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    DUAL MODE STACKED PHOTOMULTIPLIERS SUITABLE FOR USE IN LONG RANGE TIME OF FLIGHT APPLICATIONS
    1.
    发明申请
    DUAL MODE STACKED PHOTOMULTIPLIERS SUITABLE FOR USE IN LONG RANGE TIME OF FLIGHT APPLICATIONS 审中-公开

    公开(公告)号：US20190302240A1

    公开(公告)日：2019-10-03

    申请号：US15937608

    申请日：2018-03-27

    Applicant: OmniVision Technologies, Inc.

    Inventor： Eric A. G. Webster ,  Olivier Bulteel

    IPC: G01S7/486 ,  G01S17/10

    Abstract: A photomultiplier pixel cell includes a photon detector coupled to detect an incident photon. A quenching circuit is coupled to quench an avalanche current in the photon detector. An enable circuit is coupled to the photon detector to enable and disable the photon detector in response to an enable signal. A buffer circuit is coupled to the photon detector to generate a digital output signal having a pulse width interval in response to the avalanche current triggered in the photon detector. A first one of a plurality of inputs of a digital-to-analog converter is coupled to the buffer circuit to receive a digital output signal. The digital-to-analog converter is coupled to generate an analog output signal having a magnitude that is responsive to a total number of digital output signals received concurrently within the pulse width interval at each one of the plurality of inputs of the digital-to-analog converter.

    Visible and infrared image sensor
    2.
    发明授权
    Visible and infrared image sensor 有权

    公开(公告)号：US10283553B2

    公开(公告)日：2019-05-07

    申请号：US15717071

    申请日：2017-09-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster ,  Howard E. Rhodes ,  Dominic Massetti

    IPC: H01L27/00 ,  H01L27/146 ,  H01L31/028

    Abstract: A method of image sensor fabrication includes forming a second semiconductor layer on a back side of a first semiconductor layer. The method also includes forming one or more groups of pixels disposed in a front side of the first semiconductor layer. The one or more groups of pixels include a first portion of pixels separated from the second semiconductor layer by a spacer region, and a second portion of pixels, where a first doped region of the second portion of pixels is in contact with the second semiconductor layer. Pinning wells are also formed and separate individual pixels in the one or more groups of pixels, and the pinning wells extend through the first semiconductor layer. Deep pinning wells are also formed and separate the one or more groups of pixels.

    Partitioned silicon photomultiplier with delay equalization
    3.
    发明授权
    Partitioned silicon photomultiplier with delay equalization 有权
    具有延迟均衡的分区硅光电倍增管

    公开(公告)号：US09082675B2

    公开(公告)日：2015-07-14

    申请号：US13964987

    申请日：2013-08-12

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster

    IPC: H01L27/144 ,  H01L27/146

    CPC classification number: H01L27/14634 ,  H01L27/144

    Abstract: A photon detection device includes a first wafer having an array of photon detection cells partitioned into a plurality of photon detection blocks arranged in the first wafer. A second wafer having a plurality of block readout circuits arranged thereon is also included. An interconnect wafer is disposed between the first wafer and the second wafer. The interconnect wafer includes a plurality of conductors having substantially equal lengths. Each one of the plurality of conductors is coupled between a corresponding one of the plurality of photon detection blocks in the first wafer and a corresponding one of the plurality of block readout circuits such that signal propagation delays between each one of the plurality of photon detection blocks and each one of the plurality of block readout circuits are substantially equal.

    Abstract translation: 光子检测装置包括具有分隔成布置在第一晶片中的多个光子检测块的光子检测单元阵列的第一晶片。 还包括具有布置在其上的多个块读出电路的第二晶片。 互连晶片设置在第一晶片和第二晶片之间。 互连晶片包括具有基本相等长度的多个导体。 多个导体中的每一个耦合在第一晶片中的多个光子检测块中的对应一个和多个块读出电路中的相应一个之间，使得多个光子检测块中的每一个之间的信号传播延迟 并且多个块读出电路中的每一个基本相等。

    Pixel for time-of-flight applications
    7.
    发明授权
    Pixel for time-of-flight applications 有权

    公开(公告)号：US11435452B2

    公开(公告)日：2022-09-06

    申请号：US16267162

    申请日：2019-02-04

    Applicant: OmniVision Technologies, Inc.

    Inventor： Eric A. G. Webster

    IPC: G01S7/4865 ,  G01S7/481 ,  G01S7/497 ,  G01S17/42 ,  G01S17/89 ,  G01S17/00

    Abstract: A time-of-flight (TOF) pixel includes a semiconductor material and a photogate disposed proximate to a frontside of the semiconductor material. The photogate is positioned to transfer charge in the semiconductor material toward the frontside in response to a voltage applied to the photogate. A floating diffusion is disposed in the semiconductor material proximate to the frontside of the semiconductor material, and one or more virtual phase implants is disposed in the semiconductor material proximate to the frontside of the semiconductor material. At least one of the one or more virtual phase implants extend laterally from under the photogate to the floating diffusion to transfer the charge to the floating diffusion.

    TIME OF FLIGHT CAMERA WITH PHOTON CORRELATION SUCCESSIVE APPROXIMATION
    8.
    发明申请
    TIME OF FLIGHT CAMERA WITH PHOTON CORRELATION SUCCESSIVE APPROXIMATION 审中-公开

    公开(公告)号：US20190132537A1

    公开(公告)日：2019-05-02

    申请号：US15798067

    申请日：2017-10-30

    Applicant: OmniVision Technologies, Inc.

    Inventor： Eric A. G. Webster

    IPC: H04N5/378 ,  G01S17/10 ,  G01S7/486 ,  G01S17/89 ,  H04N5/369

    Abstract: A time of flight camera includes a light source, a first pixel, a time-to-digital converting, and a controller. The light source is configured to emit light towards an object to be reflected back to the time of flight camera as image light. The first pixel includes a photodetector to detect the image light and to convert the image light into an electric signal. The time-to-digital converter is configured to generate timing signals representative of when the light source emits the light and when the photodetector detects the image light. The controller is coupled to the light source, the first pixel, and the time-to-digital converter. The controller includes logic that when executed causes the time of flight camera to perform operations. The operations include determining a detection window for a round-trip time of the image light based, at least in part, on the timing signals and first pulses of the light. The operations also include determining the round-trip time based, at least in part, on the timing signals and second pulses of the light detected within the detection window.

    Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications
    9.
    发明授权
    Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications 有权
    用于互补金属氧化物半导体堆叠芯片应用的单光子雪崩二极管成像传感器

    公开(公告)号：US09312401B2

    公开(公告)日：2016-04-12

    申请号：US14155848

    申请日：2014-01-15

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster

    IPC: H01L27/00 ,  H03K17/78 ,  H01J40/14 ,  H01L31/02 ,  H01L31/107 ,  H01L27/146

    CPC classification number: H01L31/02027 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/107

    Abstract: An imaging sensor system includes a single photon avalanche diode (SPAD) imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially an entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side is configured to be illuminated with photons through a back side and through the substantially entire thickness of the fully depleted first semiconductor layer. Deep n type isolation regions are disposed in the first semiconductor layer between the pixels to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer that is bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and coupled to count output pulses generated by a respective one of the pixels.

    Abstract translation: 成像传感器系统包括单个光子雪崩二极管（SPAD）成像阵列，其包括形成在第一晶片的第一半导体层中的N个像素。 基本上每个像素的第一半导体层的整个厚度被完全耗尽，使得包括在前侧附近的每个像素中的乘法区被配置为被光子照射通过背面，并且通过完全耗尽的第一 半导体层。 深度n型隔离区域设置在像素之间的第一半导体层中以隔离像素。 N个数字计数器形成在第二晶片的与第一晶片接合的第二半导体层中。 N个数字计数器中的每一个耦合到SPAD成像阵列并被耦合以对由相应的一个像素产生的输出脉冲进行计数。

    BACK SIDE ILLUMINATED IMAGE SENSOR WITH GUARD RING REGION REFLECTING STRUCTURE
    10.
    发明申请
    BACK SIDE ILLUMINATED IMAGE SENSOR WITH GUARD RING REGION REFLECTING STRUCTURE 有权
    背面照明图像传感器与保护环区域反射结构

    公开(公告)号：US20160099371A1

    公开(公告)日：2016-04-07

    申请号：US14506144

    申请日：2014-10-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster

    IPC: H01L31/107 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/378 ,  H01L31/02 ,  H01L31/0232

    CPC classification number: H01L31/1075 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/1465 ,  H01L31/02027 ,  H01L31/02327 ,  H04N5/332 ,  H04N5/369

    Abstract: A photon detector includes a single photon avalanche diode (SPAD) disposed proximate to a front side of a semiconductor layer. The SPAD includes a multiplication junction that is reversed biased above a breakdown voltage such that light directed into the SPAD through a backside of the semiconductor layer triggers an avalanche multiplication process. A guard ring is disposed in a guard ring region that surrounds the SPAD to isolate the SPAD in the semiconductor layer. A guard ring region reflecting structure is disposed in the guard ring region proximate to the guard ring and proximate to the front side of the semiconductor layer such that light directed into the guard ring region through the backside of the semiconductor layer that bypasses the SPAD is redirected by the guard ring region reflecting structure back into the semiconductor layer and into the SPAD.

    Abstract translation: 光子检测器包括靠近半导体层的前侧设置的单个光子雪崩二极管（SPAD）。 SPAD包括在击穿电压之上被反向偏置的乘法结，使得通过半导体层的背面引导到SPAD中的光触发雪崩倍增过程。 保护环设置在围绕SPAD的保护环区域中，以隔离半导体层中的SPAD。 保护环区域反射结构设置在保护环区域中靠近保护环并且靠近半导体层的前侧，使得通过绕过SPAD的半导体层的背面引导到保护环区域中的光被重定向 通过保护环区反射结构回到半导体层并进入SPAD。

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