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公开(公告)号:US11412190B2
公开(公告)日:2022-08-09
申请号:US16983844
申请日:2020-08-03
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Chen-Wei Lu , Yin Qian , Eiichi Funatsu , Jin Li
Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.
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公开(公告)号:US20180226447A1
公开(公告)日:2018-08-09
申请号:US15945530
申请日:2018-04-04
Applicant: OmniVision Technologies, Inc.
Inventor: Chia-Chun Miao , Yin Qian , Chao-Hung Lin , Chen-Wei Lu , Dyson H. Tai , Ming Zhang , Jin Li
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/14618 , H01L27/14625 , H01L27/14685 , H01L27/14687
Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.
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公开(公告)号:US10015389B2
公开(公告)日:2018-07-03
申请号:US15273338
申请日:2016-09-22
Applicant: OmniVision Technologies, Inc.
Inventor: Chen-Wei Lu , Yin Qian , Dyson H. Tai
CPC classification number: H04N5/23212 , G02B3/0018 , G02B3/0056 , G02B5/20 , G02B7/34 , G02B7/36 , G03B13/36 , H04N5/2253 , H04N5/2254 , H04N5/232122 , H04N5/3696
Abstract: A PDAF imaging system includes an image sensor and an image data processing unit. The image sensor has an asymmetric-microlens PDAF detector that includes: (a) a plurality of pixels forming a sub-array having at least two rows and two columns, and (b) a microlens located above each of the plurality of pixels and being rotationally asymmetric about an axis perpendicular to the sub-array. The axis intersects a local extremum of a top surface of the microlens. The image data processing unit is capable of receiving electrical signals from each of the plurality of pixels and generating a PDAF signal from the received electrical signals. A method for forming a gull-wing microlens includes forming, on a substrate, a plate having a hole therein. The method also includes reflowing the plate.
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公开(公告)号:US09954020B1
公开(公告)日:2018-04-24
申请号:US15395963
申请日:2016-12-30
Applicant: OmniVision Technologies, Inc.
Inventor: Chen-Wei Lu , Dajiang Yang , Oray Orkun Cellek , Duli Mao
IPC: H01L27/146 , H04N9/04 , H04N5/355 , H04N5/369 , G02B5/20
CPC classification number: H01L27/14621 , G02B5/201 , G02B5/205 , H01L27/14607 , H01L27/14685 , H04N5/355 , H04N5/3696 , H04N9/045
Abstract: A high-dynamic-range color image sensor includes (a) a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, (b) a color filter layer disposed on the silicon substrate and including at least (i) a plurality of first color filters positioned above a first subset of each of the plurality of first pixels and the plurality of second pixels and configured to selectively transmit light of a first color and (ii) a plurality of second color filters positioned above a second subset of each of the plurality of first pixels and the plurality of second pixels and configured to selectively transmit light of a second color, and (c) a dynamic-range extending layer disposed on the color filter layer and including grey filters disposed above the second plurality of pixels to attenuate light propagating toward the second plurality of pixels.
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公开(公告)号:US09671537B2
公开(公告)日:2017-06-06
申请号:US14920126
申请日:2015-10-22
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Yin Qian , Chen-Wei Lu , Jin Li
CPC classification number: G02B5/208 , G02B5/201 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14649 , H04N5/2254 , H04N5/33 , H04N5/332 , H04N9/045
Abstract: Embodiments are described of a color filter array including a plurality of tiled minimal repeating units. Each minimal repeating unit includes an invisible-wavelength filter layer including a plurality of filters and a visible-wavelength filter layer positioned on the invisible-wavelength filter layer and having a plurality of filters such that each filter from the visible-wavelength layer is optically coupled to a corresponding filter in the invisible-wavelength layer.
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公开(公告)号:US20230395628A1
公开(公告)日:2023-12-07
申请号:US17832399
申请日:2022-06-03
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Chin Poh Pang , Wei Deng , Chen-Wei Lu , Da Meng , Guansong Liu , Yin Qian , Xiaodong Yang , Hongjun Li , Zhiqiang Lin , Chao Niu
IPC: H01L27/146
CPC classification number: H01L27/14627 , H01L27/14645
Abstract: Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.
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公开(公告)号:US10964744B1
公开(公告)日:2021-03-30
申请号:US16570920
申请日:2019-09-13
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Cheng Zhao , Chen-Wei Lu , Cunyu Yang , Ping-Hsu Chen , Zhiqiang Lin , Chengming Liu
IPC: G01J5/20 , H01L27/14 , H01L27/146
Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.
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公开(公告)号:US10609309B1
公开(公告)日:2020-03-31
申请号:US16106373
申请日:2018-08-21
Applicant: OmniVision Technologies, Inc.
Inventor: Tawei Ho , Chen-Wei Lu , Cheng-ming Liu
IPC: H04N5/33
Abstract: A pixel array comprise a green pixel comprising a first green optical filter and a first clear filter, a red pixel comprising a red optical filter and a first special filter, a blue pixel comprising a blue optical filter and a second special filter, and an IR pixel comprising an IR optical filter and one of a second green optical filter and a second clear filter, where the first special filter suppresses a transmission of IR at a stopband centered at 850 nm at a first IR minimum transmission, and the second special filter suppresses a transmission of IR at the stopband centered at 850 nm at a second IR minimum transmission, and where the first minimum IR transmission is different from the second minimum IR transmission.
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公开(公告)号:US10425597B2
公开(公告)日:2019-09-24
申请号:US15620757
申请日:2017-06-12
Applicant: OmniVision Technologies, Inc.
Inventor: Chen-Wei Lu , Ping-Hsu Chen , Yin Qian , Eiichi Funatsu
Abstract: An image sensor system, comprising a pixel array that includes at least a first type pixel and a second type pixel, wherein each first type pixel is configured to sense light of a first optical spectral range; and each second pixel is configured to sense light of a second optical spectral range; an optical filter located above the pixel array, said optical filter configured to pass a third optical spectral range and a fourth optical spectral range that is different from the third optical spectral range, wherein the fourth optical spectral range is less than the second optical spectral range; a light source that emits light in a fifth optical spectral range, wherein the fifth optical spectral range at least overlaps with the fourth optical spectral range; and a controller that controls the image sensor system to selectively operate in a first mode that uses said first optical spectral range, and a second mode that uses said second optical spectral range.
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公开(公告)号:US09966396B2
公开(公告)日:2018-05-08
申请号:US15239537
申请日:2016-08-17
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor: Yin Qian , Ming Zhang , Chen-Wei Lu , Jin Li , Chia-Chun Miao , Dyson H. Tai
IPC: H01L27/146
CPC classification number: H01L27/14607 , H01L27/1461 , H01L27/1462 , H01L27/14623 , H01L27/14643 , H01L27/14685 , H01L27/14689
Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.
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