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    Semiconductor apparatus having a reset transistor for resetting a potential in a semiconductor region
    2.
    发明授权
    Semiconductor apparatus having a reset transistor for resetting a potential in a semiconductor region 有权

    公开(公告)号：US10734422B2

    公开(公告)日：2020-08-04

    申请号：US16241251

    申请日：2019-01-07

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Tomoya Sasago ,  Kazuaki Tashiro

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/374

    Abstract: There is provided a semiconductor apparatus including a first semiconductor region of a first conductive type in which a potential to be detected appears, a second semiconductor region of a second conductive type forming a p-n junction with the first semiconductor region, an amplification transistor including a gate to which the first semiconductor region is connected, and a reset transistor configured to reset a potential of the first semiconductor region. In the semiconductor apparatus, one of a source and a drain of the reset transistor is connected to the first semiconductor region, and the other one of the source and the drain of the reset transistor is connected to the second semiconductor region.

    Photoelectric conversion device and imaging system
    4.
    发明授权
    Photoelectric conversion device and imaging system 有权
    光电转换装置及成像系统

    公开(公告)号：US09571768B2

    公开(公告)日：2017-02-14

    申请号：US14794653

    申请日：2015-07-08

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro ,  Noriyuki Kaifu ,  Hidekazu Takahashi

    IPC: H04N3/14 ,  H04N5/335 ,  H04N5/374 ,  H04N5/357 ,  H04N5/378 ,  H04N5/369 ,  H04N5/376 ,  H04N5/3745 ,  H04N5/355

    CPC classification number: H04N5/363 ,  H04N5/355 ,  H04N5/35572 ,  H04N5/3559 ,  H04N5/357 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/37455 ,  H04N5/3765 ,  H04N5/378

    Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion unit alternately performs an accumulation operation and a discharge operation in accordance with the voltage between the first electrode and the second electrode. In a period between two consecutive discharge operations among a plurality of discharge operations, a reset operation in which the reset transistor resets the voltage on the second electrode is performed a plurality of times.

    Abstract translation: 根据示例性实施例的光电转换装置包括包括光电转换单元，复位晶体管和输出来自光电转换单元的信号的放大器晶体管的像素。 光电转换单元包括第一电极，第二电极，光电转换层和设置在光电转换层和第二电极之间的绝缘层。 光电转换单元根据第一电极和第二电极之间的电压交替地执行累积操作和放电操作。 在多个放电操作中的两个连续放电操作之间的时段中，执行复位晶体管复位第二电极上的电压的复位操作多次。

    SOLID-STATE IMAGE SENSOR AND CAMERA
    5.
    发明申请
    SOLID-STATE IMAGE SENSOR AND CAMERA 有权
    固态图像传感器和摄像机

    公开(公告)号：US20140333814A1

    公开(公告)日：2014-11-13

    申请号：US14255109

    申请日：2014-04-17

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro

    IPC: H01L27/146 ,  H04N5/378

    CPC classification number: H01L27/14621 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14649 ,  H04N5/374 ,  H04N9/045

    Abstract: A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.

    Abstract translation: 固态图像传感器包括多个第一像素和多个第二像素。 多个第一像素中的每一个包括具有比红外光透射率高的可见光透射率的第一滤光器，以及被配置为接收透过第一滤光器的可见光的第一光电转换器，并且多个第二像素中的每一个包括第二 具有比可见光透射率高的红外光透射率的滤光器和被配置为接收透过第二滤光器的红外光的第二光电转换器。 多个第二像素被分成多个组，每组包括至少两个第二像素。 固态图像传感器包括合成器，被配置为从包括在每个组中的至少两个第二像素的信号合成信号。

    IMAGE PICKUP DEVICE
    6.
    发明申请
    IMAGE PICKUP DEVICE 有权

    公开(公告)号：US20130161701A1

    公开(公告)日：2013-06-27

    申请号：US13725336

    申请日：2012-12-21

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro ,  Shin Kikuchi

    IPC: H01L31/02

    CPC classification number: H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L29/66 ,  H01L31/02

    Abstract: An image pickup device according to the present invention is an image pickup device in which a plurality of pixel are arranged in a semiconductor substrate. Each of the plurality of pixels includes a photoelectric conversion element, a floating diffusion (FD) region, a transfer gate that transfers charges in the first semiconductor region to the FD region, and an amplification transistor whose gate is electrically connected to the FD region. The photoelectric conversion element has an outer edge which has a recessed portion in plan view, a source region and a drain region of the amplification transistor are located in the recessed portion, and the FD region is surrounded by the photoelectric conversion region or is located in the recessed portion in plan view.

    PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, AND MOBILE APPARATUS
    7.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, AND MOBILE APPARATUS 有权

    公开(公告)号：US20180249104A1

    公开(公告)日：2018-08-30

    申请号：US15892889

    申请日：2018-02-09

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Tomoya Sasago ,  Kazuaki Tashiro

    IPC: H04N5/355 ,  H01L27/146 ,  H04N5/3745 ,  G06T7/55

    Abstract: Provided is a photoelectric conversion device including: a pixel array including a plurality of pixels each including a first electrode, a second electrode, and a photoelectric conversion layer arranged between the first and second electrodes, in which the pixels include a first pixel having a first color filter and a second pixel having a second color filter different from the first color filter; a potential supply line that supplies an electric potential to the first electrodes of the first pixel and the second pixel; and control lines configured to supply different electric potentials to the second electrodes of the first pixel and the second pixel, respectively, to compensate a difference between a dependency of a sensitivity of the first pixel on a bias voltage applied to the photoelectric conversion layer and a dependency of a sensitivity of the second pixel on a bias voltage applied to the photoelectric conversion layer.

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