公开(公告)号：US20210193703A1

公开(公告)日：2021-06-24

申请号：US16721320

申请日：2019-12-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

IPC: H01L27/146

Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

公开(公告)号：US11502120B2

公开(公告)日：2022-11-15

申请号：US16721320

申请日：2019-12-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

IPC: H01L27/146

Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

公开(公告)号：US11165983B1

公开(公告)日：2021-11-02

申请号：US17066051

申请日：2020-10-08

Applicant: OmniVision Technologies, Inc.

Inventor： Geunsook Park ,  Chih-Wei Hsiung

IPC: H04N5/335 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/355 ,  H04N5/357

Abstract: An image sensor comprises a pixel array of pixel cells. A pixel cell comprises a photodiode, a reset transistor, a transfer transistor, at least one source follower transistor, a sample and hold circuit, an active reset transistor, and a readout transistor. A readout circuitry reads out image data from each columns of pixel cells. A column differential amplifier in the readout circuitry feeds back a column reset drive voltage to each pixel cells arranged in the same column. Signal data of each pixel cells in the same column are read out globally when all the active reset transistors are switched off. Determined by switching configurations of each active reset transistors of pixel cells in the same column, noise data of each pixel cells in the same column are read out either globally or row-by-row. Final image data is achieved by applying the method of correlated double sampling (CDS).