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    VERTICAL TRANSFER GATE DOPING DISTRIBUTION FOR CHARGE TRANSFER FROM A PHOTODIODE
    1.
    发明公开
    VERTICAL TRANSFER GATE DOPING DISTRIBUTION FOR CHARGE TRANSFER FROM A PHOTODIODE 审中-公开

    公开(公告)号：US20240304638A1

    公开(公告)日：2024-09-12

    申请号：US18180037

    申请日：2023-03-07

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hui Zang ,  Vincent Venezia

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14698

    Abstract: A pixel cell includes a photodiode disposed in a semiconductor material. A floating diffusion is disposed in the semiconductor material. A transfer gate includes a vertical transfer gate structure disposed in the semiconductor material between the photodiode and the floating diffusion. The transfer gate is coupled between the photodiode and the floating diffusion. A passivation layer is disposed in the semiconductor material and proximate to the vertical transfer gate. The passivation layer has a region with a non-uniformly distributed doping profile proximate to the vertical gate structure such that a first doping concentration of the region in the passivation layer proximate to the vertical gate structure along a first direction is less than a second doping concentration of the region in the passivation layer proximate to the vertical gate structure along a second direction.

    High dynamic range split pixel CMOS image sensor with low color crosstalk
    2.
    发明授权
    High dynamic range split pixel CMOS image sensor with low color crosstalk 有权

    公开(公告)号：US11527569B2

    公开(公告)日：2022-12-13

    申请号：US16877077

    申请日：2020-05-18

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Duli Mao ,  Bill Phan ,  Keiji Mabuchi ,  Seong Yeol Mun ,  Yuanliang Liu ,  Vincent Venezia

    IPC: H01L27/146 ,  H04N5/378

    Abstract: A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

    NEGATIVELY BIASED ISOLATION STRUCTURES FOR PIXEL DEVICES
    3.
    发明申请
    NEGATIVELY BIASED ISOLATION STRUCTURES FOR PIXEL DEVICES 有权

    公开(公告)号：US20210193703A1

    公开(公告)日：2021-06-24

    申请号：US16721320

    申请日：2019-12-19

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

    IPC: H01L27/146

    Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

    Negatively charged layer to reduce image memory effect
    6.
    发明授权
    Negatively charged layer to reduce image memory effect 有权
    负电荷层降低图像记忆效应

    公开(公告)号：US09105767B2

    公开(公告)日：2015-08-11

    申请号：US14331652

    申请日：2014-07-15

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

    IPC: H01L31/06 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/103

    CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

    Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. The first polarity charge layer is disposed between a first one of a plurality of passivation layers and a second one of the plurality of passivation layers disposed over the photodiode region.

    Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 第一极性电荷层设置在多个钝化层中的第一个和设置在光电二极管区域上的多个钝化层中的第二钝化层之间。

    NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT
    7.
    发明申请
    NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT 有权
    有意义的电荷层减少图像记忆效应

    公开(公告)号：US20140117485A1

    公开(公告)日：2014-05-01

    申请号：US13660774

    申请日：2012-10-25

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

    IPC: H01L31/0216

    CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

    Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.

    Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和接触蚀刻停止层之间的光电二极管区域之上。

    Image sensor with dual element color filter array and three channel color output
    8.
    发明授权
    Image sensor with dual element color filter array and three channel color output 有权
    图像传感器具有双元素滤色器阵列和三通道彩色输出

    公开(公告)号：US08670052B2

    公开(公告)日：2014-03-11

    申请号：US13686788

    申请日：2012-11-27

    Applicant: Omnivision Technologies, Inc.

    Inventor： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

    IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

    CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14643

    Abstract: A color image sensor includes a pixel array including a CFA overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors, second color filter elements of a second color overlaying a second group of the photo-sensors, and a plurality of filter stacks overlaying a third group of the photo-sensors. The first group generates first color signals of a first color channel and the second group generates second color signals of a second color channel. Each of the filter stacks includes a first stacked filter of the first color and a second stacked filter of the second color. A sensitivity of the filter stacks equals a product of sensitivities of the first and the second stacked filters and the filter stacks generate a third color channel.

    Abstract translation: 彩色图像传感器包括像素阵列，该像素阵列包括覆盖用于获取彩色图像的光电传感器阵列的CFA。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件，覆盖第二组光传感器的第二颜色的第二滤色器元件和覆盖第三组光电传感器的多个滤光片堆叠 光电传感器。 第一组产生第一颜色通道的第一颜色信号，第二组产生第二颜色通道的第二颜色信号。 每个过滤器堆叠包括第一颜色的第一堆叠过滤器和第二颜色的第二堆叠过滤器。 滤波器堆叠的灵敏度等于第一和第二堆叠滤波器的灵敏度的乘积，并且滤波器堆叠产生第三颜色通道。

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