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    NEGATIVELY BIASED ISOLATION STRUCTURES FOR PIXEL DEVICES
    1.
    发明申请
    NEGATIVELY BIASED ISOLATION STRUCTURES FOR PIXEL DEVICES 有权

    公开(公告)号：US20210193703A1

    公开(公告)日：2021-06-24

    申请号：US16721320

    申请日：2019-12-19

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

    IPC: H01L27/146

    Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

    Cross talk reduction for high dynamic range image sensors
    3.
    发明授权
    Cross talk reduction for high dynamic range image sensors 有权

    公开(公告)号：US10204951B2

    公开(公告)日：2019-02-12

    申请号：US15882925

    申请日：2018-01-29

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Hsin-Chih Tai ,  Lindsay Alexander Grant

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378

    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

    Negatively biased isolation structures for pixel devices
    7.
    发明授权
    Negatively biased isolation structures for pixel devices 有权

    公开(公告)号：US11502120B2

    公开(公告)日：2022-11-15

    申请号：US16721320

    申请日：2019-12-19

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

    IPC: H01L27/146

    Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

    Image sensor with two-dimensional split dual photodiode pairs
    10.
    发明授权
    Image sensor with two-dimensional split dual photodiode pairs 有权

    公开(公告)号：US10116889B2

    公开(公告)日：2018-10-30

    申请号：US15443783

    申请日：2017-02-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Qin Wang ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

    IPC: H04N5/335 ,  H04N5/369 ,  H04N5/378 ,  H04N9/04 ,  H04N5/374 ,  H04N5/232

    Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.

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