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    Visible and infrared image sensor
    1.
    发明授权
    Visible and infrared image sensor 有权

    公开(公告)号：US10283553B2

    公开(公告)日：2019-05-07

    申请号：US15717071

    申请日：2017-09-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster ,  Howard E. Rhodes ,  Dominic Massetti

    IPC: H01L27/00 ,  H01L27/146 ,  H01L31/028

    Abstract: A method of image sensor fabrication includes forming a second semiconductor layer on a back side of a first semiconductor layer. The method also includes forming one or more groups of pixels disposed in a front side of the first semiconductor layer. The one or more groups of pixels include a first portion of pixels separated from the second semiconductor layer by a spacer region, and a second portion of pixels, where a first doped region of the second portion of pixels is in contact with the second semiconductor layer. Pinning wells are also formed and separate individual pixels in the one or more groups of pixels, and the pinning wells extend through the first semiconductor layer. Deep pinning wells are also formed and separate the one or more groups of pixels.

    Image sensor with enhanced quantum efficiency
    2.
    发明授权
    Image sensor with enhanced quantum efficiency 有权
    具有增强量子效率的图像传感器

    公开(公告)号：US09565405B2

    公开(公告)日：2017-02-07

    申请号：US14612961

    申请日：2015-02-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

    IPC: H04N9/04 ,  H01L27/146 ,  H04N5/3745

    CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

    Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

    Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在半导体材料的前侧上的第二掺杂区域和图像传感器电路之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

    PHOTOSENSITIVE CAPACITOR PIXEL FOR IMAGE SENSOR
    3.
    发明申请
    PHOTOSENSITIVE CAPACITOR PIXEL FOR IMAGE SENSOR 审中-公开
    用于图像传感器的感光电容像素

    公开(公告)号：US20170025468A1

    公开(公告)日：2017-01-26

    申请号：US15286392

    申请日：2016-10-05

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Wu-Zang Yang ,  Chia-Ying Liu ,  Chih-Wei Hsiung ,  Chun-Yung Ai ,  Dyson H. Tai ,  Dominic Massetti

    IPC: H01L27/146

    CPC classification number: H01L27/14692 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L28/55 ,  H01L28/56 ,  H01L28/90

    Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.

    Abstract translation: 制造像素阵列的方法包括沿着半导体衬底的前侧形成晶体管网络。 形成像素阵列中与晶体管网络内的晶体管电耦合的每个像素的接触元件。 在前侧形成互连层，以用覆盖接触元件的电介质来控制晶体管网络。 在互连层中形成空腔。 沿着空腔的空腔壁形成导电层，并且在腔内的导电层上形成电介质层。 感光半导体材料沉积在空腔内的电介质层上。 形成延伸到接触元件的电极腔。 电极腔至少部分地填充有导电材料以形成电极。 电极，导电层和感光半导体材料形成感光电容器。

    APPARATUS, METHOD AND SYSTEM FOR RANDOM NUMBER GENERATION
    5.
    发明申请
    APPARATUS, METHOD AND SYSTEM FOR RANDOM NUMBER GENERATION 有权
    随机数生成的装置，方法和系统

    公开(公告)号：US20140312918A1

    公开(公告)日：2014-10-23

    申请号：US13867979

    申请日：2013-04-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Dominic Massetti ,  Gang Chen

    IPC: G06F7/58 ,  G01R29/26

    CPC classification number: G06F7/582 ,  G01R29/26 ,  G06F7/588

    Abstract: Techniques and mechanisms for generating a random number. In an embodiment, a first signal is received from a first cell including a first source follower transistor. Circuit logic detects for a pulse of the first signal and, in response to the pulse, generates a signal indicating detection of a first random telegraph noise event in the first source follower transistor. In another embodiment, a first count update is performed in response to the indicated detection of the first random telegraph noise event. The first count update is one basis for generation of a number corresponding to a plurality of random telegraph noise events.

    Abstract translation: 用于生成随机数的技术和机制。 在一个实施例中，从包括第一源极跟随器晶体管的第一单元接收第一信号。 电路逻辑检测第一信号的脉冲，并且响应于脉冲，产生指示检测第一源极跟随器晶体管中的第一随机电报噪声事件的信号。 在另一实施例中，响应于所指示的第一随机电报噪声事件的检测，执行第一计数更新。 第一计数更新是生成与多个随机电报噪声事件相对应的数字的基础之一。

    THERMAL IMAGING SYSTEMS WITH VACUUM-SEALING LENS CAP AND ASSOCIATED WAFER-LEVEL MANUFACTURING METHODS
    9.
    发明申请
    THERMAL IMAGING SYSTEMS WITH VACUUM-SEALING LENS CAP AND ASSOCIATED WAFER-LEVEL MANUFACTURING METHODS 审中-公开
    具有真空密封透镜盖和相关的水平制造方法的热成像系统

    公开(公告)号：US20160011054A1

    公开(公告)日：2016-01-14

    申请号：US14329230

    申请日：2014-07-11

    Applicant: OmniVision Technologies, Inc.

    Inventor： Dominic Massetti

    IPC: G01J5/08 ,  G01J5/10 ,  H05K3/30 ,  H04N5/33

    CPC classification number: G01J5/0806 ,  G01J5/045 ,  G01J5/08 ,  G01J5/10 ,  G01J5/20 ,  G01J2005/0081 ,  G01J2005/106 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14649 ,  H04N5/33

    Abstract: A thermal imaging system with a vacuum-sealing lens cap, includes (a) a thermal image sensor having an array of temperature sensitive pixels for detecting thermal radiation, and (b) a lens sealed to the thermal image sensor for imaging thermal radiation from a scene onto the array of temperature sensitive pixels and sealing a vacuum around the temperature sensitive pixels. A wafer-level method for manufacturing a thermal imaging system with a vacuum-sealing lens cap includes sealing a lens wafer, having a plurality of lenses, to a sensor wafer having a plurality of thermal image sensors each having an array of temperature sensitive pixels, to seal, for each of the plurality of thermal image sensors, a vacuum around the temperature sensitive pixels.

    Abstract translation: 具有真空密封透镜盖的热成像系统包括（a）具有用于检测热辐射的温度敏感像素阵列的热图像传感器，以及（b）密封到热图像传感器的透镜，用于对来自 将场景放在温度敏感像素阵列上，并围绕温度敏感像素密封真空。 用于制造具有真空密封透镜盖的热成像系统的晶片级方法包括将具有多个透镜的透镜晶片密封到具有多个具有温度敏感像素阵列的多个热图像传感器的传感器晶片， 对于多个热图像传感器中的每一个，密封围绕温度敏感像素的真空。

    Image Sensor With Integrated Orientation Indicator
    10.
    发明申请
    Image Sensor With Integrated Orientation Indicator 审中-公开
    具有集成方向指示器的图像传感器

    公开(公告)号：US20140375784A1

    公开(公告)日：2014-12-25

    申请号：US13924350

    申请日：2013-06-21

    Applicant: OmniVision Technologies, Inc.

    Inventor： Dominic Massetti

    IPC: A61B1/05 ,  H04N5/232

    CPC classification number: A61B1/05 ,  A61B1/0008 ,  A61B5/067 ,  A61B2017/00278 ,  A61B2034/2048 ,  G02B23/2484 ,  H04N5/23229 ,  H04N2005/2255

    Abstract: An image sensor system for a medical procedure system includes a sensor array for generating image data for a scene and an orientation sensor directly mechanically connected to the image sensor. The orientation sensor generates an electrical signal indicative of orientation of the sensor array. A processor receives the image data and the electrical signal and generates an image of the scene, the image of the scene being altered to compensate for orientation of the sensor array.

    Abstract translation: 用于医疗程序系统的图像传感器系统包括用于生成用于场景的图像数据的传感器阵列和直接机械地连接到图像传感器的定向传感器。 方向传感器产生指示传感器阵列的取向的电信号。 处理器接收图像数据和电信号并产生场景的图像，改变场景的图像以补偿传感器阵列的取向。

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