiode sensor includes a plurality of avalanche photodiodes disposed in a semiconductor material where individual avalanche photodiodes in the plurality of avalanche photodiodes have an internal electric field parallel with a first surface of the semiconductor material. The individual avalanche photodiodes in the plurality of avalanche photodiodes include a p-doped semiconductor region which extends into the semiconductor material, and an n-doped semiconductor region which extends into the semiconductor material. The internal electric field extends between the p-doped semiconductor region and the n-doped semiconductor region. Processing methods as examples are also proposed.
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公开(公告)号：US09881955B2
公开(公告)日：2018-01-30
申请号：US14882832
申请日：2015-10-14
发明人： Dajiang Yang , Gang Chen , Duli Mao , Dyson H. Tai
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/1461 , H01L27/14627 , H01L27/1463
摘要： A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.
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公开(公告)号：US20170347047A1
公开(公告)日：2017-11-30
申请号：US15164276
申请日：2016-05-25
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
CPC分类号： H04N5/374 , H01L27/14612 , H01L27/14641 , H04N5/23229 , H04N5/3559 , H04N5/3592 , H04N5/37452 , H04N5/37457
摘要： An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
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公开(公告)号：US20170162621A1
公开(公告)日：2017-06-08
申请号：US14957464
申请日：2015-12-02
发明人： Yin Qian , Dyson H. Tai , Chia-Chun Miao , Chen-Wei Lu
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/1463 , H01L27/14636 , H01L27/14643 , H01L27/14685
摘要： An image sensor includes a plurality of photodiodes disposed in a semiconductor layer, a first isolation layer, and a dielectric filler. The dielectric filler is disposed in a trench in the first isolation layer, and the first isolation layer is disposed between the semiconductor layer and the dielectric filler. At least one additional isolation layer is disposed proximate to the first isolation layer, and a plurality of light channels in the at least one additional isolation layer extend through the at least one additional isolation layer to the dielectric filler. The plurality of light channels is disposed to direct light into the plurality of photodiodes.
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公开(公告)号：US09674493B2
公开(公告)日：2017-06-06
申请号：US14222901
申请日：2014-03-24
发明人： Jin Li , Yin Qian , Gang Chen , Dyson H. Tai
IPC分类号： H04N3/14 , H04N9/04 , H01L27/146
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/14649
摘要： An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality of pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.
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