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    IMAGE SENSORS WITH LED FLICKER MITIGATON GLOBAL SHUTTER PIXLES
    2.
    发明申请
    IMAGE SENSORS WITH LED FLICKER MITIGATON GLOBAL SHUTTER PIXLES 审中-公开

    公开(公告)号：US20170350755A1

    公开(公告)日：2017-12-07

    申请号：US15174708

    申请日：2016-06-06

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Tomas GEURTS

    IPC: G01J1/42 ,  G01J1/44

    CPC classification number: G01J1/4228 ,  G01J1/44 ,  H04N5/235 ,  H04N5/3559 ,  H04N5/3592 ,  H04N5/37452

    Abstract: An image sensor may include one or more pixels having a charge steering structure that may selectively route charge from a photodiode to increase the dynamic range of the pixel. The charge steering structure may be a coupled gate structure that routes overflow charge to a voltage supply and to one or more integrating storage structures during an exposure period. The charge steering structure may be two integrating storage structures directly connected to the photodiode that each integrate charge generated by the photodiode in an alternating fashion during an exposure period. Storage structures and transistors within the charge steering structure may receive control signals, which may be asserted in a mutually exclusive manner. Pixels may also include a dual-gain structure, which may provide additional charge storage capacity.

    IMAGE PIXELS HAVING PROCESSED SIGNAL STORAGE CAPABILITIES
    3.
    发明申请
    IMAGE PIXELS HAVING PROCESSED SIGNAL STORAGE CAPABILITIES 有权

    公开(公告)号：US20170332023A1

    公开(公告)日：2017-11-16

    申请号：US15151078

    申请日：2016-05-10

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Roger PANICACCI ,  Marko MLINAR

    IPC: H04N5/359 ,  H04N5/378 ,  H04N9/04

    CPC classification number: H04N5/3592 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/045 ,  H04N2209/045

    Abstract: An image sensor may include an array of image sensor pixels. Each image sensor pixel may have signal storage capabilities implemented through a write-back supply line and a control transistor for the supply line. Each image sensor pixel may output pixel values over column lines to switching circuitry. The switching circuitry may route the pixel values to signal processing circuitry. The signal processing circuitry may perform analog and/or digital processing operations utilizing analog circuits or pinned diode devices for image signal processing on the pixel values to output processed pixel values. The processing circuitry may send the processed pixel values back to the array. This allows the array to act as memory circuitry to support processing operations on processing circuitry in close proximity to the array. Configured this way, signal processing can be performed in close proximity to the array without having to move pixel signals to peripheral processing circuitry.

    ULTRA-HIGH DYNAMIC RANGE PIXEL ARCHITECTURE
    6.
    发明申请
    ULTRA-HIGH DYNAMIC RANGE PIXEL ARCHITECTURE 有权

    公开(公告)号：US20170241835A1

    公开(公告)日：2017-08-24

    申请号：US15050666

    申请日：2016-02-23

    Applicant: BAE Systems Imaging Solutions Inc.

    Inventor： Hung T. Do ,  Alberto M. Magnani ,  R. Daniel McGrath

    IPC: G01J1/42 ,  H01L27/146

    CPC classification number: G01J1/4228 ,  G01J1/46 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/35545 ,  H04N5/35563 ,  H04N5/3592 ,  H04N5/37457

    Abstract: A pixel comprises a high-response photodiode that collects photocharge, a first transfer gate that enables the charge to be transferred off the high-response photodiode, completely emptying it onto a low-response photodiode, a second transfer gate enables the charge to be transferred off the low-response photodiode, completely emptying it onto floating diffusion, a third transfer gate for anti-blooming; the floating diffusion collects the transferred charge creating a change of voltage, a means of resetting the floating diffusion. A source-follower is modulated by the voltage on floating diffusion to control bit-line voltage and column-amplifier output. In examples, photocharge is integrated onto both the high-response photodiode and onto the low-response photodiode. The column readout circuit consists of a column amplifier that uses capacitors to set the amplifier gain, three sampling capacitors used as analog memory and for correlated double sampling, and a comparator that assists in providing the final output.

    Image sensors and related methods and electronic devices
    7.
    发明授权
    Image sensors and related methods and electronic devices 有权

    公开(公告)号：US09743022B2

    公开(公告)日：2017-08-22

    申请号：US14851396

    申请日：2015-09-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Seok Oh ,  Seung-Sik Kim ,  Young-Chan Kim ,  Eun-Sub Shim ,  Dong-Joo Yang ,  Ji-Won Lee ,  Moo-Sup Lim

    IPC: H04N5/217 ,  H04N5/335 ,  H04N5/359

    CPC classification number: H04N5/3592

    Abstract: An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period.

    Controllable single pixel sensors
    8.
    发明授权
    Controllable single pixel sensors 有权
    可控单像素传感器

    公开(公告)号：US09549158B2

    公开(公告)日：2017-01-17

    申请号：US15010229

    申请日：2016-01-29

    Applicant: BRIGHTWAY VISION LTD.

    Inventor： Yoav Grauer ,  David Ofer ,  Eyal Levi

    IPC: H04N5/378 ,  H04N5/353 ,  H01L27/146 ,  H01L27/148 ,  H04N9/04 ,  H04N5/355 ,  H04N5/359 ,  H01L27/12 ,  H04N5/225 ,  H04N5/33

    CPC classification number: H04N9/045 ,  H01L27/1203 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14656 ,  H04N5/2256 ,  H04N5/332 ,  H04N5/353 ,  H04N5/35536 ,  H04N5/35572 ,  H04N5/3592 ,  H04N5/3594

    Abstract: A single pixel sensor is provided, comprising a photo sensor configured to convert light into proportional signals; a charge storage configured to accumulate, repeatedly, a plurality of the signals converted by the photosensor; a first transistor coupled between a pixel voltage terminal and the photosensor; a second transistor coupled between the photosensor and the charge storage; and a readout circuit coupled between the charge storage and an output channel, wherein: the single pixel sensor is configured to carry out the repeated accumulations of signals multiple times per each readout by the readout circuit, the single pixel sensor is configured to synchronously convert reflections of light emitted by an associated illuminator or to convert light emitted by non-associated flickering light sources, and wherein the single pixel sensor is backside illuminated by the light.

    Abstract translation: 提供单个像素传感器，包括被配置为将光转换成比例信号的光传感器; 电荷存储器，被配置为累积由光传感器转换的多个信号; 耦合在像素电压端子和光电传感器之间的第一晶体管; 耦合在光传感器和电荷存储器之间的第二晶体管; 以及耦合在所述电荷存储器和输出通道之间的读出电路，其中：所述单个像素传感器被配置为每次通过所述读出电路读出多次执行信号的重复累加，所述单个像素传感器被配置为同步地将反射 由相关的照明器发射的光或者转换由非相关联的闪烁光源发射的光，并且其中单个像素传感器被光背面照射。

    Solid imaging device including photoelectric conversion unit and TDI transfer unit
    9.
    发明授权
    Solid imaging device including photoelectric conversion unit and TDI transfer unit 有权
    固体成像装置包括光电转换单元和TDI转印单元

    公开(公告)号：US09491384B2

    公开(公告)日：2016-11-08

    申请号：US13258344

    申请日：2010-03-25

    Applicant: Hisanori Suzuki ,  Yasuhito Yoneta ,  Kentaro Maeta ,  Masaharu Muramatsu

    Inventor： Hisanori Suzuki ,  Yasuhito Yoneta ,  Kentaro Maeta ,  Masaharu Muramatsu

    IPC: H01L27/00 ,  H04N5/372 ,  H04N5/359 ,  H01L27/148 ,  H01L31/113

    CPC classification number: H04N5/37206 ,  H01L27/14831 ,  H01L27/14856 ,  H01L27/14887 ,  H01L31/113 ,  H04N5/3592

    Abstract: In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 161 to 165 are electrically connected to the OFG 5 at connecting parts 171 to 175. Therefore, when voltage values V1 to V5 applied to the connecting parts 171 to 175 by the voltage application units 161 to 165 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

    Abstract translation: 在固态成像装置1中，溢出门（OFG）5具有预定的电阻值，而施加电压单元161至165在连接部分171至175处与OFG5电连接。因此，当电压值V1 通过电压施加单元161〜165对应用于连接部171〜175的V5进行调整，OFG5可以分别在其较早和较晚的阶段部分产生较高和较低的电压值。 结果，在较早阶段和较后阶段部分中的势垒级（电位）变得越来越高，使得可以使在光电转换单元2的较早级侧区域中产生的所有电荷流出到溢出漏极 （OFD）4，由此只能在光电转换单元2的后级侧区域中产生的电荷被TDI转印。

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